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Toward Tunable Morphology and Improved Photostability in CsPbBr₃ Perovskite Single Microcrystals
Toward Tunable Morphology and Improved Photostability in CsPbBr₃ Perovskite Single Microcrystals
Khouloud Abiedh
,Zouhour Zaaboub
,Marco Salerno
,Fredj Hassen
Posted: 08 January 2026
Tuning Optical Absorption and Device Performance in P3HT:PCBM Organic Solar Cells Using Annealed Silver Thin Films
Alaa Y. Mahmoud
Posted: 22 December 2025
Sol-Gel Auto-Combustion Synthesis of Magnetic Nanomaterials as an Efficient Route for Advanced Functional Materials
Usama Nazir
Posted: 16 December 2025
Humidity Sensing in Extreme Environments: Mechanisms, Materials, Challenges, and Future Directions
Xiaoyuan Dong
,Dapeng Li
,Aobei Chen
,Dezhi Zheng
Posted: 09 December 2025
Fundamentals of Cubic Phase Synthesis in PbF2 – EuF3 System
Sofia Zykova
,Kristina I. Runina
,Mariya Mayakova
,Maria Berezina
,Olga Petrova
,Roman Avetisov
,Igor Avetissov
Posted: 09 December 2025
Epitaxial Growth of p-type β-Ga2O3 via Te and Mg Co-Doping Using Metal Organic Chemical Vapor Deposition
Chuang Zhang
,Hanzhao Song
,Chee Keong Tan
β-Gallium oxide (β-Ga2O3) offers considerable potential for next-generation power electronics due to its ultrawide bandgap (~4.9 eV) and established n-type conductivity. Nevertheless, realizing stable p-type doping remains a significant challenge, primarily due to the deep acceptor levels associated with conventional dopants. This article presents a co-doping strategy involving tellurium (Te) and magnesium (Mg), implemented via metal-organic chemical vapor deposition (MOCVD), aimed at addressing this challenge. Density-functional-theory (DFT) calculations suggest that Te incorporation could induce an intermediate band near the valence band maximum (VBM), potentially lowering the acceptor ionization barrier for Mg impurities. Initial experimental results indicate encouraging transport properties: the optimized Te-Mg co-doped thin film showed a room-temperature resistivity as low as 32.4 Ω·cm, with a measured Hall hole concentration of 1.78 × 1017 cm⁻3 and mobility of up to 5.29 cm2/V·s at lower carrier concentrations (5.72 × 1014 cm⁻3). Characterizations reveal evidence of VBM elevation via Te-Ga orbital hybridization and suggest a shift in the Fermi-level toward the valence band compatible with p-type behavior. While these preliminary findings show promise for enabling p-type Ga2O3 homoepitaxy, further research is necessary to optimize carrier concentrations below 1 Ω·cm, fully elucidate the Te-Mg doping dynamics, and provide more comprehensive device-level validation. This work introduces a pathway worthy of further exploration for achieving p-type conductivity in this critical semiconductor.
β-Gallium oxide (β-Ga2O3) offers considerable potential for next-generation power electronics due to its ultrawide bandgap (~4.9 eV) and established n-type conductivity. Nevertheless, realizing stable p-type doping remains a significant challenge, primarily due to the deep acceptor levels associated with conventional dopants. This article presents a co-doping strategy involving tellurium (Te) and magnesium (Mg), implemented via metal-organic chemical vapor deposition (MOCVD), aimed at addressing this challenge. Density-functional-theory (DFT) calculations suggest that Te incorporation could induce an intermediate band near the valence band maximum (VBM), potentially lowering the acceptor ionization barrier for Mg impurities. Initial experimental results indicate encouraging transport properties: the optimized Te-Mg co-doped thin film showed a room-temperature resistivity as low as 32.4 Ω·cm, with a measured Hall hole concentration of 1.78 × 1017 cm⁻3 and mobility of up to 5.29 cm2/V·s at lower carrier concentrations (5.72 × 1014 cm⁻3). Characterizations reveal evidence of VBM elevation via Te-Ga orbital hybridization and suggest a shift in the Fermi-level toward the valence band compatible with p-type behavior. While these preliminary findings show promise for enabling p-type Ga2O3 homoepitaxy, further research is necessary to optimize carrier concentrations below 1 Ω·cm, fully elucidate the Te-Mg doping dynamics, and provide more comprehensive device-level validation. This work introduces a pathway worthy of further exploration for achieving p-type conductivity in this critical semiconductor.
Posted: 09 December 2025
An Appraisal of the Understanding Pressure Effects on Structural, Optical, and Magnetic Properties of CsMnF4 and Other 3dn Compounds
Fernando Rodríguez
A recent theoretical study of CsMnF4 under pressure [Inorg. Chem. 2024, 63(29), 13231] presents conclusions on its structural, optical, and magnetic behavior that conflict with established experimental evidence. Crucially, this work omits key prior experimental results on CsMnF4 and related Mn3+ fluorides under pressure. This perspective examines the resulting discrepancies, arguing that the omissions of this data undermines the theoretical estimates and methodological validity of Ref. [1]. This paper provides a critical overview centered on two main points: the contested nature of the pressure-induced high-spin to low-spin transition observed in CsMnF4 at ~37 GPa and a detailed discussion of Jahn-Teller physics in this archetypal system. By reconciling the existing literature with the new theoretical claims, this work aims to clarify the high-pressure behavior of CsMnF4.
A recent theoretical study of CsMnF4 under pressure [Inorg. Chem. 2024, 63(29), 13231] presents conclusions on its structural, optical, and magnetic behavior that conflict with established experimental evidence. Crucially, this work omits key prior experimental results on CsMnF4 and related Mn3+ fluorides under pressure. This perspective examines the resulting discrepancies, arguing that the omissions of this data undermines the theoretical estimates and methodological validity of Ref. [1]. This paper provides a critical overview centered on two main points: the contested nature of the pressure-induced high-spin to low-spin transition observed in CsMnF4 at ~37 GPa and a detailed discussion of Jahn-Teller physics in this archetypal system. By reconciling the existing literature with the new theoretical claims, this work aims to clarify the high-pressure behavior of CsMnF4.
Posted: 28 November 2025
Study on Electrical Transport Properties of BGaN Layers
Andrzej Molenda
,Wojciech Jasłowski
,Beata Stanczyk
,Krzysztof Czuba
,Marek Guziewicz
Posted: 24 November 2025
Closing the Loop: Sustainable and Cost-Effective Glucose Biosensors Through Circular and Digital Design
Anna-Marie Stobo
,Daniel Izquierdo-Bote
,Lou Bernard
,Karl Hampton
,Natalia Wolfe
,Abigail Parker
,María Begoña González García
,Ignacio Zurano Villasuso
,Bradley Stockill
,Rafail O. Ioannidis
+8 authors
Posted: 18 November 2025
Borophene-Based Nanomaterials for Energy and Biomedical Applications: Progress, Challenges, and Outlook
Yao Du
,Xin Qu
Posted: 04 November 2025
Exploration of Structural, Thermodynamic, Magnetic and Mechanical Properties of Martensite Fe3Pt Alloys: A Density Functional Theory Study
N. L. Lethole
,E. H. Onah
Posted: 29 October 2025
The Effect of Co/TiN Interfaces on the Co Interconnect Resistivity
Poyen Shen
,Sanzida Rahman
,Daniel Syracuse
,Daniel Gall
Electron transport measurements on Co/TiN multilayers are employed to explore the effect of TiN layers on the Co resistivity. 50-nm-thick multilayer stacks containing N = 1-10 individual Co layers that are separated by 1-nm-thick TiN layers are sputter deposited on SiO2/Si(001) substrates at 400 °C. X-ray diffraction and reflectivity measurements indicate a tendency for a 0001 preferred orientation, an x-ray coherence length of 13 nm that is nearly independent of N, and an interfacial roughness that increases with N. The in-plane multilayer resistivity ρ increases with increasing N = 1-10, from ρ = 14.4 to 36.6 µΩ-cm at room temperature and from ρ = 11.2 to 19.4 µΩ-cm at 77 K. This increase is due to a combination of increased electron scattering at interfaces and grain boundaries, as quantified using a combined Fuchs-Sondheimer and Mayadas-Shatzkes model. The analysis indicates that a decreasing thickness of the individual Co layers dCo from 50 to 5 nm causes not only an increasing resistivity contribution from Co/TiN interface scattering (from 9 to 88% with respect to the room temperature bulk resistivity), but also an increasing (39 to 154%) grain boundary scattering contribution which exacerbates the resistivity penalty due to the TiN liner. These results are supported by Co/TiN bilayer and trilayer structures deposited on Al2O3 (0001) at 600 °C. Interfacial intermixing causes Co2Ti and Co3Ti alloy phase formation, an increase in the contact resistance, a degradation of the Co crystalline quality, and a 2.3× higher resistivity for Co deposited on TiN than Co directly deposited on Al2O3(0001). The overall results show that TiN liners cause a dramatic increase in Co interconnects due to diffuse surface scattering, interfacial intermixing/roughness, and Co grain renucleation at Co/TiN interfaces.
Electron transport measurements on Co/TiN multilayers are employed to explore the effect of TiN layers on the Co resistivity. 50-nm-thick multilayer stacks containing N = 1-10 individual Co layers that are separated by 1-nm-thick TiN layers are sputter deposited on SiO2/Si(001) substrates at 400 °C. X-ray diffraction and reflectivity measurements indicate a tendency for a 0001 preferred orientation, an x-ray coherence length of 13 nm that is nearly independent of N, and an interfacial roughness that increases with N. The in-plane multilayer resistivity ρ increases with increasing N = 1-10, from ρ = 14.4 to 36.6 µΩ-cm at room temperature and from ρ = 11.2 to 19.4 µΩ-cm at 77 K. This increase is due to a combination of increased electron scattering at interfaces and grain boundaries, as quantified using a combined Fuchs-Sondheimer and Mayadas-Shatzkes model. The analysis indicates that a decreasing thickness of the individual Co layers dCo from 50 to 5 nm causes not only an increasing resistivity contribution from Co/TiN interface scattering (from 9 to 88% with respect to the room temperature bulk resistivity), but also an increasing (39 to 154%) grain boundary scattering contribution which exacerbates the resistivity penalty due to the TiN liner. These results are supported by Co/TiN bilayer and trilayer structures deposited on Al2O3 (0001) at 600 °C. Interfacial intermixing causes Co2Ti and Co3Ti alloy phase formation, an increase in the contact resistance, a degradation of the Co crystalline quality, and a 2.3× higher resistivity for Co deposited on TiN than Co directly deposited on Al2O3(0001). The overall results show that TiN liners cause a dramatic increase in Co interconnects due to diffuse surface scattering, interfacial intermixing/roughness, and Co grain renucleation at Co/TiN interfaces.
Posted: 21 October 2025
The Role of Time in the Structural Ordering of Poly-3-Hexylthiophene
Ikemefuna Uba
,Wisdom Jagoi
,Brenden Forrest
,Abdul-Majeed Hamidu
,Kenneth Granderson
,Emmanuel Baskerville
,Lailah Outsey
,Robert Birdow
,Kamar Mann
,Justice Ash
Posted: 23 September 2025
Synthesis of Molecularly Imprinted Fluorescent Sensor Based on Biomass Derived Carbon Dots from Tomato Stalks for Detection of Tetracycline
Xuejing Wang
,Jing Wang
,Guanya Ji
,Yihua Zhu
,Jun Shi
,Mengge Zhang
,Chengshun Tang
,Hongwei Duan
,Xiuxiu Dong
,Oluwafunmilola Ola
+2 authors
Posted: 04 September 2025
Formation and Study of Bismuth Sulphide Thin Films on Textiles of Different Compositions as Photovoltaic Components
Veja Sruogaite
,Valentina Krylova
Posted: 20 August 2025
Mixed Polaron and Bipolaron Transport in (xV2O5 – (65-x) Sb2O3 – 35P2O5) Glasses
Manar Alenezi
,Amrit Prasad Kafle
,Meznh Alsubaie
,Ian L. Pegg
,Najwa Albalawi
,Biprodas Dutta
Posted: 23 July 2025
Magnetic Field Suppression of the Martensitic Transformation in Mn‐Based MnNi(Fe)Sn Metamagnetic Shape Memory Heusler Alloys
Patricia Lázpita
,Natalia Ahiova Río-López
,David Mérida
,Emily Leonie Quinlyn Nowalaja Ammerlaan
,Uli Zeitler
,Volodymyr Chernenko
,Jon Gutiérrez
Posted: 17 July 2025
Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe₂ and Rotationally Aligned h-BN Monolayer
Qiaoxuan Zhang
,Cong Wang
,Wenjie Wang
,Rong Sun
,Rongjie Zheng
,Qingchang Ji
,Hongwei Yan
,Zhengbo Wang
,Xin He
,Hongyan Wang
+5 authors
Posted: 16 July 2025
Properties of ZnO Prepared by Polymeric Citrate Amorphous Precursor Method: An Influence of Cobalt Concentration
Jailes J. Beltrán
,Luis A. Flórez
,Luis C. Sánchez
Posted: 09 July 2025
Signal Enhancement in Magnetoelastic Ribbons through Thermal Annealing: Evaluation of Magnetic Signal Output in Different Metglas Materials
Georgios Samourgkanidis
,Dimitris Kouzoudis
,Panagiotis Charalampous
,Eyad Adnan
Posted: 20 May 2025
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