Preprint Article Version 1 This version is not peer-reviewed

Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers

Version 1 : Received: 7 September 2017 / Approved: 8 September 2017 / Online: 8 September 2017 (09:54:19 CEST)

How to cite: Xie, H.; Liu, G.; Zhang, L.; Zhou, Y.; Dong, C. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers. Preprints 2017, 2017090028 (doi: 10.20944/preprints201709.0028.v1). Xie, H.; Liu, G.; Zhang, L.; Zhou, Y.; Dong, C. Amorphous Oxide Thin Film Transistors with Nitrogen-Doped Hetero-Structure Channel Layers. Preprints 2017, 2017090028 (doi: 10.20944/preprints201709.0028.v1).

Abstract

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μFE = 15.0 cm2·V-1·s-1, SS = 0.5 V/dec, VTH = 1.5 V, ION/IOFF = 1.1×108) and stability (VTH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.

Subject Areas

amorphous oxide semiconductor (AOS); thin film transistor (TFT); nitrogen-doped amorphous InGaZnO (a-IGZO:N); nitrogen-doped amorphous InZnO (a-IZO:N); hetero-structure

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