The effect of neutron irradiation of Si-Ge/Si film structures obtained by gas-phase epitaxy on the processes of charge carrier generation and the magnitude of the dark short-circuit current and open-circuit voltage caused by it is studied, it is shown that their magnitude practically does not change with time. The results obtained indicate that all types of structural defects, both associated with dopant impurities and radiation exposure, contribute to the generation of charge carriers in heated silicon structures with the participation of deep energy levels, which indicates the applicability of neutron processing of silicon materials to create thermal energy converters, operating at high temperatures.

This article describes a novel electrochemical on-chip biosensor that utilizes anti-PSA antibody (Ab) and silver nanoparticles (AgNPs) to enhance the sensing and detection capability of prostate specific antigen (PSA) in the blood. The AgNPs are prepared, characterized, and applied onto a silicon photonic on-chip biosensing receptor platform designed to enhance the accurate detection of PSA. The AgNPs were synthesized by a chemical reduction method using silver nitrate (AgNO₃) as the precursor. Transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy dispersion X-ray spectroscopy (EDS), small angle X-ray scattering (SAXS), X-ray diffraction (XRD), and light microscopy were among the methods used in the characterization and analysis of the AgNPs. Each stage of the immunosensor fabrication was characterized using cyclic voltammetry. The proposed immunosensor was applied in the detection of PSA, a prostate cancer biomarker, with a high sensitivity and a limit of detection of 0.17 ng/mL over a linear concentration range of 2.5 to 11.0 ng/mL. The immunosensor displayed good stability and was selective in the presence of interfering species like immunoglobulin (Ig) in human serum, ascorbic acid (AA), and diclofenac (Dic). The detectivity and sensitivity are significantly higher than previous reports on similar or related technologies.

Silicon has been proved to be one of the most promising anode materials for the next generation of lithium-ion battery. For the application in batteries, Si anode should have high capacity and must be industrially scalable. In this study, we have designed and synthesised a hollow structure to meet these requirements. All the processes are carried out without special equipment. The Si nanoparticles that are commercially available are used as the core sealed inside TiO₂ shell, with rationally designed void space between the particles and shell. The Si@TiO₂ are characterised using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscope (SEM). The optimised hollow structured silicon nanoparticles, when used as anode in lithium-ion battery, exhibit a high reversible specific capacity over 600 mAhg-1. This excellent electrochemical property of the nanoparticles can be attributed to their optimised phase and unique hollow nanostructure.

The design and engineering of antibacterial materials is key for preventing bacterial adherence and proliferation in biomedical and house-hold instruments. Silver nanoparticles (AgNPs) and chitosan (CHI) are broad-spectrum antibacterial materials with different properties, whose combined application is currently under optimization. This study proposes the formation of antibacterial films with AgNPs embedded in carboxymethylcellulose/chitosan multilayers by the layer-by-layer (LbL) method. The films were deposited onto nanoporous silicon (nPSi), an ideal platform for bioengineering applications, due to its biocompatibility, biodegradability, and bioresorbability. We focus on two alternative multilayer deposition processes: cyclic dip coating (CDC) and cyclic spin coating (CSC). The physicochemical properties of the films were the subject of microscopic, microstructural and surface-interface analyses. The antibacterial activity of each film was investigated against Escherichia coli (Gram-negative) and Staphylococcus aureus (Gram-positive) bacteria strains as model microorganisms. According to the findings, CDC technique produced multilayer films with higher antibacterial activity for both bacteria compared to the CSC method. Bacteria adhesion inhibition was observed from only 3 cycles. The developed AgNPs-multilayer composite film offers advantageous antibacterial properties for biomedical applications.

The microstructure of the coating during hot-dip galvanizing under industrial conditions of two structural steels, a low-silicon ASTM A36 steel and a high-silicon Q345B steel, both of commercial quality, have been characterized for industrial-relevant times. For both cases it is noted that the formation of the Fe-Zn phases begins in early stages during the heating of the steel, a situation in which all the phases are in the solid state. The characterization was carried out through traditional metallographic techniques including SEM-EDS and DRX equipment. The evolution in time of the microstructure of both steels is examined, being able to observe that the mechanism by which silicon accelerates the formation of Fe-Zn phases in galvanizing is related to the change in the energy of the interfaces caused by a silicon accumulation in the liquid phase in contact with the ζ layer. These results provided us with a deeper understanding of the phase evolution in the hot-dip galvanizing of high silicon steels.

Electrochemical deposition of silicon at room temperature is problematic due to intrinsically low conductivity of the deposits. This study reports the photoelectrochemical (PEC) deposition of silicon (Si) and silicon–carbon (Si–C) layers from an ionic liquid at temperature 40 oC using silicon tetrachloride (SiCl4) as a silicon precursor. Amorphous layers are deposited on p-type silicon (p-Si), p-type gallium arsenide (p-GaAs), and aluminum–copper alloy AA2024. The semi-conductor substrates are activated by white LED illumination, which generated photoelectrons, thereby making the substrate conductive with respect to the cathodic reaction. Photoresponsive-ness of the deposits is proven by the light-induced photocurrents on an optically inactive substrate made of the alloy AA 2024. The proposed method paves the way for the electrochemical modifica-tion of semiconductors and metals with Si and Si–C structures, which are applicable in various fields, such as; batteries, anti-corrosion coatings, photovoltaics, or PEC electrodes for hydrogen production.

The rapid development of the photovoltaic (PV) industry will result in an increase in the amount of electrical and electronic waste from used PV panels. Only in Poland, the total capacity installed in photovoltaic sources in Poland in May 2020 exceeded 1,950 MW, and the installation weight was approximately 120,000. tone. The problem arises in the recycling or management of this waste. This work presents methods used to recycle waste into photovoltaic modules. The authors investigated the possibility of mechanical and chemical processing of crystalline silicon. A method of thermal treatment of the panel was also proposed. As a result of the research, it was found that the stage of separating materials (crystalline cream, EVO foil, aluminum frame) plays an important role in the recycling process, which is not easy. Chemical treatment allows the silicon to become plastic and the temperature melts the back layer of the panel.

This computational research study will compare the specific charge capacity (SCC) between lithium ions inserted into crystallize silicon (c-Si) nanowires versus sodium ions inserted into amorphous silicon (a-Si) nanowires. It will be demonstrated that the potential energy V(r) within the lithium-silicon nanowire supports a coherent energy state model with discrete electron particles while the sodium-silicon nanowire potential energy will be discovered to be essentially zero and thus the electron current that travels through the sodiated silicon nanowire will be modeled as free electron with wave-like characteristics. This is due to the vast differences in the electric fields of the lithiated and sodiated silicon nanowires where the electric fields are of the order of 1e10 V/m and 1e-15 V/m respectively. The main reason for the great disparity in electric fields are due to the present of optical amplification within lithium ions and the absence of this process within sodium ions. It will be shown that optical amplification develops coherent optical interactions which is the primary reason for the surge of specific charge capacity in the lithiated silicon nanowire. Conversely, the lack of optical amplification is the reason for the incoherent optical interactions within sodium ions which is the reason for the low presence of SCC in sodiated silicon nanowires.

Tamm Plasmon Polariton (TPP) is a nanophotonic phenomenon that has attracted much attention due to its spatial strong field confinement, ease of mode excitation and polarization independence. TPP has applications in sensing, storage, lasing, perfect absorber, solar cell, nonlinear optics, and many others. In this work, we demonstrate a biosensing platform based on TPP resonant mode. Both theoretical analyses based on Transfer Matrix Method and experimental validation through nonspecific detection of liquids of different refractive indices and specific detection of SARS-CoV-2 nucleocapsid protein (N-protein) are presented. Results show that TPP biosensor has high sensitivity and good specificity. For N-protein detection, the sensitivity is 1.5 nm/(µg/ml) and the limit of detection can reach down to below 7 ng/ml with spectrometer of 0.01 nm resolution of wavelength shift. This work paves the way for design, optimization, fabrication, characterization, and performance analysis of TPP based biosensors

In this study, Silicon Carbide (SiC) nano-particle based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range SiC printed thermistors. Initially, commercial silver ink was screen printed to fabricate inter-digitated electrodes (IDE’s) onto flexible Kapton® substrate via screen printing. Thermistor inks with different weight ratios of SiC nano- particles dispersed in polyimide resin matrix were fabricated. The SiC-polyimide temperature sensing inks were screen printed atop the IDE structures to form fully printed thermistors and encapsulated with a adhesive backed polyimide film for humidity inhibition. The high temperature tolerance of the Kapton® allowed the the sensors to be tested over a wide temperature range form 25◦C to 170◦C. The printed SiC thermistors exhibit excellent repeatability and stability over 15 hours of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a temperature coefficient of Resistance (TCR) of -0.556 %/◦C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV which are comparable with printed thermistors previous reported. Further, the thermistor demonstrates an accuracy of ±1.35◦C which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10-90 %RH and a 4.2 % drift in baseline resistance after 100 cycles of aggressive bend testing at a 40°angle. The use of commercially available low cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.

The processes of hydrogen reduction of silicon and germanium chlorides under the conditions of radio-frequency (40.68 MHz) counteracted arc discharge stabilized between two rod electrodes were investigated. The main gas-phase and solid products of plasma-chemical transformations were determined. Thermodynamic analysis of SiCl4 + H2 and GeCl4 + H2 systems was carried out. It is shown that under the implemented experimental conditions, equilibrium components of the products are established. The detected spectra of chemical activity were studied, which gave reason to assume that the molecular mechanism of the hydrogen reduction process is the main one. The impurity composition of gas-phase and solid reaction products was investigated. The possibility of single-stage production of high-purity Si and Ge mainly in the form of compact ingots, as well as high-purity chlorosilanes and trichlorogermane, was shown.

: The paper presents the results of uniaxial tensile tests of samples of hypoeutectic aluminum-silicon alloy A319. According to the results of which the influence of surface treatment by a pulsed electron beam on the mechanical properties of the material was determined. The peculiarities of localization of deformation in the material, caused by grinding of the surface layer material structure due to rapid crystallization during electron beam treatment were revealed. The surface treatment up to 100 µm depth leads to the formation of a fine dendritic columnar structure of silumin and to an increase in the plasticity of the samples. The influence of surface treatment affects the increase of deformation localization in the region of stable concentrator before failure. The largest increase in ductility and localization of deformation occurs during processing with energy density of 15 J/cm2. In the process of specimen deformation, unstable, metastable, and stable areas of plastic deformation localization are formed and replaced, and the formation of stable areas of localized plastic deformation, in which the specimen fails at the end of the test, can be detected at the initial stages of testing. In specimens, during testing in the zone of localized plastic deformation, bands are formed that pass through the entire surface of the specimen at an angle from 35 to 55 degrees to the axis of tension, their evolution leads to the formation of stable zones of localized plastic deformation and to the failure of the specimen.

In this study, the degradation characteristics of radio-frequency (RF) low-noise amplifier (LNA) based on silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) due to total ionizing dose (TID) are investigated. The small-signal equivalent model of a SiGe HBT is utilized to analyze circuit-level performance including the input and the output matching and noise figure (NF). As a target circuit, an LNA with a cascode common-emitter stage with emitter degeneration is studied and the equation of each performance parameter is derived. The RF LNA fabricated using commercial 350 nm SiGe technology was exposed to X-ray irradiation with the total dose up to 3 Mrad (SiO2). The experimental results exhibit that modeled device parameters estimate the degraded circuit performance. In addition, the relative impact of each parameter on the circuit metrics is revealed, which is expected from the derived design equations. The key device parameters for modeling TID-induced circuit degradations include the base resistance, the transconductance, and the base-to-emitter capacitance.

The effects of soluble silicon fertilization on monocots and dicots have been widely studied. However, little is known regarding its effects on protecting epiphytes against insect and fungal pests. The efficacy of silicon fertilizer to reduce damage by thrip pest complexes, namely: Thrips palmi Karny, Frankliniella occidentalis Pergande, Chaetanaphothrips orchidii Moulton, and Chaetanaphothrips signipennis Bagnall (Thysanoptera: Thripidae), and fungal pathogens: Botrytis cinerea Persoon (Helotiales: Sclerotiniaceae) and Fusarium spp. Link (Hypocreales: Nectriaceae) was examined during a nine-month greenhouse trial in Hawaii. The trial assessed yield, quality, and pest damage across three common varieties of dendrobiums. All replicates received additional soluble silicon fertilizer applications alternating weekly between soil drench and foliar (50 mg Si/plant) applications. Yield, quality, and spray length, pest damage, plant vigor, SPAD, and leaf temperature were measured. Data were analyzed using a generalized linear model (glm) with repeated measures followed by post-hoc pair-wise comparisons in R, version 4.3.1. Treatment effects were significant at P

In this paper, we propose a novel approach to utilize silicon nanowires as high-sensitivity pH sensors. Our approach works based on fixing the current bias of silicon nanowires Ion Sensitive Field Effect Transistors (ISFETs) and monitor the resulting drain voltage as the sensing signal. By fine tuning the injected current levels, we can optimize the sensing conditions according to different sensor requirements. This method proves to be highly suitable for real-time and continuous measurements of biomarkers in human biofluids. To validate our approach, we conducted experiments, with real human sera samples to simulate the composition of human interstitial fluid (ISF), using both the conventional top-gate approach and the optimized constant current method . We successfully demonstrated pH sensing within the physiopathological range of 6.5 to 8, achieving an exceptional level of accuracy in this complex matrix. Specifically, we obtained a maximum error as low as 0.92\% (equivalent to 0.07 pH unit) using the constant-current method at the optimal current levels (1.71\% for top-gate). Moreover, by utilizing different pools of human sera with varying total protein content, we demonstrated that the protein content among patients does not impact the sensors' performance in pH sensing. Furthermore, we tested real-human ISF samples collected from volunteers. The obtained accuracy in this scenario was also outstanding, with an error as low as 0.015 pH unit using the constant-current method and 0.178 pH unit in traditional top-gate configuration.

Changes in the atomic and electronic structure of silicon carbide 3C-SiC (β-SiC), resulting from lead adsorption, have been studied within the density functional theory. The tests were conducted for three representative surfaces with varying degrees of lead coverage. Results indicate that chemisorption occurs, with the strongest binding, found on the hexagonal surface (111) in interaction with three dangling bonds. The adsorption energy rises with increasing coverage, especially as the surface approaches saturation. Analysis of the data was focused on parameters important for corrosion processes such as bond distances, binding energies, Bader charges and charge density difference.

This paper investigates the density, phase composition, microstructure and mechanical properties (microhardness, fracture toughness) of binderless WC + SiC ceramics obtained by conventional pressureless sintering (CPS) and Spark Plasma Sintering (SPS). α-WC nanopowders obtained by DC arc plasma chemical synthesis and β-SiC powders have been used as raw materials. The content of SiC particles was 1, 3, 5% wt. Excess graphite (0.3, 0.5% wt.) was added to α-WC nanopowders to decrease the volume fraction of W2C particles that negatively affect the mechanical properties of ceramics. WC + 1% wt. SiC + 0.3% wt. C ceramics are shown to have a homogeneous fine-grained microstructure, high relative density, increased microhardness and Palmquist fracture toughness. The CPS and SPS activation energies of WC + SiC nanopowders at an intensive shrinkage stage are determined using the Young-Cutler model. The effect of carbon and SiC particles on the CPS and SPS activation energies of tungsten carbide nanopowders has been analyzed. The CPS activation energies of WC, WC + C and WC + SiC + C nanopowders are shown to be closer to the carbon diffusion activation energy along α-WC grain boundaries. The SPS activation energies of WC and WC + SiC nanopowders turn out to be lower than the carbon grain boundary diffusion activation energy of α-WC.

Optical parametric amplification (OPA) represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media, for generating high-power optical pulses, optical microcombs, entangled photon pairs and a wide range of other applications. Here, we demonstrate optical parametric amplifiers based on silicon nitride (Si₃N₄) waveguides integrated with two-dimensional (2D) layered graphene oxide (GO) films. We achieve precise control over the thickness, length, and position of the GO films using a transfer-free, layer-by-layer coating method combined with accurate window opening in the chip cladding using photolithography. Detailed OPA measurements with a pulsed pump for the fabricated devices with different GO film thicknesses and lengths show a maximum parametric gain of ~24.0 dB, representing a ~12.2 dB improvement relative to the device without GO. We perform a theoretical analysis of the device performance, achieving good agreement with experiment and showing that there is substantial room for further improvement. This work demonstrates a new way of achieving high photonic integrated OPA performance by incorporating 2D materials.

The possibility of using Si-based anodes in lithium-ion batteries is actively investigated due to the increased lithium capacity of silicon. The paper reports the preparation of submicron silicon fibers on glassy carbon in the KI–KF–KCl–K2SiF6 melt at 720°C. For this purpose, the parameters of silicon electrodeposition in the form of fibers were determined by cyclic voltammetry, and ex-perimental samples of ordered silicon fibers with an average diameter from 0.1 to 0.3 μm were obtained under galvanostatic electrolysis conditions. Using the obtained silicon fibers, anode half-cells of lithium-ion battery was fabricated, and its electrochemical performance under mul-tiple lithiation and delithiation was studied. By means of voltametric studies, it is observed that charging and discharging of the anode based on the obtained silicon fibers occurs at potentials from 0.2 to 0.05 V and from 0.2 to 0.5 V, respectively. A change in discharge capacity from 520 to 200 mAh g-1 during the first 50 charge/discharge cycles at a charge current of 0.1C and a Coulomb ef-ficiency of 98-100% was shown. The possibility of charging silicon-based anode samples at charging currents up to 2C was also noted; the discharge capacity ranged from 25 to 250 mAh g-1.

Aluminum matrix nanocomposites have been the subject of much attention due to their extraordinary mechanical properties and thermal stability. This research focuses on producing and characterizing an aluminum matrix reinforced with silicon carbide (SiC) nanometric particles. The conventional powder metallurgy route was used to produce the nanocomposites, and the dispersion and mixing process was carried out by ultrasonication. The conditions of the dispersion and the volume fraction of the SiC were evaluated in the production of the nanocomposites. Microstructural characterization was carried out using optical microscopy (OM), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and electron backscatter diffraction (EBSD). Mechanical characterization was carried out using hardness and tensile tests. The dispersion agent was investigated, and isopropanol leads to better dispersion with fewer agglomerates. Increasing the volume fraction of the reinforcement improves the hardness of the nanocomposites. However, greater agglomeration of the reinforcement is observed for larger volume fractions. The greatest increase in hardness (77% increase compared to the hardness of the Al matrix) is obtained with 1.0 vol % of SiC, corresponding to the sample with the best dispersion. The mechanical characterization through tensile tests attests to the effect of the reinforcement on the Al matrix. The main strengthening mechanisms identified were the load transfer, the texture hardening, Orowan strengthening, and the increase in the density of dislocations in the nanocomposites.

In the paper the experimental methodology for the single-crystal circular plate deformation measurement and subsequent procedure for mechanical properties quantitation are developed. The procedure is based on a new numerical-analytical solution of nonlinear boundary-value problem for finite deformations of a circular anisotropic plate. Using the developed method, a study of the deformation of single-crystal circular plates formed on the basis of a silicon-on-insulator structure was carried out. The values of residual stresses are determined and it is shown that the presence of these stresses increases the flexural rigidity of the plate in several times.

Silicon Photomultipliers find applications across various fields. One potential Silicon Photomultiplier application domain is neutrino telescopes, where they may enhance the angular resolution. However, the elevated dark count rate associated with Silicon Photomultipliers represents a significant challenge to their widespread utilization. To address this issue, it is proposed to use Silicon Photomultipliers and Photomultiplier Tubes together. The Photomultiplier Tubes signals would serve as a trigger to mitigate the dark count rate, thereby preventing undue saturation of the available bandwidth. This paper presents an investigation into a fast and resource-efficient method for filtering Silicon Photomultiplier dark count rate. A low-resource and fast coincident filter has been developed, which removes the Silicon Photomultiplier dark count rate by using as trigger the Photomultiplier Tube input signals. The architecture of the coincidence filter, together with the first results obtained, which validate the effectiveness of this method are presented.

NUSES is a planned space mission aiming to test innovative observational and technological approaches related to the study of low-energy cosmic rays, gamma rays and high-energy astrophysical neutrinos. Two scientific payloads will be hosted onboard the NUSES space mission: Terzina and Zirè. Terzina will be an optical telescope readout by SiPM arrays, for the detection and study of Cerenkov light emitted by Extensive Air Showers generated by high-energy cosmic rays and neutrinos in the atmosphere. Zirè will focus on the detection of protons and electrons up to a few hundred MeV and to 0.1-10 MeV photons and will include the Low Energy Module (LEM). The LEM will be a particle spectrometer devoted to the observation of fluxes of low-energy electrons in the 0.1-7 MeV range and protons in the 3-50 MeV range along the Low Earth Orbit (LEO) followed by the hosting platform. The detection of Particle Bursts (PBs) in this Physics channel of interest could give new insight into the understanding of complex phenomena such as eventual correlations between seismic events or volcanic activity with the collective motion of particles in the plasma populating van Allen belts. With its compact sizes and limited acceptance, the LEM will allow the exploration of hostile environments such as the South Atlantic Anomaly (SAA) and the inner van Allen belt, in which are expected electron fluxes of the order of 106−7 cm−2 sr−1 s−1. Concerning the vast literature of space-based particle spectrometers, the innovative aspect of the LEM resides in its compactness, within 10x10x10 cm3, and in its “active collimation” approach dealing with the problem of multiple scattering at these very low energies. In this work, the geometry of the detector, its detection concept, its operation modes and the hardware adopted will be presented. Some preliminary results from the Monte Carlo simulation (Geant4) will be shown.

The sPHENIX experiment is a state-of-the-art jet and heavy flavor physics detector which successfully recorded its first Au + Au collision data at 200 GeV at RHIC. sPHENIX will provide heavy flavor physics measurements covering an unexplored kinematic region and unprecedented precision at RHIC to probe the parton energy loss mechanism, parton transport coefficients in quark-gluon plasma, and the hadronization process under various medium conditions. At the center of sPHENIX, the Monolithic-Active-Pixel-Sensor (MAPS) based VerTeX detector (MVTX) is a high-precision silicon pixel detector. The MVTX provides excellent position resolution and the capability of operating in continuous streaming readout mode, allowing precise vertex determination and recording a large data sample, both of which are particularly crucial for heavy flavor physics measurements. In this work, we will show the general performance of heavy-flavor hadron reconstruction. In addition, we will discuss the commissioning experience with sPHENIX. Finally, we will provide the projection of b-hadron and jet observables and discuss the estimated constraints on theoretical models.

Bending waveguide is one of the building blocks of on-chip photonic integrated circuits (PICs). Previous bending waveguides (BWs) usually suffer from larger footprint size in the bending region, which is are not conducive to develop large-scale and high-density PICs. To this end, we propose and numerically investigate an ultra-compact silicon-on-insulator 180-degree waveguide bend with a bending radius of 2 µm. Being different from the previous BWs, the design is based on topologically optimized digital metamaterials, which is implemented by using intelligent genetic algorithms. Simulated results show that the proposed structure has a -1.36 dB bend efficiency per 180-degree at a wavelength of 1.55 µm and occupies a footprint of only 4 × 4 µm2. Moreover, the crosstalk is <−20 dB and the loss is <2.6 dB over a >100 nm operating bandwidth (1.6-1.7 µm) for TE0 modes. With the wide operating bandwidth and ultra-compact footprint, the proposed silicon-based 180-degree waveguide bend shows a potential application as the fundamental component for optical communication interconnect in the ultra-highly integrated photonic circuit.

The work presented in this paper represents a preliminary study on the performance of the new Silicon tracker layer, the Layer 0 (L0), that will be installed on top of the Alpha Magnetic Spectrometer (AMS-02), at the end of 2024. AMS-02 is a cosmic rays (CR) detector that has been operating on the International Space Stations (ISS) since May 2011. Thanks to its 9-layer Silicon tracker, this apparatus can perform high energy CR measurements with an unprecedented level of statistics and precision. However, high Z (Z $\ge 15$) CR nuclei statistic is strongly affected by fragmentation along the detector: with the installation of the new Silicon layer will be possible to achieve new unique high energy (TeV region) measures for those nuclei along with increased statistics for all nuclei up to Zinc. To achieve this, a Silicon ladder prototype, that will be part of the final Silicon layer, has been exposed to an ions test beam at the super-proton-synchrotron (SPS) of the CERN to characterize its charge resolution and the readout electronics. Preliminary results have shown a charge resolution of 10 $\%$ for nuclei up to Z=7.

The magnetic properties of 0.10 mm ultra-thin grain-oriented (UTGO) silicon steel and Fe-based amorphous (FBA) alloy under sinusoidal excitation were measured experimentally, and the magnetic field strength and iron loss of the two materials under different frequencies and magnetic densities were obtained. Based on the measured data, the magnetization and loss characteristics of the two materials were analyzed and compared. Furthermore, two Epstein square ring models of the same specification and different materials were designed, and the reliability of the models was verified. Then, the electromagnetic characteristics of the two Epstein square ring models at higher and lower frequencies were calculated by using the finite element method, and the iron loss was obtained and compared. The results show that the FBA alloy has good application characteristics at low frequency and low power, and the 0.10 mm UTGO silicon steel has good application characteristics at high frequency and high power. This research can provide important data basis to promote the application of these two materials in new energy equipment.

Crystalline silicon nanomembrane (Si NM) is promising in wearable and implantable bioelectronics due to its electrical and mechanical performances. However, the current explorations are not enough to firmly bridge ultrathin encapsulation strategies with high performance crystalline Si NM based transistors. In this work, we utilized Al2O3/alucone as the ultrathin encapsulation strategies aim to thoroughly investigate the effect of gate dielectric surface area on the electrical performance of crystalline Si NM based metal-oxide-semiconductor capacitors (MOSCAPs). The comparative analysis was implemented on the three types of diameters (Ø) MOSCAPs with and without Al2O3/alucone encapsulation under planar and concave/convex bending conditions. Benefited from the Al2O3/alucone ultrathin encapsulations, the stability of gate leakage current density, and interfacial characteristics were maintained and improved under mechanical bending deformations for MOSCAPs with predefined Ø of 160, 240, and 320 μm compared to the bare MOSCAPs. Combined with the Ø-related mechanical analysis on the maximum strain in the critical layers and the practical measurements, the encapsulated MOSCAPs with Ø 160 μm showed the most stable electro-mechanical performances. The variations for encapsulated MOSCAPs with three types of Ø emerged in the oxide layer and the interface at dielectric/Si NM that were carefully evaluated according to the bending deformations. These findings are significant for leveraging the practical applications in the ultrathin encapsulation strategies for reliable operations of crystalline Si NM based integrated circuits (ICs).