Transport and Field Emission Properties of MoS2 Bilayers

Francesca Urban; Maurizio Passacantando; Filippo Giubileo; Laura Iemmo; Antonio Di Bartolomeo

doi:10.20944/preprints201802.0080.v1

Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 9 February 2018 / Approved: 11 February 2018 / Online: 11 February 2018 (04:25:10 CET)

We report the electrical characterization and the field emission properties of CVD-grown MoS₂ bilayers deposited on SiO₂/Si substrate. Current-voltage characteristics are measured in the back-gate transistor configuration, with Ti contacts patterned by electron beam lithography. We confirm the n-type character of as-grown MoS₂ and we report normally-on field effect transistors. Local characterization of field emission is performed inside a scanning electron microscope chamber with piezo-controlled tungsten tips working as the anode and the cathode. We demonstrate that an electric field of ~200 V/μm is able to extract current from the flat part of MoS₂ bilayers, which therefore can be conveniently exploited for field emission applications even in low field-enhancement configurations. We show that a Fowler-Nordheim model, modified to account for electron confinement in 2D materials, fully describes the emission process.

transition metal dichalcogenides; MoS2; field effect transistor; field emission

PHYSICAL SCIENCES, Condensed Matter Physics

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Transport and Field Emission Properties of MoS₂Bilayers

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