Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials2018, 8, 151.
Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151.
Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials2018, 8, 151.
Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151.
Abstract
We report the electrical characterization and the field emission properties of CVD-grown MoS2 bilayers deposited on SiO2/Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS2 and we report normally-on field effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~200 V/μm is able to extract current from the flat part of MoS2 bilayers, which therefore can be conveniently exploited for field emission applications even in low field-enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in 2D materials, fully describes the emission process.
Subject Areas
transition metal dichalcogenides; MoS2; field effect transistor; field emission
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Francesca Urban
Antonio Di Bartolomeo