Preprint Article Version 1 This version is not peer-reviewed

Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope

Version 1 : Received: 12 October 2018 / Approved: 12 October 2018 / Online: 12 October 2018 (07:50:42 CEST)

How to cite: Najam, F.; Yu, Y.S. Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope. Preprints 2018, 2018100261 (doi: 10.20944/preprints201810.0261.v1). Najam, F.; Yu, Y.S. Optimization of Line-Tunneling Type L-Shaped Tunnel Field-Effect-Transistor for Steep Subthreshold Slope. Preprints 2018, 2018100261 (doi: 10.20944/preprints201810.0261.v1).

Abstract

Recently L-shaped tunneling field-effect-transistor (LTFET) has been introduced to overcome the thermal subthreshold limit of conventional metal-oxide-semiconductor field-effect-transistors (MOSFET). In this work, shortcoming of LTFET was investigated. It was found that corner effect present in LTFET effectively degrades its subthreshold slope. To get rid of corner effect a new type of device with dual material gates is presented. The new device termed as DG-LTFET gets rid of the corner effect and results in a significantly improved subthreshold slope of less than 10 mV/dec, and an improved ON/OFF current ratio over LTFET. In this work DG-LTFET was evaluated for different device parameters, and bench-marked against LTFET. This work presents an optimum configuration of DG-LTFET in terms of device dimensions and doping levels, to get the best subthreshold, ON current and ambipolar performance from the DG-LTFET.

Subject Areas

band-to-band tunneling; L-shaped tunnel field-effect-transistor; double-gate tunnel field-effect-transistor; corner-effect

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