ARTICLE
|
doi:10.20944/preprints202404.1301.v1
Subject:
Physical Sciences,
Applied Physics
Keywords:
AlGaN/GaN high electron mobility transistor; micro-raman spectroscopy; power electronic; packaged device; wafer-level
Online: 22 April 2024 (12:11:17 CEST)
ARTICLE
|
doi:10.20944/preprints202402.0577.v1
Online: 9 February 2024 (11:27:34 CET)
ARTICLE
|
doi:10.20944/preprints202308.0419.v1
Online: 4 August 2023 (11:20:58 CEST)
ARTICLE
|
doi:10.20944/preprints202307.0804.v1
Subject:
Engineering,
Electrical And Electronic Engineering
Keywords:
AlGaN/GaN HEMT device; CCM; DCM; dynamic on‐resistance; dynamic power loss
Online: 12 July 2023 (09:35:11 CEST)
REVIEW
|
doi:10.20944/preprints202306.1422.v1
Subject:
Physical Sciences,
Optics And Photonics
Keywords:
Ultraviolet C emission; electron-beam pumped ultraviolet (UV)C emitters; AlGaN group III-nitrides; low dimensional structures; 2D quantum wells
Online: 20 June 2023 (09:54:31 CEST)
REVIEW
|
doi:10.20944/preprints202302.0249.v2
Subject:
Physical Sciences,
Optics And Photonics
Keywords:
AlGaN; tunnel junction; light-emitting diode; deep-ultraviolet; MgZnO
Online: 17 February 2023 (07:14:52 CET)
REVIEW
|
doi:10.20944/preprints201709.0013.v1
Subject:
Physical Sciences,
Applied Physics
Keywords:
AlN; AlGaN; deep ultraviolet; light-emitting diodes; MOCVD
Online: 5 September 2017 (04:55:57 CEST)