We present the results on photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm sized crystalline Si nanoparticles (NP) deposited on glass substrates. Finite difference time domain (FDTD) and finite element mesh (FEM) modeling of absorbed light intensity and photo-induced spatial temperature distribution across the Si NP films were well correlated with the local temperatures measured by micro-Raman spectroscopy and used for determination of heat conductivities in the films of various thicknesses. Cubic-to-hexagonal phase transition in these films caused by laser heating was found to be heavily influenced by the film thickness and heat conductive properties of glass substrate, on which the films were deposited. Heat conductivities across the drop-casted Si nanogranular films were found to be in the range of lowest heat conductivities of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.

We propose a deep learning algorithm that directly compensates for luminance degradation owing to the deterioration of organic light emitting diode (OLED) devices to address the burn-in phenomenon of OLED displays. Conventional compensation circuits are encumbered by a high cost of development and manufacturing processes owing to their complexity. However, given that deep learning algorithms are typically mounted on a system on chip (SoC), the complexity of the circuit design is reduced, and the circuit can be reused by re-learning only the changed characteristics of the new pixel device. The proposed approach comprises deep feature generation and multi-stream self-attention, which decipher the importance of the variables, and the correlation between burn-in-related variables. It also utilizes a deep neural network that identifies the nonlinear relationship between the extracted features and luminance degradation. Thereafter, the luminance degradation is estimated from the burn-in-related variables, and the burn-in phenomenon can be addressed by compensating for the luminance degradation. The experimental results revealed that compensation was successfully achieved within an error range of 4.56%, and demonstrate the potential of a new approach that can mitigate the burn-in phenomenon by directly compensating for pixel-level luminance deviation.

The paper describes a new formula for calculating the mutual inductance between a thin conical sheet inductor and a filamentary circular loop, which are coaxial. The presented formula is derived semi-analytically using the complete elliptic integrals of the first, second, and the third kind, along with the integral term which will be solved numerically. The results are validated using double and single integration methods, as well as the semi-analytical formula. The mutual inductance between a thin wall solenoid and a filamentary circular loop can be obtained using the new formula for the conical coil and circular loop. Presented formulas can be useful in various applications, such as broadband RF and wireless power transfer systems that utilize conical inductors. Overall, the paper presents a valuable contribution to the field of inductor design and can be useful in various applications involving conical inductors.

The nitrogen-doped amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with double-stacked channel layers (DSCL) were prepared and characterized. The DSCL structure composed of nitrogen-doped amorphous InGaZnO and InZnO films (a-IGZO:N/a-IZO:N or a-IZO:N/a-IGZO:N) made the corresponding TFT devices exhibit quite large field-effect mobility due to the existence of double conduction channels. Especially, the a-IZO:N/a-IGZO:N TFTs showed even better electrical performance (μ_FE = 15.0 cm²·V^-1·s^-1, SS = 0.5 V/dec, V_TH = 1.5 V, I_ON/I_OFF = 1.1×10⁸) and stability (V_TH shift of 1.5, -0.5, and -2.5 V for positive bias-stress, negative bias-stress and thermal stress tests, respectively) than the a-IGZO:N/a-IZO:N TFTs. Based on the X-ray photoemission spectroscopy measurements and energy band analysis, it was assumed that the optimized interface trap states, the less ambient gas adsorption, and the better suppression of oxygen vacancies in the a-IZO:N/a-IGZO:N hetero-structures might be responsible for the better behaviors of the corresponding TFTs.

Despite significant advances in metallurgy and the potential to create high and very high-strength steel, all international specifications for steel design provided little information about the limits of slenderness for high-strength steel sections (HSSs) and didn’t give anything about the design of very high-strength steel sections (VHSSs). The American structural steel design specification covers circular hollow sections (CHS) of steel grades up to S690, while it isn't in ANSI/AISC 360-16 and ASTM A514/A514M. Euro code EN 1993-1-1 can be applicable only to steel grades up to S460. EN 1993-1-3 and EN 1993-1-12 contain supplementary rules for cold-formed members and HSS (S460- S700), respectively. Though ductility requirements for (HSS) are specifically established in EN 1993-1-12, it is largely a continuation of the normal-strength-steel design procedures standardized in EN 1993-1-1, where (HSSs) are largely treated as normal-strength steels in these rules, and the same design approaches are used. The behavior of high and very high-strength steel circular hollow sections under axial compression load is studied in this research. A total of 16 nonlinear finite-element (FE) models were generated to replicate stub column tests that were experimentally tested by others in previous research. Hence, a parametric study is conducted using forty FE models developed to investigate the local buckling behavior under various slenderness ratios comprehensively. The developed models cover slenderness ratios ranging from 20 to 1226 and steel grades S460 and S1100 with yield stress equal 460 MPa and 1152 MPa, respectively. The FE results were combined with 105 previously collected experimental results to assess the applicability of existing codified design methodologies in the Euro code and the North American codes of cold-formed CHS. Based on the results of this study, new cross-sectional slenderness limits and new design equations for more efficient simple designs were presented for high and very-high strength steel circular hollow sections and Compared with the results of experimental tests and FE models.

This paper gives an overview of the large-scale tectonic styles encountered in orogens worldwide. Thin-skinned and thick-skinned tectonics represent two end member styles recognized in mountain ranges. Both styles are encountered in former passive margins of continental plates. Thick-skinned style including the entire crust and possibly the lithospheric mantle are associated with intracontinental contraction. Delamination of subducting continental crust and horizontal protrusion of upper plate crust into the opening gap occurs in the terminal stage of continent-continent collision. Continental crust thinned prior to contraction is likely to develop relatively thin thrust sheets of crystalline basement. A true thin-skinned type requires a detachment layer of sufficient thickness. Thickness of the décollement layer as well as the mechanical contrast between décollement layer and detached cover control the style of folding and thrusting within the detached cover units. In subduction-related orogens, thin- and thick-skinned deformation may occur several hundreds of kilometers from the plate contact zone. Basin inversion resulting from horizontal contraction may lead to the formation of basement uplifts by the combined reactivation of pre-existing normal faults and initiation of new reverse faults. In most orogens thick-skinned and thin-skinned structures both occur and evolve with a pattern where nappe stacking propagates outward and downward

In the present work we revise and extend the Characteristic Crystallographic Element (CCE) norm, an algorithm used to simultaneously detect radial and orientational similarity of computer-generated structures with respect to specific reference crystals and local symmetries. Based on the identification of point group symmetry elements, the CCE descriptor is able to gauge local structure with high precision and finely distinguish between competing morphologies. As test cases we use computer-generated monomeric and polymer systems of spherical particles interacting with the hard-sphere and square-well attractive potentials. We demonstrate that the CCE norm is able to detect and differentiate, between others, among: hexagonal close packed (HCP), face centered cubic (FCC), hexagonal (HEX) and body centered cubic (BCC) crystals as well as non-crystallographic fivefold (FIV) local symmetry in bulk 3-D systems; triangular (TRI), square (SQU) and honeycomb (HON) crystals, as well as pentagonal (PEN) local symmetry in thin films of one-layer thickness (2-D systems). The descriptor is general and can be applied to identify the symmetry elements of any point group for arbitrary atomic or particulate system in two or three dimensions, in the bulk or under confinement.

Emulsion stabilisation of base layers surfaced with chip seals often proves problematic with chips punching into the base and early distress. This can be aggravated by the use of modified binders that restricts the evaporation of moisture from pavement layers. The introduction of New-age (Nano) Modified Emulsion (NME) stabilisation has the advantage that water is chemically repelled from the stabilised layer resulting in an accelerated development of strength. A need was identified to evaluate the early life performance of selected chip seals, together with identified binders. Three different chip seal surfacings with unconventional modified binders were constructed and evaluated using Accelerated Pavement Testing (APT) with the MMLS3. The objectives of the experimental design and testing were to evaluate binder performance, early loss of chips before chip orientation at low temperatures, punching of the chips into the NME stabilised base, deformation characteristics of a Cape seal and the effect of the use of a standard normal modified binder. This paper contains details of the NME base layer, the binder and seal selection and the test results. It is shown that a cost-effective thin chip seal in combination with a suitable binder can be used on a NME stabilised base with confidence.