Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for Terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device’s performance. The initial stage, executed in MATLAB, delves into charge transport dynamics within a FET under asymmetric boundary conditions, employing hydrodynamic equations for electron transport in the graphene channel. Electromagnetic field interactions are modeled via Finite-Difference Time-Domain (FDTD) techniques. The second stage, conducted in COMSOL Multiphysics, focuses on the microstrip patch antenna’s radiative characteristics. Notably, analysis of the S11 curve reveals minimal reflections at the FET’s resonant frequency of 1.34672 THz, indicating efficient impedance matching. Examination of the radiation pattern demonstrates the antenna’s favorable directional properties. This research underscores the potential of graphene-based FETs for Terahertz applications, offering tunable impedance matching and high radiation efficiency for future Terahertz devices.

Organic electrochemical transistors (OECTs) based on conducting polymers have attracted significant attention in the field of biosensors. PEDOT:PSS and polyaniline (PANI) are representative conducting polymers used for OECTs. While there are many studies on PEDOT:PSS, there are not so many reports on PANI-based OECTs, and a detailed study to compare these two polymers has been desired. In this study, we investigated the fabrication conditions to produce the best performance in the OECTs using the above-mentioned two types of conducting polymers. Two main parameters were film thickness and film surface roughness. For PEDOT:PSS, the optimal conditions for fabricating thin films were a spin-coating rate of 3000 rpm and DI water immersion time of 18 hours. For PANI, the optimal conditions were a spin-coating rate of 3000 rpm and DI water immersion time of 5 seconds, and adding dodecylbenzenesulfonic acid (DBSA) was found to provide better OECT performances. The OECT performances based on PEDOT:PSS were superior to those based on PANI in terms of conductivity and transconductance, but PANI showed excellence in terms of film thickness and surface smoothness, leading to the good reproducibility of OECT performances.

The article shows that active RC- and RLC- filters based on the simplest wideband SiGe transistor stages are quite promising for RF and microwave frequency ranges. The results of computer simulation of the RC- and RLC-filters proposed by the authors of this article, which are oriented for use in communication and telecommunications devices, incl. with tunable and adaptive parameters.

Recently L-shaped tunneling field-effect-transistor (LTFET) has been introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, shortcoming of LTFET was investigated. It was found that corner effect present in LTFET effectively degrades its subthreshold slope. To get rid of corner effect a new type of device with dual material gates is presented. The new device termed as DG-LTFET gets rid of the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over LTFET. In this work DG-LTFET was evaluated for different device parameters, and bench-marked against LTFET. This work presents an optimum configuration of DG-LTFET in terms of device dimensions and doping levels, to get the best subthreshold, ON current and ambipolar performance from the DG-LTFET.

Detection of virus in sample is an actual problem in biotechnology, virology, medicine using biosensor. History of problem dates back to middle of last century and is associated with development of an ion-sensitive solid-state device for neurophysiological measurements. Aim of work is theoretical investigation process of detection antibody+antigen (AB+AG) complexes using SOI-FET biosensor. On example of crystal with ten biosensors, estimates of probability detection AB+AG complexes influenza virus are made. In detection process, following four results are possible: – target complex is present in test sample, and it was correctly detected; – target complex is present in sample, but it was not detected; – target complex is absent in sample, but background particles are mistakenly detected as target complex; – target complex is absent in sample, background particles present in sample and are correctly detected as noise.

We report the electrical characterization and the field emission properties of CVD-grown MoS₂ bilayers deposited on SiO₂/Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS₂ and we report normally-on field effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~200 V/μm is able to extract current from the flat part of MoS₂ bilayers, which therefore can be conveniently exploited for field emission applications even in low field-enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in 2D materials, fully describes the emission process.

The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements.

We utilized laser irradiation as a potential technique in tuning the electrical performance of NiOx/SiO2 thin film transistors (TFTs). By optimizing the laser fluence and the number of laser pulses, the TFT performance is evaluated in terms of mobility, threshold voltage, on/off current ratio and subthreshold swing, all of which were derived from the transfer and output characteristics. The 500 laser pulses irradiated NiOx/SiO2 TFT exhibited an enhanced mobility of 3 cm2/V-s from a value of 1.25 cm2/V-s for as-deposited NiOx/SiO2 TFT. The laser-irradiated NiOx material likely has a significant concentration of defect gap states, which could also be involved in light absorption processes. Second, and more importantly, the excess energy that the photogenerated charge carriers possess (due to the significant difference between the photon energy and the bandgap of NiOx), combined with the very high light intensity, would result in complex thermal and photo thermal changes thus resulting in an enhanced electrical performance of p-type NiOx/SiO2 TFT structure.

In recent years graphene has attracted much interest due to its unique properties of flexibility, strong light-matter interaction, high carrier mobility and broadband absorption. In addition, graphene can be deposited on many substrates including silicon with which is able to form Schottky junctions opening the path to the realization of near-infrared silicon photodetectors based on the internal photoemission effect where graphene play the role of the metal. In this work, we review the very recent progress of the near-infrared photodetectors based on Schottky junctions involving graphene. This new family of device promises to overcome the limitations of the Schottky photodetectors based on metals showing the potentialities to compare favorably with germanium photodetectors currently employed in silicon photonics.

This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the parameters of conventional Cauer-type are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by adaptive Cauer-type thermal network model is more accurate than that of the conventional model.

Logic gates made of pairs of NPN and PNP bipolar transistors, similar to CMOS logic gates, have been proposed and patented long ago but did not find any practical application until now. Other bipolar technologies (TTL, TTL-S, ECL), once the technologies of choice for digital systems, were abandoned and superseded by CMOS. In this paper it is shown that now, when truly com-plementary pairs of bipolar transistors can be made, properly biased bipolar gates similar to CMOS gates are feasible, can be thermally stable and find practical applications.

This study introduces a low-cost solution provided by a specialized source measure unit (SMU), offering an alternative to conventional source meter units. Through precise IV curve measurements for graphene-channel FETs, the SMU demonstrates its capability in accurately characterizing these devices with minimal noise and high accuracy. This cost-effective solution presents a promising avenue for researchers and developers seeking reliable tools for sensor development and characterization, providing valuable insights into the behavior of graphene-channel FETs and the effect of surface illumination without the need for expensive equipment. Additionally, the SMU was validated with known passive and active components, along with probe station integration for microscale connection, ensuring its effectiveness in capturing accurate measurements. The SMU’s focus on collecting IV curves, coupled with its ability to identify device defects, such as Schottky junctions, contributes to its utility in quality testing for semiconductor devices. Its low-cost nature makes it accessible for various research endeavors, enabling efficient data collection and analysis for graphene-based sensor applications.

Carbon nanotubes have been attracting considerable interest among material scientists, physicists, chemists and engineers for almost 30 years. Owing to their high aspect ratio, coupled with remarkable mechanical, electronic and thermal properties, carbon nanotubes have found application in diverse fields. In this review, we will cover the work on carbon nanotubes used for sensing applications. In particular, we will see examples where carbon nanotubes act as main players in devices sensing biomolecules, gas, light or pressure changes. Furthermore, we will discuss how to improve the performance of carbon nanotube-based sensors after proper modification.

Micro-Raman spectroscopy was carried out to evaluate the localized residual stresses in commercial Gallium Nitride-based devices, specifically AlGaN/GaN High Electron Mobility Transistors (HEMTs) in a novel packaging design provided by STMicroelectronics S.r.l. The packaging plays a key role in protecting the device core against the external environment, thus minimizing damages caused by mechanical shocks, exposure to light, and contact with chemicals, conjointly achieving an efficient heat dissipation rate. Even though the packaging is a required step for the proper functioning of ready-to-use electronic devices, its application typically may introduce mechanical stress to AlGaN/GaN HEMTs, which can result in various reliability issues. In this paper, we investigate the impact of packaging on residual stress by analyzing the frequency shift of the E2 Raman peak along GaN layers and at the GaN/Si interface. An extensive evaluation was conducted using both a packaged device and a wafer-level device. The correlation between Raman frequency shifts of the E2 mode was accurately quantified, revealing a stress mitigation of approximately 0.1 GPa. This reduction is ascribed to the compressive stress introduced by the packaging, which partially offsets the intrinsic tensile stress of the wafer-level device. The proposed methodology could, in principle, be implemented to improve the development of a packaging.

We propose a deep learning algorithm that directly compensates for luminance degradation owing to the deterioration of organic light emitting diode (OLED) devices to address the burn-in phenomenon of OLED displays. Conventional compensation circuits are encumbered by a high cost of development and manufacturing processes owing to their complexity. However, given that deep learning algorithms are typically mounted on a system on chip (SoC), the complexity of the circuit design is reduced, and the circuit can be reused by re-learning only the changed characteristics of the new pixel device. The proposed approach comprises deep feature generation and multi-stream self-attention, which decipher the importance of the variables, and the correlation between burn-in-related variables. It also utilizes a deep neural network that identifies the nonlinear relationship between the extracted features and luminance degradation. Thereafter, the luminance degradation is estimated from the burn-in-related variables, and the burn-in phenomenon can be addressed by compensating for the luminance degradation. The experimental results revealed that compensation was successfully achieved within an error range of 4.56%, and demonstrate the potential of a new approach that can mitigate the burn-in phenomenon by directly compensating for pixel-level luminance deviation.

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μ_FE = 15.0 cm²·V^-1·s^-1, SS = 0.5 V/dec, V_TH = 1.5 V, I_ON/I_OFF = 1.1×10⁸) and stability (V_TH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.

In this study, the degradation characteristics of radio-frequency (RF) low-noise amplifier (LNA) based on silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) due to total ionizing dose (TID) are investigated. The small-signal equivalent model of a SiGe HBT is utilized to analyze circuit-level performance including the input and the output matching and noise figure (NF). As a target circuit, an LNA with a cascode common-emitter stage with emitter degeneration is studied and the equation of each performance parameter is derived. The RF LNA fabricated using commercial 350 nm SiGe technology was exposed to X-ray irradiation with the total dose up to 3 Mrad (SiO2). The experimental results exhibit that modeled device parameters estimate the degraded circuit performance. In addition, the relative impact of each parameter on the circuit metrics is revealed, which is expected from the derived design equations. The key device parameters for modeling TID-induced circuit degradations include the base resistance, the transconductance, and the base-to-emitter capacitance.

Carbon nanomaterials with a different character of the chemical bond – graphene (sp2) and nanodiamond (sp3) are the building bricks for a new class of all-carbon hybrid nanomaterials, where the two different carbon networks with the sp3 and sp2 hybridization coexist, interact and even transform into one another. The unique electronic, mechanical, and chemical properties of the two border nanoallotropes of carbon ensure the immense application potential and versatility of these all-carbon graphene – diamond nanomaterials. The review gives an overview of the current state of the art of graphene – diamond nanomaterials, including their composites, heterojunctions, and other hybrids for sensing, electronic, energy storage, and other applications. Also, the graphene-to-diamond and diamond-to-graphene transformations at the nanoscale, essential for innovative fabrication, and stability and chemical reactivity assessment are discussed based on extensive theoretical, computational, and experimental studies.

In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slope (SS), and gate-induced drain leakage (GIDL). The proposed FinFET exhibited 4 times lower Ioff than modified S-FinFET called RFinFET with more improved DIBL characteristics while minimizing Ion reduction compared to RFinFET. Our results also confirmed that the proposed device showed improved DIBL and Ioff characteristics as gate channel length decreased.