Talbot effect is a self-imaging or lensless imaging phenomenon of a periodic grating illuminated by a collimated light beam at regular distances from the grating. Research on the Talbot effect has recently made significant strides thanks to the quick development of optical superlattices. The emergence of various applications of this effect in fields such as optics, acoustics, X-ray, plasmonics, and information processing has led to the increasing importance of obtaining a Talbot carpet with the use of different structures. In this paper, we investigate the Talbot effect that originates from the tunneling effect between an ensemble of vertically coupled cylindrical quantum dots (QDs). The Talbot carpet can be manipulated by changing the parameters of the QD system. In the current paper, two modified Pöschl-Teller potentials were used to model the QDs ensemble. The exciton’s lifetime and tunneling time’s dependence on the first QD’s potential half-width is found for a fixed value of the external electric field. The nonlinear changes in the refractive index and absorption spectrum dependent on the tunneling effect are obtained. Afterward, the Talbot carpet formation is investigated, particularly the dependences of the formed periodic wavefront’s visibility on medium length, coupling field’s strength, and tunneling parameter. Finally, we have observed the intensity distribution of the diffraction field at Talbot half-distance.

At present, the world is now passing a very far different time than normal situation due to the COVID-19 pandemic crisis. The global life-style and human civilization is currently progressing with down-stream that affecting almost every sectors necessary for human civilizations except the current environmental situation. To control the COVID-19 spreading, most of the countries are following lockdown process that reduces human mobility, thus reducing the CO2 emission to the environment. Though the COVID-19 pandemic is a blessing for the present environment, however, the post-COVID world will face a massive thrust of energy and only conventional energy resources may not be enough to mitigate the energy demands. Solar power generation technology mainly the photovoltaic (PV) systems and their advancement can be the leading possibilities to minimize the gap between the power demand and generation. It is now time to think how we can improve the PV power generation in future and the post-COVID world. In this encyclopaedia communication, we report on Nano-technological approach to improve the conversion efficiency of GaAs solar cells. We have designed and optimized several types of nano-structured assemblies that can be implemented to reduce the front surface incident light reflection losses thus can assist to improve the conversion efficiency of GaAs solar cells.

The authors of the article performed computer simulation of buffer amplifiers (BA), which have medium and extremely small values of the offset voltage's systematic component (V_off), for different technological processes (Si, GaAs and GaN). The proposed control units are distinguished by a small number of elements and allow operation in the range of low and high temperatures. The variants of circuitry implementation of control units based on GaAs, GaN depletion-mode CMOS and JFET technological processes are considered. The results of the comparative modeling showed that the basic circuit of the BA on two field-effect transistors, when implemented on various modifications of GaN MOS and depletion-mode MOS transistors, provides sufficiently low values of the offset voltage's systematic component (less than 2 μV). The proposed BAs are designed for use in the structure of the Sallen-Key low-pass filter (LPF) when they are implemented both on mid-frequency Si CJFET and on GaAs microwave transistors. Low values of the LPF V_off have a positive effect on the effective capacity of the ADC. An example of switching on a BA in the JFET OpAmp structure based on the depletion-mode MOS input stage and a “folded” cascode, which, with 100% negative feedback, can be used in the Sallen-Key LPF, is considered. Computer simulation of the JFET/MOS OpAmp showed that the OpAmp has an open-loop voltage gain of 76-85dB, and its V_off is within 7µV in the temperature range from -60°C to +120°C. The presented circuitry of buffer amplifiers is intended, first of all, for the tasks of designing precision Sallen-Key low-pass filter (low-pass filter, high-pass filter, PF, RF).

The zero offset voltage in anti-aliasing low-pass filters (LPF) included at the ADC input has a significant effect on the effective bit rate of the ADC. The article discusses methods for minimizing the systematic component of the zero offset voltage (V_OS) of operational amplifiers (Op-Amp) in the structure of the LPF, due to the degradation of the current gain of the base (b) of bipolar transistors for an extremely common subclass of Op-Amp with one high-impedance node. The methods of matching a high-impedance Op-Amp node and a buffer amplifier with the help of special correcting SCM^p and SCMⁿ multipolars are proposed. Methods of description and formation of the given coefficients of weak current asymmetry of typical Op-Amp functional units (current mirrors, input DS, buffer amplifiers, SRC, etc.) are presented. As an example, the results of computer simulation of GaAs Op-Amp with small V_OS performed on JFET field and p-n-p bipolar transistors are given.