Preprint Article Version 1 This version is not peer-reviewed

Transport and Field Emission Properties of MoS2 Bilayers

Version 1 : Received: 9 February 2018 / Approved: 11 February 2018 / Online: 11 February 2018 (04:25:10 CET)

A peer-reviewed article of this Preprint also exists.

Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151. Urban, F.; Passacantando, M.; Giubileo, F.; Iemmo, L.; Di Bartolomeo, A. Transport and Field Emission Properties of MoS2 Bilayers. Nanomaterials 2018, 8, 151.

Journal reference: Nanomaterials 2018, 8, 151
DOI: 10.3390/nano8030151

Abstract

We report the electrical characterization and the field emission properties of CVD-grown MoS2 bilayers deposited on SiO2/Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS2 and we report normally-on field effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~200 V/μm is able to extract current from the flat part of MoS2 bilayers, which therefore can be conveniently exploited for field emission applications even in low field-enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in 2D materials, fully describes the emission process.

Subject Areas

transition metal dichalcogenides; MoS2; field effect transistor; field emission

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