Incremental control strategies provide undeniable advantages for controlling Uncrewed Aerial Vehicles (UAVs) due to their reduced model dependency and accurate tracking capacities. This is of particular relevance for hybrid UAVs, specially for tail-sitters, which perform complex manoeuvres when transitioning to and from aerodynamic flight. This paper summarizes the research undertaken in the application of the Incremental Nonlinear Dynamics Inversion (INDI) and Incremental Backstepping (IBKS) to a small tail-sitter UAV. After the application of these control strategies in a simulated scenario, the implementation in a Micro-Controller Unit was validated in a Hardware-in-the-Loop scenario. Following such validation, indoor experimental trials were undertaken in order to evaluate the capacity of these controllers to stabilize and control the real aircraft. The stabilization in the flight trials was successfully implemented and allow to conclude that both INDI and IBKS are control strategies suited to control a tail-sitter in vertical flight, providing accurate tracking capabilities under smooth actuation. Furthermore, it was found that the IBKS is significantly more computationally demanding than the INDI, although having a global proof of stability that is of interest in aircraft control.

This paper discusses the computer-aided (CAD) classification between Hepatocellular Carcinoma (HCC), i.e., the most common type of liver cancer, and Liver Abscess, based on ultrasound image texture features and Support Vector Machine (SVM) classifier. Among 79 cases of liver diseases, with 44 cases of HCC and 35 cases of liver abscess, this research extracts 96 features of Gray-Level Co-occurrence Matrix (GLCM) and Gray-Level Run-Length Matrix (GLRLM) from the region of interests (ROIs) in ultrasound images. Three feature selection models, i) Sequential Forward Selection, ii) Sequential Backward Selection, and iii) F-score, are adopted to determine the identification of these liver diseases. Finally, the developed system can classify HCC and liver abscess by SVM with the accuracy of 88.875%. The proposed methods can provide diagnostic assistance while distinguishing two kinds of liver diseases by using a CAD system.

In this paper, we study the effect of parasitic channel on electrical characteristics and power consumptions of vertically stacked gate-all-around (GAA) silicon nanosheet (NS) MOSFETs of the bulk and silicon-on-insulator (SOI) substrates. Through deliberate control of the bottom parasitic channel coverage, we systematically assess its influence on DC, AC, and RF characteristics including power consumption. The observed findings highlight a significant differentiation among the bottom parasitic channels: GAA (i.e., control sample with 100% coverage), omega-shaped gate NS (70% and 80% coverages), and FinFET (60% coverage). Compared with the device with a 60% coverage channel, the device with a 100% coverage channel possesses 3520% and 8030% normalized leakage current improvement for both NFET and PFET under the bulk substrate, respectively. Compared with bulk-substrate devices, the SOI-substrate devices further significantly improve the leakage current. Due to enhanced off-state current leakages in the 100% covered bulk-substrate device, the static power demonstrates a notable improvement (about 98.1%), compared to 60% covered devices. Hence, the utilization of a 60% covered channel will result in a degradation of both device and circuit performance. The observation of GAA NS MOSFET indicates that an increase in the bottom parasitic channel coverage ratio leads to a positive impact on power consumption and leakage currents. The examination presented here is useful in the fabrication of stacked GAA NS MOSFETs.

In this paper, we proposed a novel saddle type FinFET (S-FinFET) to effectively solve problems occurring under the capacitor node of dynamic random-access memory (DRAM) cell and showed how its structure was superior to conventional S-FinFETs in terms of short channel effect (SCE), subthreshold slope (SS), and gate-induced drain leakage (GIDL). The proposed FinFET exhibited 4 times lower Ioff than modified S-FinFET called RFinFET with more improved DIBL characteristics while minimizing Ion reduction compared to RFinFET. Our results also confirmed that the proposed device showed improved DIBL and Ioff characteristics as gate channel length decreased.