@article{Li2003, abstract = {Successive ion layer adsorption and reaction (SILAR) originally developed for the deposition of thin films on solid substrates from solution baths is introduced as a technique for the growth of high-quality core/shell nanocrystals of compound semiconductors. The growth of the shell was designed to grow one monolayer at a time by alternating injections of air-stable and inexpensive cationic and anionic precursors into the reaction mixture with core nanocrystals. The principles of SILAR were demonstrated by the CdSe/CdS core/shell model system using its shell-thickness-dependent optical spectra as the probes with CdO and elemental S as the precursors. For this reaction system, a relatively high temperature, about 220-240 °C, was found to be essential for SILAR to fully occur. The synthesis can be readily performed on a multigram scale. The size distribution of the core/shell nanocrystals was maintained even after five monolayers of CdS shell (equivalent to about 10 times volume increase for a 3.5 nm CdSe nanocrystal) were grown onto the core nanocrystals. The epitaxial growth of the core/shell structures was verified by optical spectroscopy, TEM, XRD, and XPS. The photoluminescence quantum yield (PL QY) of the as-prepared CdSe/CdS core/shell nanocrystals ranged from 20 percent to 40 percent, and the PL full-width at half-maximum (fwhm) was maintained between 23 and 26 nm, even for those nanocrystals for which the UV-vis and PL peaks red-shifted by about 50 nm from that of the core nanocrystals. Several types of brightening phenomena were observed, some of which can further boost the PL QY of the core/shell nanocrystals. The CdSe/CdS core/shell nanocrystals were found to be superior in comparison to the highly luminescent CdSe plain core nanocrystals. The SILAR technique reported here can also be used for the growth of complex colloidal semiconductor nanostructures, such as quantum shells and colloidal quantum wells.}, author = {J. Jack Li and Y. Andrew Wang and Wenzhuo Guo and Joel C. Keay and Tetsuya D. Mishima and Matthew B. Johnson and Xiaogang Peng}, doi = {10.1021/ja0363563}, issn = {00027863}, issue = {41}, journal = {Journal of the American Chemical Society}, month = {10}, pages = {12567-12575}, pmid = {14531702}, title = {Large-scale synthesis of nearly monodisperse CdSe/CdS core/shell nanocrystals using air-stable reagents via successive ion layer adsorption and reaction}, volume = {125}, year = {2003}, } @article{Xie2005, abstract = {We report on the preparation and structural characterization of CdSe nanocrystals, which are covered by a multishell structure from CdS and ZnS. By using the newly developed successive ion layer adhesion and reaction (SILAR) technique, we could gradually change the shell composition from CdS to ZnS in the radial direction. Because of the stepwise adjustment of the lattice parameters in the radial direction, the resulting nanocrystals show a high crystallinity and are almost perfectly spherical, as was investigated by X-ray diffraction and electron microscopy. Also, due to the radial increase of the respective valence- and conduction-band offsets, the nanocrystals are well electronically passivated. This leads to a high fluorescence quantum yield of 70-85 percent for the amine terminated multishell particles in organic solvents and a quantum yield of up to 50 pecent for mercapto propionic acid-covered particles in water. Finally, we present experimental results that substantiate the superior photochemical and colloidal stability of the multishell particles. © 2005 American Chemical Society.}, author = {Renguo Xie and Ute Kolb and Jixue Li and Thomas Basché and Alf Mews}, doi = {10.1021/ja042939g}, issn = {00027863}, issue = {20}, journal = {Journal of the American Chemical Society}, month = {5}, pages = {7480-7488}, pmid = {15898798}, title = {Synthesis and characterization of highly luminescent CdSe-core CdS/Zn 0.5Cd0.5S/ZnS multishell nanocrystals}, volume = {127}, year = {2005}, } @article{MAYO2014, title = {Surface-plasmon mediated photoluminescence from Ag-coated ZnO/MgO core–shell nanowires}, journal = {Thin Solid Films}, volume = {553}, pages = {132-137}, year = {2014}, note = {European Materials Research Society (E-MRS) Spring Meeting 2013 Symposium O: Synthesis, processing and characterization of nanoscale multi functional oxide films IV}, issn = {0040-6090}, doi = {https://doi.org/10.1016/j.tsf.2013.11.131}, url = {https://www.sciencedirect.com/science/article/pii/S0040609013020063}, author = {Daniel C. Mayo and Claire E. Marvinney and Ephraim S. Bililign and James R. McBride and Richard R. Mu and Richard F. Haglund}, keywords = {ZnO excitons, Ag plasmons, Plasmon–exciton coupling, Resonant optical cavity, Core–shell nanowire, Photoluminescence}, abstract = {Plasmon–exciton coupling mechanisms were studied in ZnO/MgO core–shell nanowires by comparing nanowires with and without a silver-nanoparticle coating. By varying the thickness of the MgO layer, it was possible to examine the distance-dependent plasmonic effects and elucidate the mechanisms responsible for enhancing the band-edge photoluminescence. The core–shell nanowires exhibited optical cavity effects as a function of MgO thickness that dramatically enhanced the band-edge photoluminescence yields in the ultraviolet. Decorating the core–shell nanowires with Ag nanoparticles resulted in a two-fold plasmonic enhancement of the band-edge emission compared to the resonant cavity effects alone. In this case, an additional differential enhancement of the band-edge emission is observed for the first higher-order mode compared to the lowest-order mode. The visible luminescence is not significantly enhanced and does not follow the trend of enhanced photoluminescence observed for the band-edge decay.} } @article{Gadalla2019, abstract = {This paper attempts to describe an effective method for producing a composite of quantum dots consisting of CdSe (core) with CdS (shell). This nanoparticles composite was synthesized from modified organometallic precursors. The sizes of the nanoparticles were estimated from X-ray diffraction data using Debye-Scherer formula and compared with high resolution electron microscopy (HRTEM) and optical spectra. The shape of CdSe/CdS NPs is nearly spherical and revels that the CdS shell with the thickness ∼0.6 nm almost fully covers the CdSe core (higher contrast). Using UV-Vis spectroscopy, a systematic red shift in the absorption and emission spectra was observed after the deposition of CdS which confirms the shell growth over the CdSe core. In the CdSe/CdS core/shell structure, the holes are confined to the core, while the electrons are delocalized as a result of similar electron affinities of the core and the shell. The increased time of synthesis resulted in shell thickness increase. The observed properties of prepared CdSe/CdS QDs demonstrate the capability of the nanocomposite for using in the optoelectronics and photonics devices.}, author = {A. Gadalla and M. S.Abd El-Sadek and R. Hamood}, doi = {10.2478/msp-2019-0034}, issn = {2083134X}, issue = {2}, journal = {Materials Science- Poland}, keywords = {CdSe/CdS core/shell,HRTEM,X-rays,optical spectra,quantum dots}, month = {6}, pages = {149-157}, publisher = {Sciendo}, title = {Synthesis and optical properties of CdSe/CdS core/shell nanocrystals}, volume = {37}, year = {2019}, } @article{Zheng2020, abstract = {The electronic and optical properties of GaN/AlN core-shell nanowires (NWs) with different core-shell ratios are studied by means of density functional theory (DFT). The results show that as the GaN core structure increases (the AlN shell remains unchanged), the band gap of NWs decreases. In contrast, with the increase of AlN shell (GaN nucleus remains unchanged), the band gap almost remains unchanged. That is to say the adjustment capability of core-shell ratio for the band gap of GaN/AlN core-shell NWs with the same diameter of GaN core degenerates, and the band gap of which are mainly controlled by GaN core. Ga-N bond and Al-N bond show a strong ionic property because of the electronegativity of N is strong over Ga and Al. In addition, the calculated results of the real part 1(ω) and the imaginary parts 2(ω) with photon energy indicate that the storage capability and loss of the NWs to electric field energy are different with the content of AlN. The four structured NWs reflect electromagnetic waves as conductor in a high frequency ultraviolet range. The results are valuable for the design of GaN/AlN core-shell NWs optoelectronic nanodevices and the research of other core-shell NWs heterostructures.}, author = {Jiangshan Zheng and Enling Li and Jie Yan and Zhen Cui and Deming Ma}, doi = {10.1142/S0217984920500219}, issn = {02179849}, issue = {2}, journal = {Modern Physics Letters B}, keywords = {GaN/AlN core-shell structure,Nanowires,density functional theory,optical properties}, month = {1}, publisher = {World Scientific Publishing Co. Pte Ltd}, title = {Electronic and optical properties of GaN/AlN core-shell nanowires}, volume = {34}, year = {2020}, } @article{She2011, abstract = {CdSe/CdS core/shell nanorods can exhibit high photoluminescence quantum yields, but it is not yet clear what processes determine the yields and how they can be controlled. Moreover, the effective band alignment between the core and the shell affects quantum yield, but its nature is still under debate. We systematically studied quantum yields when the shell is excited as a function of both core size and shell volume. Using time-resolved photoluminescence decay measurements and transient-absorption spectroscopy, we found that quantum yields are determined by a balance between radiative and nonradiative recombination rates, and not by single-carrier trapping. The radiative recombination rate decreases as the nanorod volume increases, independent of the core size. The results indicate that high quantum yields can be obtained only by limiting the size of the shell and point to an effective quasi-type-II band alignment for all of the nanorods in this study. © 2011 American Chemical Society.}, author = {Chunxing She and Arnaud Demortière and Elena V. Shevchenko and Matthew Pelton}, doi = {10.1021/jz200510f}, issn = {19487185}, issue = {12}, journal = {Journal of Physical Chemistry Letters}, month = {6}, pages = {1469-1475}, title = {Using shape to control photoluminescence from CdSe/CdS core/shell nanorods}, volume = {2}, year = {2011}, } @article{Litvin2017, abstract = {This review is focused on new concepts and recent progress in the development of three major quantum dot (QD) based optoelectronic devices: photovoltaic cells, photodetectors and LEDs. In each application, we discuss recent champion devices with a range of architectures and discuss in detail the chronological steps taken to produce significant improvements in efficiency. We consider this relative to developments in colloidal quantum dots and their effects on these devices, covering alloyed, doped and core/shell QDs, quaternary Cu-Zn-In-S QDs, graphene and silicon QDs, and the wide range of highly promising NIR QDs. The diverse range of novel device designs is examined, including all-quantum dot devices, ternary hybrid compounds, plasmonic enhancements, and nano-heterojunction architectures. In addition, we analyse recent advances in charge transport layers, blocking layers, nanostructured photoanode fabrication and the importance of QD surface treatments. Throughout, we emphasise the use of hybrid composite materials including combinations of QDs with metal oxides, plasmonic nanoparticles, graphene and others. Finally, this review provides an analysis of prospects of these important selected quantum dot-based optoelectronic devices.}, author = {A. P. Litvin and I. V. Martynenko and F. Purcell-Milton and A. V. Baranov and A. V. Fedorov and Y. K. Gun'Ko}, doi = {10.1039/c7ta02076g}, issn = {20507496}, issue = {26}, journal = {Journal of Materials Chemistry A}, pages = {13252-13275}, publisher = {Royal Society of Chemistry}, title = {Colloidal quantum dots for optoelectronics}, volume = {5}, year = {2017}, } @INPROCEEDINGS{Hoang2006, author={Hoang, T.B. and Titova, L.V. and Jackson, H.E. and Smith, L.M. and Yarrison-Rice, J.M. and Kim, Y. and Joyce, H.J. and Jagadish, C.}, booktitle={2006 Sixth IEEE Conference on Nanotechnology}, title={Imaging and optical properties of single core-shell GaAs-AlGaAs nanowires}, year={2006}, volume={1}, number={}, pages={116-118}, abstract={We study the optical properties of a single core-shell GaAs-AlGaAs nanowire (grown by VLS method) using the technique of micro photoluminescence and spatially-resolved photoluminescence imaging. We observe large linear polarization anisotropy in emission and excitation of nanowires}, keywords={}, doi={10.1109/NANO.2006.247582}, ISSN={1944-9399}, month={July},} @article{Kagan2016, abstract = {The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices.We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials.}, author = {Cherie R. Kagan and Efrat Lifshitz and Edward H. Sargent and Dmitri V. Talapin}, doi = {10.1126/science.aac5523}, issn = {10959203}, issue = {6302}, journal = {Science}, month = {8}, publisher = {American Association for the Advancement of Science}, title = {Building devices from colloidal quantum dots}, volume = {353}, year = {2016}, } @article{Kria2020, abstract = {We provide a comprehensive computational investigation concerning the effects of confinement and temperature on the thermodynamic properties of cylindrical core/shell quantum dots with a large band offset. This model can also be applied to hollow cylindrical quantum dots or nanofibers. Within the framework of the effective mass approximation, we solve the Schrödinger equation analytically in two bands model, determining the energies of all excited states. Following Boltzmann–Gibbs distribution and introducing the canonical partition function, energy states are used to evaluate the thermodynamic properties: the mean energy, heat capacity, entropy, and Helmholtz free energy. Our numerical calculation shows that all thermodynamic properties depend on the temperature, the size of the dot, and the shell thickness. According to our numerical results, it is found that in the narrow shell case, the heat capacity shows a Schottky-like anomaly at low temperatures, but this effect disappears for small values of core radius. Another important conclusion, is that the determination of the Helmholtz free energy makes it possible to predict the thermodynamic stability of quantum dots. We also show that the competition between the temperature, the core dimension, and the shell thickness influences the thermodynamic stability. Despite the simplicity of our approach, our study can be considered as a useful information source and as an excellent qualitative indicator for understanding the thermodynamic properties of quantum dots.}, author = {M. Kria and K. Feddi and N. Aghoutane and M. El-Yadri and L. M. Pérez and D. Laroze and F. Dujardin and E. Feddi}, doi = {10.1016/j.physa.2020.125104}, issn = {03784371}, journal = {Physica A: Statistical Mechanics and its Applications}, keywords = {Core – shell,Entropy,Heat capacity,Helmholtz energy,Nanofiber}, month = {12}, publisher = {Elsevier B.V.}, title = {Thermodynamic properties of SnO2/GaAs core/shell nanofiber}, volume = {560}, year = {2020}, } @article{Jiang2018, abstract = {We have investigated the band structure and charge distributions of very tiny InAs/GaAs core/shell nanowires in wurtzite structure by using first principles calculations, which indicates that the electrons and holes are spatially localized at the GaAs-shell and InAs-core regions, respectively. In addition, the band gaps of the studied core/shell nanowire are close to the optimum band gap for a single-junction solar cell of about 1.5 eV. Furthermore, the band structure of the C2S2 nanowire (with two InAs layers and two GaAs layers) varies significantly with applied axial strain and the charge carriers keep separated when the applied strain is in the range of -2.6 to 3.9 percent, which is important for the application of solar cells. Our results indicate that InAs/GaAs core/shell nanowires should be a suitable candidate for solar cells.}, author = {Q. G. Jiang and Z. M. Ao}, doi = {10.1088/1757-899X/382/3/032056}, issn = {1757899X}, issue = {3}, journal = {IOP Conference Series: Materials Science and Engineering}, month = {7}, publisher = {Institute of Physics Publishing}, title = {Density Functional Theory Study on the Ultrathin InAs/GaAs Core/Shell Nanowires for Solar Cell Applications}, volume = {382}, year = {2018}, } @article{Mandal2015, abstract = {Using all-atom molecular dynamics (MD) simulations, we have studied the mechanical properties of ZnS/CdS core/shell nanowires. Our results show that the coating of a few-atomic-layer CdS shell on the ZnS nanowire leads to a significant change in the stiffness of the core/shell nanowires compared to the stiffness of pure ZnS nanowires. The binding energy between the core and shell region decreases due to the lattice mismatch at the core-shell interface. This reduction in binding energy plays an important role in determining the stiffness of a core/shell nanowire. We have also investigated the effects of the shell on the thermal conductivity and melting behavior of the nanowires.}, author = {Taraknath Mandal and Chandan Dasgupta and Prabal K. Maiti}, doi = {10.1103/PhysRevB.91.104107}, issn = {1550235X}, issue = {10}, journal = {Physical Review B - Condensed Matter and Materials Physics}, month = {3}, publisher = {American Physical Society}, title = {Tunable mechanical and thermal properties of ZnS/CdS core/shell nanowires}, volume = {91}, year = {2015}, } @article{Mantashian2021, abstract = {Linear and nonlinear optical properties in colloidal CdSe/CdS core/shell quantum dots with different sizes have been theoretically investigated in the framework of effective mass approxi-mation. The electron states in colloidal CdSe/CdS core/shell quantum dots have been calculated using the finite element method. The intraband linear and nonlinear absorption spectra have been calculated for colloidal CdSe/CdS core/shell quantum dots with different sizes. In addition, the dependences of the linear and nonlinear refractive index change on the incident light energy have been calculated. In the last section of the paper the second-and third-order harmonic generation spectra have been presented.}, author = {Grigor A. Mantashian and Nare A. Zaqaryan and Paytsar A. Mantashyan and Hayk A. Sarkisyan and Sotirios Baskoutas and David B. Hayrapetyan}, doi = {10.3390/atoms9040075}, issn = {22182004}, issue = {4}, journal = {Atoms}, keywords = {CdSe/CdS core/shell quantum dot,Intraband absorp-tion,Linear and nonlinear absorption,Refractive index change,Second-and third-order harmonic generation}, month = {12}, publisher = {MDPI}, title = {Linear and nonlinear optical absorption of cdse/cds core/shell quantum dots in the presence of donor impurity}, volume = {9}, year = {2021}, } @article{Loitsch2015, abstract = {Semiconductor quantum dots embedded in nanowires (NW-QDs) can be used as efficient sources of nonclassical light with ultrahigh brightness and indistinguishability, needed for photonic quantum information technologies. Although most NW-QDs studied so far focus on heterostructure-type QDs that provide an effective electronic confinement potential using chemically distinct regions with dissimilar electronic structure, homostructure NWs can localize excitons at crystal phase defects in leading to NW-QDs. Here, we optically investigate QD emitters embedded in GaAs-AlGaAs core-shell NWs, where the excitons are confined in an ultrathin-diameter NW core and localized along the axis of the NW core at wurtzite (WZ)/zincblende (ZB) crystal phase defects. Photoluminescence (PL)-excitation measurements performed on the QD-emission reveal sharp resonances arising from excited electronic states of the axial confinement potential. The QD-like nature of the emissive centers are suggested by the observation of a narrow PL line width, as low as ∼300 μeV, and confirmed by the observation of clear photon antibunching in autocorrelation measurements. Most interestingly, time-resolved PL measurements reveal a very short radiative lifetime <1 ns, indicative of a transition from a type-II to type-I band alignment of the WZ/ZB crystal interface in GaAs due to the strong quantum confinement in the ultrathin NW core.}, author = {Bernhard Loitsch and Julia Winnerl and Gianluca Grimaldi and Jakob Wierzbowski and Daniel Rudolph and Stefanie Morkötter and Markus Döblinger and Gerhard Abstreiter and Gregor Koblmüller and Jonathan J. Finley}, doi = {10.1021/acs.nanolett.5b03273}, issn = {15306992}, issue = {11}, journal = {Nano Letters}, keywords = {III-V,nanowire,photoluminescence,polytypism,quantum dot}, month = {11}, pages = {7544-7551}, publisher = {American Chemical Society}, title = {Crystal Phase Quantum Dots in the Ultrathin Core of GaAs-AlGaAs Core-Shell Nanowires}, volume = {15}, year = {2015}, } @article{Baskoutas2006, abstract = {The size-dependent band gap of semiconductor quantum dots is a well-known and widely studied quantum confinement effect. In order to understand the size-dependent band gap, different theoretical approaches have been adopted, including the effective-mass approximation with infinite or finite confinement potentials, the tight-binding method, the linear combination of atomic orbitals method, and the empirical pseudopotential method. In the present work we calculate the size-dependent band gap of colloidal quantum dots using a recently developed method that predicts accurately the eigenstates and eigenenergies of nanostructures by utilizing the adiabatic theorem of quantum mechanics. We have studied various semiconductor (CdS, CdSe, CdTe, PbSe, InP, and InAs) quantum dots in different matrices. The theoretical predictions are, in most cases, in good agreement with the corresponding experimental data. In addition, our results indicate that the height of the finite-depth well confining potential is independent of the specific semiconductor of the quantum dot and exclusively depends on the matrix energy-band gap by a simple linear relation. © 2006 American Institute of Physics.}, author = {Sotirios Baskoutas and Andreas F. Terzis}, doi = {10.1063/1.2158502}, issn = {00218979}, issue = {1}, journal = {Journal of Applied Physics}, title = {Size-dependent band gap of colloidal quantum dots}, volume = {99}, year = {2006}, } @article{Fickenscher2013, abstract = {The electronic properties of thin, nanometer scale GaAs quantum well tubes embedded inside the AlGaAs shell of a GaAs core-multishell nanowire are investigated using optical spectroscopies. Using numerical simulations to model cylindrically and hexagonally symmetric systems, we correlate these electronic properties with structural characterization by aberration-corrected scanning transmission electron microscopy of nanowire cross sections. These tubular quantum wells exhibit extremely high quantum efficiency and intense emission for extremely low submicrowatt excitation powers in both photoluminescence and photoluminescence excitation measurements. Numerical calculations of the confined eigenstates suggest that the electrons and holes in their ground states are confined to extremely localized one-dimensional filaments at the corners of the hexagonal structure which extend along the length of the nanowire. © 2013 American Chemical Society.}, author = {Melodie Fickenscher and Teng Shi and Howard E. Jackson and Leigh M. Smith and Jan M. Yarrison-Rice and Changlin Zheng and Peter Miller and Joanne Etheridge and Bryan M. Wong and Qiang Gao and Shriniwas Deshpande and Hark Hoe Tan and Chennupati Jagadish}, doi = {10.1021/nl304182j}, issn = {15306984}, issue = {3}, journal = {Nano Letters}, keywords = {Nanowire,excitation spectroscopy,modeling,quantum confinement}, month = {3}, pages = {1016-1022}, title = {Optical, structural, and numerical investigations of GaAs/AlGaAs core-multishell nanowire quantum well tubes}, volume = {13}, year = {2013}, } @article{Gu2011, abstract = {Optical reflection, transmission, and absorption in arrays of GaAs and GaAs/AlGaAs core-shell nanowires are studied using transfer matrix and photonic bandgap formalisms, analyzing the effects of size, geometry, height, packing density, and polarization. Energy dependence of the spectra demonstrates optical modes in the dielectric, similar to guided resonant modes, and also the air bands. Simulation of polarization dependence verifies higher absorption with the electric field along the wire axis. Higher absorption at much lower volume compared to thin film, combined with excellent charge transport, make core-shell nanowire arrays excellent candidates for optoelectronics applications. © 2011 American Institute of Physics.}, author = {Zongquan Gu and Paola Prete and Nicola Lovergine and Bahram Nabet}, doi = {10.1063/1.3555096}, issn = {00218979}, issue = {6}, journal = {Journal of Applied Physics}, month = {3}, title = {On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays}, volume = {109}, year = {2011}, } @article{Lu2019, abstract = {Nowadays, materials with a core-shell structure have been widely explored for applications in advanced batteries owing to their superb properties. Core-shell structures based on the electrode type, including anodes and cathodes, and the material compositions of the cores and shells have been summarized. In this review, we focus on core-shell materials for applications in advanced batteries such as LIBs, LSBs and SIBs. Firstly, a novel concept of aggregates of spherical core-shell architectures and their aggregates, linear core-shell architectures and their aggregates, sheet-like core-shell architectures and their aggregates and special core-shell architectures and their aggregates are involved. Secondly, the main material compositions of carbon/Si-based, carbon/metal-based, metal-based materials and organic-based composites are introduced along with the synthesis and electrochemical performances of core-shell nanostructured materials. Finally, the emerging challenges and prospects of core-shell materials are briefly discussed.}, author = {Wenjie Lu and Xiaotian Guo and Yuqing Luo and Qing Li and Rongmei Zhu and Huan Pang}, doi = {10.1016/j.cej.2018.08.132}, issn = {13858947}, journal = {Chemical Engineering Journal}, keywords = {Advanced battery,Core-shell,Material composition,Morphology}, month = {1}, pages = {208-237}, publisher = {Elsevier B.V.}, title = {Core-shell materials for advanced batteries}, volume = {355}, year = {2019}, } @article{Vasudevan2015, abstract = {Fluorescent quantum dots (QDs) are semiconducting nanocrystals (NCs) that find numerous applications in areas, such as bio labelling, sensors, lasers, light emitting diodes and medicine. Core-shell quantum dots were developed to improve the photoluminescence efficiency of single quantum dots. Capping their surface with organic ligands as well as their extraction into aqueous media enables their use in sensing applications. The current review highlights the importance and applications of core shell quantum dots as well as their surface modifications and applications in the field of medicine and as sensors for chemical and biochemical analysis.}, author = {D. Vasudevan and Rohit Ranganathan Gaddam and Adrian Trinchi and Ivan Cole}, doi = {10.1016/j.jallcom.2015.02.102}, issn = {09258388}, journal = {Journal of Alloys and Compounds}, keywords = {Chemical and biological analysis,Core shell quantum dots,Sensing,Surface modification}, month = {7}, pages = {395-404}, publisher = {Elsevier Ltd}, title = {Core-shell quantum dots: Properties and applications}, volume = {636}, year = {2015}, } @article{Yakimenko2022, abstract = {Quantum wires (QWs) and quantum point contacts (QPCs) have been realized in GaAs/AlGaAs heterostructures in which a two-dimensional electron gas resides at the interface between GaAs and AlGaAs layered semiconductors. The electron transport in these structures has previously been studied experimentally and theoretically, and a 0.7 conductance anomaly has been discovered. The present paper is motivated by experiments with a QW in shallow symmetric and asymmetric confinements that have shown additional conductance anomalies at zero magnetic field. The proposed device consists of a QPC that is formed by split gates and a top gate between two large electron reservoirs. This paper is focussed on the theoretical study of electron transport through a wide top-gated QPC in a low-density regime and is based on density functional theory. The electron-electron interaction and shallow confinement make the splitting of the conduction channel into two channels possible. Each of them becomes spin-polarized at certain split and top gates voltages and may contribute to conductance giving rise to additional conductance anomalies. For symmetrically loaded split gates two conduction channels contribute equally to conductance. For the case of asymmetrically applied voltage between split gates conductance anomalies may occur between values of 0.25(2e 2/h) and 0.7(2e 2/h) depending on the increased asymmetry in split gates voltages. This corresponds to different degrees of spin-polarization in the two conduction channels that contribute differently to conductance. In the case of a strong asymmetry in split gates voltages one channel of conduction is pinched off and just the one remaining channel contributes to conductance. We have found that on the perimeter of the anti-dot there are spin-polarized states. These states may also contribute to conductance if the radius of the anti-dot is small enough and tunneling between these states may occur. The spin-polarized states in the QPC with shallow confinement tuned by electric means may be used for the purposes of quantum technology.}, author = {Irina I. Yakimenko and Ivan P. Yakimenko}, doi = {10.1088/1361-648X/ac3f01}, issn = {1361648X}, issue = {10}, journal = {Journal of Physics Condensed Matter}, keywords = {conductance anomalies,electron transport,quantum wire,semiconductor heterostructure,two-dimensional electron gas}, month = {3}, pmid = {34852329}, publisher = {IOP Publishing Ltd}, title = {Electronic properties of semiconductor quantum wires for shallow symmetric and asymmetric confinements}, volume = {34}, year = {2022}, } @article{Evangelou2020, abstract = {We present a systematic study of the optical absorption coefficient (OAC) and refractive index change (RIC) for a symmetric semiconductor nanostructure. We derived the OAC and RIC following two approaches, one without approximations, besides the usual ones (rotating-wave approximation and application of a two-level model), and the other using an approximation keeping only the contribution of the linear and third-order nonlinear terms. In the derivation we consider properly the contribution of the population decay time and the dephasing time, which may be different to each other, in general, in semiconductor nanostructures, extending previous works. We also apply the derived formulae for the calculation of the OAC and RIC in a specific semiconductor quantum well with position-dependent mass and compared the results obtained from the derived formulae. We find that while for low light intensities the different formulae for OAC and RIC give similar results for higher light intensities only the formulae obtained without approximations can lead to correct physical results. We also present a critical intensity below which the different formulae for OAC and RIC give practically the same results. This critical intensity can be used for obtaining correct behavior for the OAC and RIC in any symmetric semiconductor nanostructure.}, author = {Sofia Evangelou}, doi = {10.1016/J.PHYSE.2020.114307}, issn = {1386-9477}, journal = {Physica E: Low-dimensional Systems and Nanostructures}, keywords = {Optical absorption coefficient,Position-dependent mass,Refractive index change,Semiconductor quantum dot,Semiconductor quantum well}, month = {10}, pages = {114307}, publisher = {North-Holland}, title = {Nonlinear optical absorption coefficient and refractive index change in symmetric semiconductor nanostructures: Comparison between different methods}, volume = {124}, year = {2020}, } @article{Kouhi2017, abstract = {In this paper, the effect of incident light intensity, relaxation time, core radius and shell thickness on linear, nonlinear, total optical absorption coefficients and refractive index changes in GaN/Al0.1Ga0.9N core-shell nanowire are theoretically investigated. The presented nanostructure is a cylindrical quantum wire including a shell around the cylinder core. By numerical solution of Schrödinger equation in the cylindrical coordinates with effective mass approximation, the optical absorption coefficients are calculated. The results show that the magnitude of optical absorption coefficients can be adjusted by varying the relaxation time. The positions of resonant peaks of optical absorption coefficients are redshifted by increase of core radius due to decrease of the energy difference between two energy levels. With increase of shell thickness initially, the resonance wavelength of absorption coefficient increases (redshift) and magnitude of absorption coefficient decreases. Then with more increases of the shell thickness, redshifting of resonance wavelength is stopped and magnitude of absorption coefficient is increased. There is a significant increase in the refractive index change with increase of relaxation time.}, author = {Mohammad Kouhi}, doi = {10.1142/S0217979217501648}, issn = {17936578}, issue = {23}, journal = {International Journal of Modern Physics B}, keywords = {Nonlinear,nanowire,optical absorption,refractive index change}, month = {9}, publisher = {World Scientific Publishing Co. Pte Ltd}, title = {Nonlinear optical absorption in the core shell nanowire}, volume = {31}, year = {2017}, } @article{Phuc2015, abstract = {In this paper, linear and nonlinear optical absorption spectrum in asymmetrical Gaussian potential quantum wells under the applied magnetic and electric fields are studied via investigating the phonon-assisted cyclotron resonance (PACR) effect. The results are calculated for GaAs and Ga1-xAlxAs materials. Our results show that the optical absorption behaviors and the half-width are significantly dependent on the height of the Gaussian potential, the well width, the magnetic field, and the temperature. It is also found that there is a clear monotonic behavior of the resonant peaks and the half-width as functions of the factors mentioned above in both one and two-photon absorption processes.}, author = {Huynh Vinh Phuc and Luong Van Tung and Pham Tuan Vinh and Le Dinh}, doi = {10.1016/J.SPMI.2014.11.024}, issn = {10963677}, journal = {Superlattices and Microstructures}, keywords = {Electric field,Gaussian potential,Half-width,Nonlinear optics,Phonon-assisted cyclotron resonance}, pages = {267-275}, publisher = {Academic Press}, title = {Nonlinear optical absorption via two-photon process in asymmetrical Gaussian potential quantum wells}, volume = {77}, year = {2015}, } @article{Tung2016, abstract = {The nonlinear optical absorption properties via two-photon process of an asymmetrical semi-parabolic quantum well (ASPQW) has been theoretically investigated. The analytical expression for the magneto-optical absorption coefficient (MOAC) is obtained by relating it to the transition probability for the absorption of photons. Meanwhile, the half width at half maximum (HWHM) of the resonant peaks is gained by the profile method. The numerical results are calculated for typical GaAs and GaAs/GaAlAs quantum wells. The obtained results show that MOAC and HWHM are strongly dependent on confinement frequency, magnetic field and temperature in both one- and two-photon processes. The increasing behavior of HWHM on temperature is generally in good accord with the previous reported ones, both theoretically and experimentally.}, author = {Luong Van Tung and Huynh Vinh Phuc}, doi = {10.1016/J.SPMI.2015.11.014}, issn = {10963677}, journal = {Superlattices and Microstructures}, keywords = {Magneto-optical properties,Nonlinear optics,Phonons,Transport properties}, month = {1}, pages = {288-295}, publisher = {Academic Press}, title = {Nonlinear optical absorption via two-photon process in asymmetrical semi-parabolic quantum wells}, volume = {89}, year = {2016}, } @article{Durmuslar2020, abstract = {A numerical investigation on the nonlinear optical rectification, second and third harmonic generation coefficients in asymmetric double n-type δ-doped GaAs quantum well is performed in order to identify the influence of non-resonant intense laser radiation, doping concentration and the change in well widths. The energy eigenvalues and the corresponding eigenfunctions are determined by using effective-mass and parabolic band approximations. The working analytical expressions for the optical coefficients are derived from the iterative solving of compact-density matrix description of dielectric susceptibility. The obtained results reveal that the position and amplitude of the nonlinear optical rectification, second and third harmonic generation coefficients can be altered by modifying the external field as well as the compositional and geometrical setups.}, author = {Aysevil Salman Durmuslar and Miguel Eduardo Mora-Ramos and Fatih Ungan}, doi = {10.1140/epjp/s13360-020-00465-x}, isbn = {1336002000465x}, journal = {Eur. Phys. J. Plus}, pages = {442}, title = {Nonlinear optical properties of n-type asymmetric double δ-doped quantum wells: role of high-frequency laser radiation, doping concentration and well width}, volume = {135}, url = {https://doi.org/10.1140/epjp/s13360-020-00465-x}, year = {2020}, } @article{Dakhlaoui2021, abstract = {In this work, we present a theoretical simulation of the impact of applied external fields and structural parameters on the total (linear plus nonlinear) optical absorption coefficient (TOAC) and total refractive relative index change coefficient (TRICs) in a het-erostructure based on symmetric and nonsymmetric triple Gaussian quantum wells. The asymmetricity of the heterostructure was introduced by adjusting the depths of central and left potential wells. At first, we have calculated the wavefunctions and the subband energy levels for the lowest bounded states confined within the structure by solving the Schrödinger equation within the framework of the effective mass approximation under the impact of electric and magnetic fields. Throughout our study, the matrix elements and occupation ratio factor, which control the evolution of TOACs and TRICs, were evaluated and commented. The obtained results show that an increase of the intensity of electric and magnetic field produces a red shift in the TOACs and TRICs. Furthermore, we find that by increasing the depth of the left-hand quantum well (V LW), the modification of the confining potential profile , which becomes asymmetric, leads to a blue-shift behavior of the TOACs and TRICs at first and then a red-shift. We believe that the present study opens the way to the design of new optoelectronic devices operating in large spectral emission.}, author = {H Dakhlaoui and I Altuntas and M E Mora-Ramos and F Ungan}, doi = {10.1140/epjp/s13360-021-01907-w}, isbn = {0123456789}, journal = {Eur. Phys. J. Plus}, pages = {894}, title = {Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters}, volume = {136}, url = {https://doi.org/10.1140/epjp/s13360-021-01907-w}, year = {2021}, } @article{Al2015, abstract = {The combined effects of electric and magnetic fields on the optical absorption coefficients and refractive index changes related to the intersubband transitions within the conduction band of asymmetric GaAs/Ga1-xAlxAs double inverse parabolic quantum wells are studied using the effective-mass approximation and the compact density-matrix approach. The results are presented as a function of the incident photon energy for the different values of the electromagnetic fields and the structure parameters such as quantum well width and the Al concentration at the well center. It is found that the optical absorption coefficients and the refractive index changes are strongly affected not only by the magnitudes of the electric and magnetic fields but also by the structure parameters of the system.}, author = {E. B. Al and F. Ungan and U. Yesilgul and E. Kasapoglu and H. Sari and I. Sökmen}, doi = {10.1016/J.OPTMAT.2015.06.048}, issn = {09253467}, journal = {Optical Materials}, keywords = {Double inverse parabolic quantum well,Electric and magnetic fields,Nonlinear optical properties}, pages = {1-6}, publisher = {Elsevier B.V.}, title = {Effects of applied electric and magnetic fields on the nonlinear optical properties of asymmetric GaAs/Ga1-xAlxAs double inverse parabolic quantum well}, volume = {47}, year = {2015}, } @article{Ungan2017, abstract = {In this present study, the effects of electric and magnetic fields on the nonlinear optical rec-tification and second-harmonic generation in a graded quantum well under intense laser field have been investigated theoretically. The energy eigenvalues and their corresponding eigenfunctions are obtained by solving Schrödinger equation within the framework of effective mass approximation. The analytic expressions for the optical properties are calculated by the compact-density-matrix approach and iterative method. The numerical results are presented for a typical GaAs/Ga1−xAlxAs quantum well. The results show that the nonlinear optical rectification and second-harmonic generation coefficients are considerably affected by the electromagnetic fields and intense laser field.}, author = {Fatih Ungan}, doi = {10.1140/epjb/e2016-70608-2}, isbn = {2016706082}, journal = {Eur. Phys. J. B}, pages = {12}, title = {Effects of applied electric and magnetic fields on the nonlinear optical rectification and second-harmonic generation in a graded quantum well under intense laser field}, volume = {90}, year = {2017}, } @article{Perez2022, abstract = {The optical properties for nano-structured semiconductor systems are of great importance nowadays, due to its possible implementation for the design of efficient optoelectronic devices. It is also well known that external fields can modify the electronic structure and induce changes the optical properties as well. In particular the asymmetric double quantum well structures are of paramount importance because its wide range of possible configurations and also because are experimentally feasible and well controlled, particularly AlxGa1-xAs/GaAs heterostructures. In this work we report a systematic study on second harmonic generation (SHG) for an asymmetric AlxGa1-xAs/GaAs double quantum well, as a function of non-resonant intense laser field and an (in-plane) magnetic field. We analyze the energy level behavior as well as the dipole matrix elements as a function of the above mentioned factors, that are important for the SHG, as we discus in this paper. We report a particular configuration that enhance the SHG signal, with and without intense laser field effect, as well as magnetic fields, that also can be uses to tune the SHG.}, author = {J. Perez-Gonzalez and J. G. Rojas-Brise˜no and F. M. Nava-Maldonado and A. Del Rio De Santiago and F. Ungan and H. Dakhlaoui and J. C. Martınez-Orozco}, doi = {10.31349/RevMexFis.68.050503}, issn = {0035001X}, issue = {5}, journal = {Revista Mexicana de Fisica}, keywords = {Double quantum wells,Intense laser field effect,Intraband transitions,Second harmonic generation}, month = {9}, publisher = {Sociedad Mexicana de Fisica}, title = {In plane magnetic field and intense laser field effects on second harmonic generation of asymmetric AlGaAs/GaAs double quantum well}, volume = {68}, year = {2022}, } @article{Hien2021, abstract = {In this theoretical study, we consider in detail the influence of the confining potential on the magneto-optical absorption linewidth (MOALW) of a quantum well for both intersubband and intrasubband magneto-optical transitions. The projection operator method and the profile technique are used to calculate respectively the MO-absorption power and MOALW in both the semiparabolic, parabolic, and the rectangular confining potential quantum wells. The results obtained from the present study show that (i) the MOALW as functions of the structural, material, and external parameters include the confining potential frequency, the well width, the electron density, the temperature, and the magnetic field, as well as Landau level number; (ii) the larger contribution from intrasubband transitions to electron-phonon scattering compared with intersubband transitions for both three type of above confining potentials; (iii) the dependence of the MOALW on the above parameters is found to be the strongest in case of the square confining potential quantum well while it is the weakest in case of the semiparabolic confining potential quantum well for intersubband magneto-optical transitions, however, that for the parabolic confining potential is similar to the rectangular confining potential for intrasubband magneto-optical transitions. Our present calculations accord well with previous experimental studies.}, author = {Nguyen Dinh Hien}, doi = {10.1016/J.SPMI.2021.107068}, issn = {10963677}, journal = {Superlattices and Microstructures}, keywords = {Confining potential,Intersubband transition,Intrasubband transition,Linewidth,Quantum wells}, month = {12}, publisher = {Academic Press}, title = {Influence of the confining potential on the linewidth of a quantum well}, volume = {160}, year = {2021}, } @article{Phuc2016, abstract = {The linear and nonlinear optical absorption via one and two-photon processes in the finite symmetric parabolic quantum well (FSPQW) under the applied magnetic field have been studied numerically for typical GaAs/GaxAl1−xAs. The analytical expression of the magneto-optical absorption coefficient (MOAC) is obtained by relating it to the transition probability for the absorption of photons. The effects of the magnetic field, the temperature, and the well width on MOAC and full-width at half-maximum (FWHM) are investigated. Results reveal that MOAC and FWHM are monotonic functions of these factors in both one and two-photon absorption processes. Obtained results also show that the magneto-optical properties of FSPQW can be controlled by changing these parameters. This suggests a new capacity for magneto-optical device applications.}, author = {Huynh Vinh Phuc and Doan Quoc Khoa and Nguyen Van Hieu and Nguyen Ngoc Hieu}, doi = {10.1016/J.IJLEO.2016.08.070}, issn = {00304026}, issue = {22}, journal = {Optik}, keywords = {Magneto-optical properties,Transport properties,Two-photon process}, month = {11}, pages = {10519-10526}, publisher = {Elsevier GmbH}, title = {Linear and nonlinear magneto-optical absorption in parabolic quantum well}, volume = {127}, year = {2016}, } @article{Altun2022, abstract = {In this paper, we have studied the electronic and optical properties of GaAs/AlxGa1-xAs superlattice with periodically increased well width. Under effective mass approximation, the finite element method is used to obtain wavefunctions and corresponding energy eigenvalues for several electric field (F) and magnetic field (B) values. We have shown that the increasing well width has a major effect on the localization of the first two energy states. The direction of the applied electric field shifts the localization position of the probability density of electrons to the left and right. For B = 0 (according to the parameters used), F = 5 kV/cm (especially for the difference between the first two energy levels (E12)) is a critical value. While the E12 value decreases in the range from −30 kV/cm to 5 kV/cm, it increases for the 5 < F < 30 kV/cm range. This behavior causes a red or blue shift in the optical spectrum. Also, F = −30 kV/cm causes more change in the structure than F = 30 kV/cm. In addition, the localization of the electrons is observed in the center of the superlattice under applied magnetic fields. The optical absorption coefficients and the refractive index changes are affected by applied F and B intensities. We can say that the electro-optical features of the superlattice have changed significantly with the combined effect of F and B values. This is desired for semiconductor optical device applications to have stable performances.}, author = {D. Altun and O. Ozturk and B. O. Alaydin and E. Ozturk}, doi = {10.1016/j.micrna.2022.207225}, issn = {27730123}, journal = {Micro and Nanostructures}, keywords = {Electric field,GaAs/AlxGa1-xAs,Linear and nonlinear optical properties,Magnetic field,Superlattice}, month = {6}, publisher = {Elsevier Ltd}, title = {Linear and nonlinear optical properties of a superlattice with periodically increased well width under electric and magnetic fields}, volume = {166}, year = {2022}, } @article{Zeiri2019, abstract = {In this paper, we have investigated the optical properties of CdSe/ZnS core shell quantum dot. The carriers wave functions and eigenenergies have been obtained by solving the three dimensional Schrödinger equation under the frame work of the effective-mass envelope-function theory. Then we have calculated the nonlinear susceptibilities associated with intersubbandtransitions in the conduction band for CdS/ZnS spherical quantum dots. In addition, we have also investigated theoretically the third order susceptibilities for quadratic electro-optic effects as a function of the core, shell radii, pump photo-energy and time relaxation. Numerical calculations revealed that susceptibilities have one peak (resonance) and depend on the parameters already mentioned. Indeed, by increasing the width of shell, the peaks of susceptibilities will be red shifted and the intensities will in fact increase as functions of pump photon energy. The obtained results can give a new degree of freedom in optoelectronic device applications.}, author = {N. Zeiri and A. Naifar and S. Abdi-Ben Nasrallah and M. Said}, doi = {10.1016/j.ijleo.2018.09.050}, issn = {00304026}, journal = {Optik}, keywords = {Core/shell nanostructures,Quantum dots,Third order nonlinear susceptibility}, month = {1}, pages = {162-167}, publisher = {Elsevier GmbH}, title = {Third nonlinear optical susceptibility of CdS/ZnS core-shell spherical quantum dots for optoelectronic devices}, volume = {176}, year = {2019}, } @article{multiphysics1998introduction, title={Introduction to COMSOL multiphysics{\textregistered}}, author={Multiphysics, COMSOL}, journal={COMSOL Multiphysics, Burlington, MA, accessed Feb}, volume={9}, pages={2018}, year={1998} } @misc{comsol, author={COMSOL Inc.}, title={COMSOL}, year={2020}, url={http://www.comsol.com/products/multiphysics/}, } @article{Fonseka2019, abstract = {Quantum structures designed using nanowires as a basis are excellent candidates to achieve novel design architectures. Here, triplets of quantum wires (QWRs) that form at the core-shell interface of GaAsP-GaAsP nanowires are reported. Their formation, on only three of the six vertices of the hexagonal nanowire, is governed by the three-fold symmetry of the cubic crystal on the (111) plane. In twinned nanowires, the QWRs are segmented, to alternating vertices, forming quantum dots (QDs). Simulations confirm the possibility of QWR and QD-like behavior from the respective regions. Optical measurements confirm the presence of two different types of quantum emitters in the twinned individual nanowires. The possibility to control the relative formation of QWRs or QDs, and resulting emission wavelengths of the QDs, by controlling the twinning of the nanowire core, opens up new possibilities for designing nanowire devices.}, author = {H. Aruni Fonseka and Anton V. Velichko and Yunyan Zhang and James A. Gott and George D. Davis and Richard Beanland and Huiyun Liu and David J. Mowbray and Ana M. Sanchez}, doi = {10.1021/acs.nanolett.9b01673}, issn = {15306992}, issue = {6}, journal = {Nano Letters}, keywords = {GaAsP nanowires,Nanowire quantum wires,nanowire quantum dots}, month = {6}, pages = {4158-4165}, pmid = {31141668}, publisher = {American Chemical Society}, title = {Self-Formed Quantum Wires and Dots in GaAsP-GaAsP Core-Shell Nanowires}, volume = {19}, year = {2019}, } @article{Vinasco2019, author = {J. A. Vinasco and A. Radu and E. Niculescu and M. E. Mora-Ramos and E. Feddi and V. Tulupenko and R. L. Restrepo and E. Kasapoglu and A. L. Morales and C. A. Duque}, doi = {10.1038/s41598-018-38114-0}, issn = {2045-2322}, issue = {1}, journal = {Scientific Reports}, month = {12}, pages = {1427}, title = {Electronic states in GaAs-(Al,Ga)As eccentric quantum rings under nonresonant intense laser and magnetic fields}, volume = {9}, url = {http://www.nature.com/articles/s41598-018-38114-0}, year = {2019}, } @article{Vinasco2018, author = {Juan Alejandro Vinasco and Mauricio Alejandro Londoño and Ricardo León Restrepo and Miguel Eduardo Mora-Ramos and El Mustapha Feddi and Adrian Radu and Esin Kasapoglu and Alvaro Luis Morales and Carlos Alberto Duque}, doi = {10.1002/pssb.201700470}, issn = {03701972}, issue = {4}, journal = {physica status solidi (b)}, month = {4}, pages = {1700470}, title = {Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots}, volume = {255}, url = {http://doi.wiley.com/10.1002/pssb.201700470}, year = {2018}, } @article{Ahn1987, title = {Intersubband optical absorption in a quantum well with an applied electric field}, author = {Ahn, D. and Chuang, S. L.}, journal = {Phys. Rev. B}, volume = {35}, issue = {8}, pages = {4149--4151}, numpages = {0}, year = {1987}, month = {Mar}, publisher = {American Physical Society}, doi = {10.1103/PhysRevB.35.4149}, url = {https://link.aps.org/doi/10.1103/PhysRevB.35.4149} } @article{Tsung1993, title = {Band-offset ratio dependence on the effective-mass Hamiltonian based on a modified profile of the GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As quantum well}, author = {Li, Tsung L. and Kuhn, Kelin J.}, journal = {Phys. Rev. B}, volume = {47}, issue = {19}, pages = {12760--12770}, numpages = {0}, year = {1993}, month = {May}, publisher = {American Physical Society}, doi = {10.1103/PhysRevB.47.12760}, url = {https://link.aps.org/doi/10.1103/PhysRevB.47.12760} } @article{BenDaniel1966, title = {Space-Charge Effects on Electron Tunneling}, author = {BenDaniel, D. J. and Duke, C. B.}, journal = {Phys. Rev.}, volume = {152}, issue = {2}, pages = {683--692}, numpages = {0}, year = {1966}, month = {Dec}, publisher = {American Physical Society}, doi = {10.1103/PhysRev.152.683}, url = {https://link.aps.org/doi/10.1103/PhysRev.152.683} }