Detection of formaldehyde is very important in terms of life protection, as it can cause serious injury to eyes, skin, mouth and gastrointestinal function if indirectly inhaled and hence researchers are putting effort in developing novel and sensitive device. In this work, we have fabricated an electro-chemical sensor in the form of a field effect transistor (FET) to detect formaldehyde over wide range (10 nM to 1 mM). For this, ZnO nanosheets (NS) were first synthesized by hydrothermal method with in-situ deposition on cleaned SiO₂ coated Si (100) substrate. The synthesized materials were characterized for morphology and purity and surface area (31.718 m²/g). The developed device was tested for formaldehyde detection at room temperature that resulted in a linear response with concentration (96%), sensitivity value of 0.27 mA/M/cm² and a low detection limit of 210 nM, and a high 0.93194 return.

Flexible capacity applications demands to large energy storage density and high breakdown electric field strength of flexible films. Here, P(VDF-HFP) with ultra-thin Al2O3 nanosheets composite films were designed and fabricated through an electrospinning process followed by hot-pressing in sandwich structured. The results show that the insulating ultra-thin Al2O3 nanosheets and the sandwich structure can enhance the composites' breakdown field (by 24.8%) and energy density (by 30.6%) remarkedly to P(VDF-HFP) polymer matrix. An energy density of 23.5 J/cm3 at the ultrahigh breakdown field of 740kV/mm can be therefore realized. Insulating test and phase-field simulation results reveal that ultra-thin nanosheets insulating buffer layers can reduce the leakage current in composites, thus it effects the electric field spatial distribution to enhance breakdown strength. Our research provides a feasible method to increase the breakdown strength of ferroelectric polymers, which is comparable to those of non-ferroelectric polymers.

Mechanically strong and thermally stable films obtained from a water-based polyurethane (PU) dispersion with small (0.1–1.5 wt.%) additions of graphene oxide nanosheet (GO) were studied through elemental analysis, X-ray photoelectron spectroscopy, differential thermogravimetry, and Raman spectroscopy. Moreover, the depletion of near-surface layers in nitrogen was presented for all the samples under study. It was found that the introduction of GO into a PU matrix was ac-companied by a partial reduction of graphene oxide nanosheet and an increase in the concentra-tion of defects in its structure.

Herein, we introduce a boron nitride nanosheet (BNNS)-reinforced cellulose nanofiber (CNF) film as a sustainable oxygen barrier film that can potentially be applied in food packaging. Most of commodity plastics are oxygen-permeable. CNF exhibits an ideal oxygen transmittance rate (OTR) of <1 cc/m²/day in highly controlled conditions. A CNF film typically fabricated by the air drying of a CNF aqueous solution reveals an OTR of 19.08 cc/m²/day. The addition of 0-5 wt% BNNS to the CNF dispersion before drying results in a composite film with highly improved OTR, 4.7 cc/m²/day, which is sufficient for meat and cheese packaging. BNNS as a 2D nanomaterial increases the pathway of oxygen gas and reduces the chances of pin-hole formation during film fabrication involving water drying. In addition, BNNS improves the mechanical properties of the CNF films (Young’s modulus and tensile strength) without significant elongation reductions, probably due to the good miscibility of CNF and BNNS in the aqueous solution. BNNS addition also produces negligible color change, which is important for film aesthetics. An in vitro cell experiment was performed to reveal the low cytotoxicity of the CNF/BNNS composite. This composite film has great potential as a sustainable high-performance food packaging material.

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) nanosheets have shown extensive applications due to their excellent physical and chemical properties. However, the low light absorption efficiency limits their application in optoelectronics. By rolling up 2D TMDCs nanosheets, the one-dimensional (1D) TMDCs nanoscrolls are formed with spiral tubular structure, tunable interlayer spacing and opening ends. Due to their increased thickness of scroll structure, the light absorption is enhanced. Meanwhile, the rapid electron transportation is confined along the 1D structure. Therefore, the TMDCs nanoscrolls show improved optoelectronic performance compared to 2D nanosheets. In addition, the high specific surface area and active edge site from bending strain of basal plane make them promising materials for catalytic reaction. Thus, the TMDCs nanoscrolls have attracted intensive attention in recent years. In this review, the structure of TMDCs nanoscrolls is firstly demonstrated and followed by various preparation methods of the TMDCs nanoscrolls. Afterwards, the applications of TMDCs nanoscrolls in the fields of photodetection, hydrogen evolution reaction, and gas sensing are discussed.

Crystalline phase engineering is a prominent strategy for synergistically optimizing the sur-face-body phases of a catalyst. In this work, TiO2 nanosheets assembled into nanotubes (TNSTs) with two-phases of anatase and rutile were firstly synthesized via crystal engineering by simple thermal annealing, and subsequently loaded with Ru nanoparticles to create efficient benzene hydrogenation catalyst Ru/TNSTs. The well- designed nanosheet-tubes structure boasts large specific surface area and excellent transmission channels, which effectively prevents the ag-glomeration and deactivation of loaded Ru nanoparticles, as well as promotes the internal diffu-sion in the reaction process of benzene hydrogenation to cyclohexene. Furthermore, titanium dioxide nanosheet-tubes contain numerous Ti3+ defects, which not only improves the overall generation rate of cyclohexene, but also enhances the suppression of cyclohexene adsorption. Most importantly, the two-phases of titanium dioxide increases the ratio of the electron defi-ciencies of Ru and promotes cyclohexene desorption. These synergistic properties enhance the selectivity and efficiency of the Ru/TNSTs catalysts, resulting in excellent performance in the hydrogenation of benzene to cyclohexene. Especially the Ru/TNSTs-4 catalyst achieves a 95% in-itial selectivity and 51% yield of cyclohexene in the reaction, outperforming most supported Ru-based catalysts. This work may provide new perspectives for designing efficient benzene hydrogenation catalysts via crystalline phase engineering.

Based on the minimum conduction band edge caused by the minimum channel potential resulting from the quasi-3D scaling theory and the 3D density of state (DOS) accompanied by the Fermi-Dirac distribution function on the source and drain sides, a unified semiconductor-device-physics-based ballistic model is developed for the threshold voltage of modern multiple-gate (MG) transistors, including FinFET, W-gate MOSFET, and Nanosheet (NS) MOSFET. It is shown that the thin silicon, thin gate oxide, and high work function will alleviate the ballistic effects and resist the threshold voltage degradation. Besides, as the device dimension is further reduced to give rise to the 2D/1D DOS, the lowest conduction band edge is hence increased to resist the threshold voltage degradation. The nanosheet MOSFET exhibits the largest threshold voltage among the three transistors due to the smallest minimum conduction band edge caused by the quasi-3D minimum channel potential. Compared to P-type MOSFET (P-FET), the N-FET shows more threshold voltage because the electron has a more effective mass than the hole

In this paper, we study the effect of parasitic channel on electrical characteristics and power consumptions of vertically stacked gate-all-around (GAA) silicon nanosheet (NS) MOSFETs of the bulk and silicon-on-insulator (SOI) substrates. Through deliberate control of the bottom parasitic channel coverage, we systematically assess its influence on DC, AC, and RF characteristics including power consumption. The observed findings highlight a significant differentiation among the bottom parasitic channels: GAA (i.e., control sample with 100% coverage), omega-shaped gate NS (70% and 80% coverages), and FinFET (60% coverage). Compared with the device with a 60% coverage channel, the device with a 100% coverage channel possesses 3520% and 8030% normalized leakage current improvement for both NFET and PFET under the bulk substrate, respectively. Compared with bulk-substrate devices, the SOI-substrate devices further significantly improve the leakage current. Due to enhanced off-state current leakages in the 100% covered bulk-substrate device, the static power demonstrates a notable improvement (about 98.1%), compared to 60% covered devices. Hence, the utilization of a 60% covered channel will result in a degradation of both device and circuit performance. The observation of GAA NS MOSFET indicates that an increase in the bottom parasitic channel coverage ratio leads to a positive impact on power consumption and leakage currents. The examination presented here is useful in the fabrication of stacked GAA NS MOSFETs.