Preprint Article Version 1 This version is not peer-reviewed

A High-Precision Adaptive Thermal Network Model for Monitoring the Junction Temperature of IGBTs

Version 1 : Received: 20 January 2018 / Approved: 23 January 2018 / Online: 23 January 2018 (02:34:06 CET)

A peer-reviewed article of this Preprint also exists.

An, N.; Du, M.; Hu, Z.; Wei, K. A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules. Energies 2018, 11, 595. An, N.; Du, M.; Hu, Z.; Wei, K. A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules. Energies 2018, 11, 595.

Journal reference: Energies 2018, 11, 595
DOI: 10.3390/en11030595

Abstract

This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the parameters of conventional Cauer-type are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by adaptive Cauer-type thermal network model is more accurate than that of the conventional model.

Subject Areas

insulated gate bipolar transistor (IGBT); thermal network; parameter identification; junction temperature

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