Version 1
: Received: 12 July 2023 / Approved: 12 July 2023 / Online: 12 July 2023 (09:35:11 CEST)
How to cite:
Lei, J.; Liu, Y.; Zhang, W.; Yang, Z.; Chen, Y.; Wang, R.; Chen, D.; Xu, L.; Yu, J. An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices. Preprints2023, 2023070804. https://doi.org/10.20944/preprints202307.0804.v1
Lei, J.; Liu, Y.; Zhang, W.; Yang, Z.; Chen, Y.; Wang, R.; Chen, D.; Xu, L.; Yu, J. An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices. Preprints 2023, 2023070804. https://doi.org/10.20944/preprints202307.0804.v1
Lei, J.; Liu, Y.; Zhang, W.; Yang, Z.; Chen, Y.; Wang, R.; Chen, D.; Xu, L.; Yu, J. An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices. Preprints2023, 2023070804. https://doi.org/10.20944/preprints202307.0804.v1
APA Style
Lei, J., Liu, Y., Zhang, W., Yang, Z., Chen, Y., Wang, R., Chen, D., Xu, L., & Yu, J. (2023). An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices. Preprints. https://doi.org/10.20944/preprints202307.0804.v1
Chicago/Turabian Style
Lei, J., Liang Xu and Jing Yu. 2023 "An Analytical Model of Dynamic Power Losses in eGaN HEMT Power Devices" Preprints. https://doi.org/10.20944/preprints202307.0804.v1
Abstract
In this work, we present an analytical model of dynamic power losses for enhancement-mode AlGaN/GaN high-electron-mobility transistor power devices (eGaN HEMTs).
To build this new model, the dynamic on-resistance (Rdson) is first accurately extracted by our ex-traction circuit based on a double-diode isolation (DDI) method for a high operating frequency up to 1 MHz and a large drain voltage up to 600 V, thus the unique problem of an increase in the dynamic Rdson is presented. Then the impact of the current operation mode on the on/off transi-tion time is evaluated by a dual-pulse-current-mode test (DPCT) which including a discontinu-ous conduction mode (DCM) and a continuous conduction mode (CCM), thus the transition time is revised for different current mode. Afterward the discrepancy between the drain current and the real channel current is qualitative investigated by an external shunt capacitance (ESC) meth-od, thus the losses due to device parasitic capacitance are also taken into account. After these improvements, the dynamic model will be more compatible for eGaN HEMTs.
Finally, the dynamic power losses calculated by this model are verified to be in good agreement with experimental results. Based on this model, we propose a superior solution with qua-si-resonant mode (QRM) to achieve lossless switching and accelerate switching speed.
Keywords
AlGaN/GaN HEMT device; CCM; DCM; dynamic on‐resistance; dynamic power loss
Subject
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
