PreprintArticleVersion 1Preserved in Portico This version is not peer-reviewed
Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component
Version 1
: Received: 24 April 2022 / Approved: 5 May 2022 / Online: 5 May 2022 (08:42:15 CEST)
How to cite:
Prokopenko, N.; Budyakov, P.; Bugakova, A. Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component. Preprints2022, 2022050026. https://doi.org/10.20944/preprints202205.0026.v1
Prokopenko, N.; Budyakov, P.; Bugakova, A. Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component. Preprints 2022, 2022050026. https://doi.org/10.20944/preprints202205.0026.v1
Prokopenko, N.; Budyakov, P.; Bugakova, A. Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component. Preprints2022, 2022050026. https://doi.org/10.20944/preprints202205.0026.v1
APA Style
Prokopenko, N., Budyakov, P., & Bugakova, A. (2022). Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component. Preprints. https://doi.org/10.20944/preprints202205.0026.v1
Chicago/Turabian Style
Prokopenko, N., Petr Budyakov and Anna Bugakova. 2022 "Research and Comparative Modeling of the Si, GaAs and GaN JFET/CMOS Buffer Amplifiers for Sallen-Key LPF Design Problems with A Low Offset Voltage's Systematic Component" Preprints. https://doi.org/10.20944/preprints202205.0026.v1
Abstract
The authors of the article performed computer simulation of buffer amplifiers (BA), which have medium and extremely small values of the offset voltage's systematic component (Voff), for different technological processes (Si, GaAs and GaN). The proposed control units are distinguished by a small number of elements and allow operation in the range of low and high temperatures. The variants of circuitry implementation of control units based on GaAs, GaN depletion-mode CMOS and JFET technological processes are considered. The results of the comparative modeling showed that the basic circuit of the BA on two field-effect transistors, when implemented on various modifications of GaN MOS and depletion-mode MOS transistors, provides sufficiently low values of the offset voltage's systematic component (less than 2 μV). The proposed BAs are designed for use in the structure of the Sallen-Key low-pass filter (LPF) when they are implemented both on mid-frequency Si CJFET and on GaAs microwave transistors. Low values of the LPF Voff have a positive effect on the effective capacity of the ADC. An example of switching on a BA in the JFET OpAmp structure based on the depletion-mode MOS input stage and a “folded” cascode, which, with 100% negative feedback, can be used in the Sallen-Key LPF, is considered. Computer simulation of the JFET/MOS OpAmp showed that the OpAmp has an open-loop voltage gain of 76-85dB, and its Voff is within 7µV in the temperature range from -60°C to +120°C. The presented circuitry of buffer amplifiers is intended, first of all, for the tasks of designing precision Sallen-Key low-pass filter (low-pass filter, high-pass filter, PF, RF).
Keywords
analog circuit design; buffer amplifiers; offset voltage's systematic component; voltage followers; operational amplifiers; depletion-mode; СMOS; JFET; Si; GaAs; GaN
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
