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An Appraisal of the Understanding Pressure Effects on Structural, Optical, and Magnetic Properties of CsMnF4 and Other 3dn Compounds
Fernando Rodríguez
A recent theoretical study of CsMnF4 under pressure [Inorg. Chem. 2024, 63(29), 13231] presents conclusions on its structural, optical, and magnetic behavior that conflict with established experimental evidence. Crucially, this work omits key prior experimental results on CsMnF4 and related Mn3+ fluorides under pressure. This perspective examines the resulting discrepancies, arguing that the omissions of this data undermines the theoretical estimates and methodological validity of Ref. [1]. This paper provides a critical overview centered on two main points: the contested nature of the pressure-induced high-spin to low-spin transition observed in CsMnF4 at ~37 GPa and a detailed discussion of Jahn-Teller physics in this archetypal system. By reconciling the existing literature with the new theoretical claims, this work aims to clarify the high-pressure behavior of CsMnF4.
A recent theoretical study of CsMnF4 under pressure [Inorg. Chem. 2024, 63(29), 13231] presents conclusions on its structural, optical, and magnetic behavior that conflict with established experimental evidence. Crucially, this work omits key prior experimental results on CsMnF4 and related Mn3+ fluorides under pressure. This perspective examines the resulting discrepancies, arguing that the omissions of this data undermines the theoretical estimates and methodological validity of Ref. [1]. This paper provides a critical overview centered on two main points: the contested nature of the pressure-induced high-spin to low-spin transition observed in CsMnF4 at ~37 GPa and a detailed discussion of Jahn-Teller physics in this archetypal system. By reconciling the existing literature with the new theoretical claims, this work aims to clarify the high-pressure behavior of CsMnF4.
Posted: 28 November 2025
Study on Electrical Transport Properties of BGaN Layers
Andrzej Molenda
,Wojciech Jasłowski
,Beata Stanczyk
,Krzysztof Czuba
,Marek Guziewicz
Posted: 24 November 2025
Closing the Loop: Sustainable and Cost-Effective Glucose Biosensors Through Circular and Digital Design
Anna-Marie Stobo
,Daniel Izquierdo-Bote
,Lou Bernard
,Karl Hampton
,Natalia Wolfe
,Abigail Parker
,María Begoña González García
,Ignacio Zurano Villasuso
,Bradley Stockill
,Rafail O. Ioannidis
+8 authors
Posted: 18 November 2025
Borophene-Based Nanomaterials for Energy and Biomedical Applications: Progress, Challenges, and Outlook
Yao Du
,Xin Qu
Posted: 04 November 2025
Exploration of Structural, Thermodynamic, Magnetic and Mechanical Properties of Martensite Fe3Pt Alloys: A Density Functional Theory Study
N. L. Lethole
,E. H. Onah
Posted: 29 October 2025
The Effect of Co/TiN Interfaces on the Co Interconnect Resistivity
Poyen Shen
,Sanzida Rahman
,Daniel Syracuse
,Daniel Gall
Electron transport measurements on Co/TiN multilayers are employed to explore the effect of TiN layers on the Co resistivity. 50-nm-thick multilayer stacks containing N = 1-10 individual Co layers that are separated by 1-nm-thick TiN layers are sputter deposited on SiO2/Si(001) substrates at 400 °C. X-ray diffraction and reflectivity measurements indicate a tendency for a 0001 preferred orientation, an x-ray coherence length of 13 nm that is nearly independent of N, and an interfacial roughness that increases with N. The in-plane multilayer resistivity ρ increases with increasing N = 1-10, from ρ = 14.4 to 36.6 µΩ-cm at room temperature and from ρ = 11.2 to 19.4 µΩ-cm at 77 K. This increase is due to a combination of increased electron scattering at interfaces and grain boundaries, as quantified using a combined Fuchs-Sondheimer and Mayadas-Shatzkes model. The analysis indicates that a decreasing thickness of the individual Co layers dCo from 50 to 5 nm causes not only an increasing resistivity contribution from Co/TiN interface scattering (from 9 to 88% with respect to the room temperature bulk resistivity), but also an increasing (39 to 154%) grain boundary scattering contribution which exacerbates the resistivity penalty due to the TiN liner. These results are supported by Co/TiN bilayer and trilayer structures deposited on Al2O3 (0001) at 600 °C. Interfacial intermixing causes Co2Ti and Co3Ti alloy phase formation, an increase in the contact resistance, a degradation of the Co crystalline quality, and a 2.3× higher resistivity for Co deposited on TiN than Co directly deposited on Al2O3(0001). The overall results show that TiN liners cause a dramatic increase in Co interconnects due to diffuse surface scattering, interfacial intermixing/roughness, and Co grain renucleation at Co/TiN interfaces.
Electron transport measurements on Co/TiN multilayers are employed to explore the effect of TiN layers on the Co resistivity. 50-nm-thick multilayer stacks containing N = 1-10 individual Co layers that are separated by 1-nm-thick TiN layers are sputter deposited on SiO2/Si(001) substrates at 400 °C. X-ray diffraction and reflectivity measurements indicate a tendency for a 0001 preferred orientation, an x-ray coherence length of 13 nm that is nearly independent of N, and an interfacial roughness that increases with N. The in-plane multilayer resistivity ρ increases with increasing N = 1-10, from ρ = 14.4 to 36.6 µΩ-cm at room temperature and from ρ = 11.2 to 19.4 µΩ-cm at 77 K. This increase is due to a combination of increased electron scattering at interfaces and grain boundaries, as quantified using a combined Fuchs-Sondheimer and Mayadas-Shatzkes model. The analysis indicates that a decreasing thickness of the individual Co layers dCo from 50 to 5 nm causes not only an increasing resistivity contribution from Co/TiN interface scattering (from 9 to 88% with respect to the room temperature bulk resistivity), but also an increasing (39 to 154%) grain boundary scattering contribution which exacerbates the resistivity penalty due to the TiN liner. These results are supported by Co/TiN bilayer and trilayer structures deposited on Al2O3 (0001) at 600 °C. Interfacial intermixing causes Co2Ti and Co3Ti alloy phase formation, an increase in the contact resistance, a degradation of the Co crystalline quality, and a 2.3× higher resistivity for Co deposited on TiN than Co directly deposited on Al2O3(0001). The overall results show that TiN liners cause a dramatic increase in Co interconnects due to diffuse surface scattering, interfacial intermixing/roughness, and Co grain renucleation at Co/TiN interfaces.
Posted: 21 October 2025
The Role of Time in the Structural Ordering of Poly-3-Hexylthiophene
Ikemefuna Uba
,Wisdom Jagoi
,Brenden Forrest
,Abdul-Majeed Hamidu
,Kenneth Granderson
,Emmanuel Baskerville
,Lailah Outsey
,Robert Birdow
,Kamar Mann
,Justice Ash
Posted: 23 September 2025
Synthesis of Molecularly Imprinted Fluorescent Sensor Based on Biomass Derived Carbon Dots from Tomato Stalks for Detection of Tetracycline
Xuejing Wang
,Jing Wang
,Guanya Ji
,Yihua Zhu
,Jun Shi
,Mengge Zhang
,Chengshun Tang
,Hongwei Duan
,Xiuxiu Dong
,Oluwafunmilola Ola
+2 authors
Posted: 04 September 2025
Formation and Study of Bismuth Sulphide Thin Films on Textiles of Different Compositions as Photovoltaic Components
Veja Sruogaite
,Valentina Krylova
Posted: 20 August 2025
Mixed Polaron and Bipolaron Transport in (xV2O5 – (65-x) Sb2O3 – 35P2O5) Glasses
Manar Alenezi
,Amrit Prasad Kafle
,Meznh Alsubaie
,Ian L. Pegg
,Najwa Albalawi
,Biprodas Dutta
Posted: 23 July 2025
Magnetic Field Suppression of the Martensitic Transformation in Mn‐Based MnNi(Fe)Sn Metamagnetic Shape Memory Heusler Alloys
Patricia Lázpita
,Natalia Ahiova Río-López
,David Mérida
,Emily Leonie Quinlyn Nowalaja Ammerlaan
,Uli Zeitler
,Volodymyr Chernenko
,Jon Gutiérrez
Posted: 17 July 2025
Van der Waals Magnetic Tunnel Junctions Based on Two-Dimensional 1T-VSe₂ and Rotationally Aligned h-BN Monolayer
Qiaoxuan Zhang
,Cong Wang
,Wenjie Wang
,Rong Sun
,Rongjie Zheng
,Qingchang Ji
,Hongwei Yan
,Zhengbo Wang
,Xin He
,Hongyan Wang
+5 authors
Posted: 16 July 2025
Properties of ZnO Prepared by Polymeric Citrate Amorphous Precursor Method: An Influence of Cobalt Concentration
Jailes J. Beltrán
,Luis A. Flórez
,Luis C. Sánchez
Posted: 09 July 2025
Signal Enhancement in Magnetoelastic Ribbons through Thermal Annealing: Evaluation of Magnetic Signal Output in Different Metglas Materials
Georgios Samourgkanidis
,Dimitris Kouzoudis
,Panagiotis Charalampous
,Eyad Adnan
Posted: 20 May 2025
Magnetoelectric Effects in Bilayers of PZT and Co and Ti Substituted M-Type Hexagonal Ferrites
Sujoy Saha
,Sabita Acharya
,Sidharth Menon
,Rao Bidthanapally
,Michael R. Page
,Menka Jain
,Gopalan Srinivasan
Posted: 16 May 2025
SCAPS-1D Simulation of Various Hole Transport Layers' Impact on CsPbI₂Br Perovskite Solar Cells Under Indoor Low-Light Conditions
Chih-Hsi Peng
,Yi-Cheng Lin
Posted: 13 May 2025
Photosensitization of TiO2 with Copper for the Photodegradation of Organic Pollutants in Water
Dafne Rubi Porras-Herrera
,Debany Yulissa Rincón-Salazar
,María Teresa Maldonado-Sada
,José Adalberto Castillo-Robles
,Carlos Adrián Calles-Arriaga
,Enrique Rocha-Rangel
Posted: 12 May 2025
DFT Study of Hydrostatic Pressure Effects up to 1.0 GPa on the Electronic and Magnetic Properties of Laves Phases ErAl₂ and ErNi2
T. López-Solenzal
,J.L. Sanchez Llamazares
,J.L. Enríquez-Carrejo
,C.F. Sánchez-Valdés
Posted: 12 May 2025
Design and Energy Spectrum Performance Optimization of a Portable Gamma Detector Based on Perovskite Materials
Yuanxiang Feng
Posted: 12 May 2025
Probing Phase Transitions and Interfacial Reorganization in Tapc/Cbp/BPhen OLED Stacks by In Situ Ellipsometry
Ilze Aulika
,Patricija Paulsone
,Sven Oras
,Jelena Butikova
,Margarita Anna Zommere
,Elina Laizane
,Aivars Vembris
Posted: 15 April 2025
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