Deformations of Single-Crystal Silicon Circular Plate: Theory and Experiment

Sergey Aleksandrovich Lychev; Alexander Vyacheslavovich Digilov; Gleb Dmitrievich Demin; Evgeney Eduardovich Gusev; Ivan Vasilievich Kushnarev; Nikolay Alekseevich Djuzhev; Vladimir Aleksandrovich Bespalov

doi:10.20944/preprints202312.1968.v1

Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 25 December 2023 / Approved: 26 December 2023 / Online: 26 December 2023 (10:09:08 CET)

In the paper the experimental methodology for the single-crystal circular plate deformation measurement and subsequent procedure for mechanical properties quantitation are developed. The procedure is based on a new numerical-analytical solution of nonlinear boundary-value problem for finite deformations of a circular anisotropic plate. Using the developed method, a study of the deformation of single-crystal circular plates formed on the basis of a silicon-on-insulator structure was carried out. The values of residual stresses are determined and it is shown that the presence of these stresses increases the flexural rigidity of the plate in several times.

micro/nanoelectromechanical system (MEMS/NEMS); membrane; crystalline anisotropy; single-crystal material; silicon-on-insulator (SOI); deformation

Physical Sciences, Applied Physics

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Deformations of Single-Crystal Silicon Circular Plate: Theory and Experiment

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