Preprint Article Version 1 This version not peer reviewed

Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode

Version 1 : Received: 28 July 2017 / Approved: 28 July 2017 / Online: 28 July 2017 (12:44:55 CEST)

How to cite: Zabeli, M.; Caka, N.; Limani, M.; Kabashi, Q. Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode. Preprints 2017, 2017070084 (doi: 10.20944/preprints201707.0084.v1). Zabeli, M.; Caka, N.; Limani, M.; Kabashi, Q. Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode. Preprints 2017, 2017070084 (doi: 10.20944/preprints201707.0084.v1).

Abstract

The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements.

Subject Areas

CMOS inverter; NMOS transistor; PMOS transistor; voltage transfer characteristic (VTC), threshold voltage; voltage critical value; noise margins; NMOS transconductance parameter; PMOS transconductance parameter

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