Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials2018, 8, 151.
Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151.
Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials2018, 8, 151.
Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151.
Abstract
We report the electrical characterization and the field emission properties of CVD-grown MoS2 bilayers deposited on SiO2/Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS2 and we report normally-on field effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~200 V/μm is able to extract current from the flat part of MoS2 bilayers, which therefore can be conveniently exploited for field emission applications even in low field-enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in 2D materials, fully describes the emission process.
Keywords
transition metal dichalcogenides; MoS2; field effect transistor; field emission
Subject
Physical Sciences, Condensed Matter Physics
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
