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Zero-Energy Bound State Trapped in Line-Shaped Vortex in Topological Superconductor
Pedro Schlottmann
Posted: 05 December 2025
A Higher Degree of Magnetic Symmetry Induced by Intercalation of Non-Magnetic Na into Quasi-Two-Dimensional van der Waals gapped FeOCl
Tung-Yuan Yung
,Yi-Ching Huang
,Kuan-Yi Lee
,Chun-Min Wu
,Wen-Hsien Li
Posted: 05 December 2025
When a Surface Becomes a Network: SEM Reveals Hidden Scaling Laws and a Percolation-Like Transition in Thin Films
Helena Cristina Vasconcelos
,Telmo Eleutério
,Maria Gabriela Meirelles
,Reşit Özmenteş
Posted: 05 December 2025
DC and AC Conductivity of CoFe2O4/BaTiO3 Bilayers Deposited Over Nb-Doped SrTiO3(100) Substrates
João Oliveira
,Bruna M. Silva
,Tiago Rodrigues
,Jorge A. Mendes
,Manuel J. L. F. Rodrigues
,Michael Belsley
,Francis Leonard Deepak
,Bernardo G. Almeida
Multiferroic BaTiO3 (BTO, piezoelectric)/CoFe2O4 (CFO, magnetostrictive) bilayer thin films were prepared by laser ablation on conductive Nb-doped SrTiO3 (100) substrates to investigate the influence of BTO layer thickness on their structural, microstructural, dielectric, and electrical (DC and AC) properties. X-ray diffraction confirmed the coexistence of the cubic spinel CoFe2O4 phase and the tetragonal ferroelectric BaTiO3 phase. The films exhibit preferred orientation, with CFO showing the [400] direction along the growth axis and BTO displaying (100)/(001) planes stacked parallel to it. The CFO unit cell is compressed along the growth direction, while BTO presents the ferroelectric distortion with a tetragonality ratio (c/a) slightly below, but close to, the bulk value. Second harmonic generation studies further verified the non-centrosymmetric ferroelectric nature of BTO at room temperature. The temperature-dependent dielectric permittivity was modeled using the Havriliak–Negami function with an additional conductivity term to extract relaxation dynamics, DC conductivity, Curie temperature (Tc), and activation energies. The Curie temperature increases with BTO thickness, approaching the bulk value for thicker layers. DC conductivity activation energies exhibit a change at Tc, from below 0.5 eV for T < Tc to above 0.5 eV for T > Tc, consistent with small-polaron tunneling. The AC conductivity follows a Jonscher-type frequency dependence with two power-law contributions reflecting the behavior of both layers. Temperature-dependent analysis of the power-law exponents reveals that small-polaron tunneling dominates conduction in BTO, while ion hopping between octahedral sites governs conduction in CFO. Underoxidation leads to a more complex transport regime in BTO, showing a transition from quantum-mechanical tunneling below Tc to correlated barrier hopping above it. By revealing how transport processes operate within multiferroic oriented bilayer systems, these findings advance our understanding of material interactions and pave the way for the design of innovative multifunctional platforms optimized for spintronic technologies.
Multiferroic BaTiO3 (BTO, piezoelectric)/CoFe2O4 (CFO, magnetostrictive) bilayer thin films were prepared by laser ablation on conductive Nb-doped SrTiO3 (100) substrates to investigate the influence of BTO layer thickness on their structural, microstructural, dielectric, and electrical (DC and AC) properties. X-ray diffraction confirmed the coexistence of the cubic spinel CoFe2O4 phase and the tetragonal ferroelectric BaTiO3 phase. The films exhibit preferred orientation, with CFO showing the [400] direction along the growth axis and BTO displaying (100)/(001) planes stacked parallel to it. The CFO unit cell is compressed along the growth direction, while BTO presents the ferroelectric distortion with a tetragonality ratio (c/a) slightly below, but close to, the bulk value. Second harmonic generation studies further verified the non-centrosymmetric ferroelectric nature of BTO at room temperature. The temperature-dependent dielectric permittivity was modeled using the Havriliak–Negami function with an additional conductivity term to extract relaxation dynamics, DC conductivity, Curie temperature (Tc), and activation energies. The Curie temperature increases with BTO thickness, approaching the bulk value for thicker layers. DC conductivity activation energies exhibit a change at Tc, from below 0.5 eV for T < Tc to above 0.5 eV for T > Tc, consistent with small-polaron tunneling. The AC conductivity follows a Jonscher-type frequency dependence with two power-law contributions reflecting the behavior of both layers. Temperature-dependent analysis of the power-law exponents reveals that small-polaron tunneling dominates conduction in BTO, while ion hopping between octahedral sites governs conduction in CFO. Underoxidation leads to a more complex transport regime in BTO, showing a transition from quantum-mechanical tunneling below Tc to correlated barrier hopping above it. By revealing how transport processes operate within multiferroic oriented bilayer systems, these findings advance our understanding of material interactions and pave the way for the design of innovative multifunctional platforms optimized for spintronic technologies.
Posted: 05 December 2025
Advanced Machine Learning Models for High-Temperature Magnetoresistivity Predictions of Ni81Fe19 Monolayers
Tarik Akan
,Perihan Aksu
,Recep Sahingoz
,Feliks S Zaseev
,Vladislav B. Zaalishvili
,Tamerlan T Magkoev
A \( 5\,nm \) thick polycrystalline \( \mathrm{Ni_{81}Fe_{19}} \) film was sputter-deposited onto a circular 3-inch diameter, \( 390\,\mu m \) thick single-crystal wafer with \( \mathrm{SiO_2} \) surface layers. The magnetoresistance (MR) of the sample was analyzed as a function of the applied DC magnetic field and temperature using the Van der Pauw technique. Magnetic measurements were carried out over a temperature range of \( 25^{\circ}\mathrm{C} \) to \( 350^{\circ}\mathrm{C} \) using a Lake Shore Hall Effect Measurement System (HEMS). An external magnetic field ranging from \( +14$\,kG \) to \( -14$\,kG \) was applied at each temperature value to observe changes in resistance. Hall coefficients and resistance were obtained by applying current in both directions with different contact configurations.Machine learning techniques, including Random Forest Regression, were employed to predict magnetoresistivity beyond \( 350^{\circ}\mathrm{C} \) and estimate the Curie temperature (\( 570^{\circ}\mathrm{C} \)). This study highlights the potential of machine learning in accurately forecasting material properties beyond experimental limits, providing enhanced predictive models for the magnetoresistive behavior and critical temperature transitions of \( \mathrm{Ni_{81}Fe_{19}} \) [1–3].
A \( 5\,nm \) thick polycrystalline \( \mathrm{Ni_{81}Fe_{19}} \) film was sputter-deposited onto a circular 3-inch diameter, \( 390\,\mu m \) thick single-crystal wafer with \( \mathrm{SiO_2} \) surface layers. The magnetoresistance (MR) of the sample was analyzed as a function of the applied DC magnetic field and temperature using the Van der Pauw technique. Magnetic measurements were carried out over a temperature range of \( 25^{\circ}\mathrm{C} \) to \( 350^{\circ}\mathrm{C} \) using a Lake Shore Hall Effect Measurement System (HEMS). An external magnetic field ranging from \( +14$\,kG \) to \( -14$\,kG \) was applied at each temperature value to observe changes in resistance. Hall coefficients and resistance were obtained by applying current in both directions with different contact configurations.Machine learning techniques, including Random Forest Regression, were employed to predict magnetoresistivity beyond \( 350^{\circ}\mathrm{C} \) and estimate the Curie temperature (\( 570^{\circ}\mathrm{C} \)). This study highlights the potential of machine learning in accurately forecasting material properties beyond experimental limits, providing enhanced predictive models for the magnetoresistive behavior and critical temperature transitions of \( \mathrm{Ni_{81}Fe_{19}} \) [1–3].
Posted: 04 December 2025
Anomalous AC Susceptibility Response and Paramagnetic Meissner Phase of EuRbFe4As4 Superconductor
Adrian Crisan
,Alina M. Badea
,Ion Ivan
,Corneliu F. Miclea
,Daniel N. Crisan
,Armando Galluzzi
,Massimiliano Polichetti
Posted: 03 December 2025
Sextuple-Q Spin States in Centrosymmetric Hexagonal Magnets
Satoru Hayami
Posted: 01 December 2025
Synthesis of Turbostratic Graphene with Micron-Sized Domains from Activated Charcoal by Fast Joule Heating
Aisen Ruslanovich Prokopiev
,Nikolay Nikolaevich Loskin
,Pavel Vasilievich Vinokurov
Posted: 01 December 2025
Broadband Seismic Metamaterials Based on Gammadion-Shaped Chiral Structures
Yawen Shen
,Boyang Zhang
,Pengcheng Ma
,Qiujiao Du
,Hongwu Yang
,Pai Peng
,Fengming Liu
Posted: 26 November 2025
Integrated PbTe Quantum Dots for Two-Color Detection in II–VI Wide-Bandgap Diodes
Jakub M. Głuch
,Michał Szot
,Grzegorz Karczewski
Quantum dots (QDots) composed of the narrow-bandgap semiconductor PbTe were incorporated into the depletion region of p–n junctions based on wide-bandgap II–VI semiconductors (p-ZnTe/n-CdTe). The heterostructures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. The depletion region was engineered by depositing 20 alternating thin layers of CdTe and PbTe, followed by thermal annealing under ultrahigh vacuum conditions. As revealed by cross-sectional scanning electron microscopy (SEM), the initially continuous PbTe layers transformed into arrays of zero-dimensional nanostructures—PbTe quantum dots (QDs). The formation of PbTe QDs in a CdTe matrix arises from the structural mismatch between the zinc blende and rock salt crystal structures of the two materials. Electron-beam-induced current (EBIC) measurements confirmed that the PbTe QDs are located within the depletion region between the p-ZnTe and n-CdTe layers. The resulting p-ZnTe/n-CdTe diodes containing PbTe QDs exhibit pronounced sensitivity to infrared radiation in the spectral range of 1–4.5 μm, with a peak responsivity of approximately 8 V/W at a wavelength of ~2.0 μm and a temperature of 200 K. The temperature dependence of the cutoff wavelength demonstrates that the infrared response originates from band-to-band optical transitions within the PbTe QDs. In addition, the devices show sensitivity to visible radiation, with a maximum responsivity of 20 V/W at 0.69 μm. These results demonstrate that wide-bandgap p–n junctions incorporating narrow-bandgap quantum dots can function as dual-wavelength (visible and infrared) photodetectors, with potential applications in two-color detection and infrared solar cells.
Quantum dots (QDots) composed of the narrow-bandgap semiconductor PbTe were incorporated into the depletion region of p–n junctions based on wide-bandgap II–VI semiconductors (p-ZnTe/n-CdTe). The heterostructures were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates. The depletion region was engineered by depositing 20 alternating thin layers of CdTe and PbTe, followed by thermal annealing under ultrahigh vacuum conditions. As revealed by cross-sectional scanning electron microscopy (SEM), the initially continuous PbTe layers transformed into arrays of zero-dimensional nanostructures—PbTe quantum dots (QDs). The formation of PbTe QDs in a CdTe matrix arises from the structural mismatch between the zinc blende and rock salt crystal structures of the two materials. Electron-beam-induced current (EBIC) measurements confirmed that the PbTe QDs are located within the depletion region between the p-ZnTe and n-CdTe layers. The resulting p-ZnTe/n-CdTe diodes containing PbTe QDs exhibit pronounced sensitivity to infrared radiation in the spectral range of 1–4.5 μm, with a peak responsivity of approximately 8 V/W at a wavelength of ~2.0 μm and a temperature of 200 K. The temperature dependence of the cutoff wavelength demonstrates that the infrared response originates from band-to-band optical transitions within the PbTe QDs. In addition, the devices show sensitivity to visible radiation, with a maximum responsivity of 20 V/W at 0.69 μm. These results demonstrate that wide-bandgap p–n junctions incorporating narrow-bandgap quantum dots can function as dual-wavelength (visible and infrared) photodetectors, with potential applications in two-color detection and infrared solar cells.
Posted: 26 November 2025
Nanoscale Nickel-Chromium Powder as a Catalyst in Reducing the Temperature of Hydrogen Desorption from Magnesium Hydride
Alan Kenzhiyev
,Viktor N. Kudiiarov
,Alena A. Spiridonova
,Daria V. Terenteva
,Dmitrii B. Vrublevskii
,Leonid A. Svyatkin
,Dmitrii S. Nikitin
,Egor B. Kashkarov
Posted: 24 November 2025
Stoichiometry-Controlled Surface Reconstructions in Epitaxial ABO3 Perovskites for Sustainable Energy Applications
Habib Rostaghi Chalaki
,Ebenezer Seesi
,Gene Yang
,Mohammad El Loubani
,Dongkyu Lee
Posted: 21 November 2025
On the First Quantum Correction to the Second Virial Coefficient of a Generalized Lennard-Jones Fluid
Daniel Parejo
,Andres Santos
Posted: 20 November 2025
Magnetic Properties of Typical Selected Meteorites
Israel Felner
,Michael I. Oshtrakh
Posted: 20 November 2025
Topological Phase Transitions in Disordered LC Systems. Classical Analog of Quantum Transitions
Valeriy Efimovich Arkhincheev
Posted: 19 November 2025
A Complex Topological Phase in C-Spin Active Matter
Alessandro Scirè
Posted: 18 November 2025
The True Significance of Wave Mechanics Theory in Microwave Absorption Research: Redirecting Scientific Inquiry Toward Meaningful Theoretical Advancement
Yue Liu
Posted: 18 November 2025
E-H Pair Symmetry Breaking: Wavefunction-Free Nature of Josephson Effects
Xiuqing Huang
Posted: 12 November 2025
Transitions from Coplanar Double-Q to Noncoplanar Triple-Q States Induced by High-Harmonic Wave- Vector Interaction
Satoru Hayami
Posted: 11 November 2025
Microstructure of 09G2S Steel Near a Fatigue Crack Healed by Pulsed Current
Ilya S. Sugonyako
,Danila V. Tarov
,Elena A. Korznikova
,Gulnara R. Khalikova
,Alexander S. Semenov
,Konstantin V. Kukudzhanov
,Sergey V. Dmitriev
Posted: 10 November 2025
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