Piller, C.-T.; Raud, J.; Aarik, L.; Jõgi, I.; Talviste, R.; Aarik, J. Study of Mid-Pressure Ar Radiofrequency Plasma Used in Plasma-Enhanced Atomic Layer Deposition of α-Al2O3. Processes2024, 12, 612.
Piller, C.-T.; Raud, J.; Aarik, L.; Jõgi, I.; Talviste, R.; Aarik, J. Study of Mid-Pressure Ar Radiofrequency Plasma Used in Plasma-Enhanced Atomic Layer Deposition of α-Al2O3. Processes 2024, 12, 612.
Piller, C.-T.; Raud, J.; Aarik, L.; Jõgi, I.; Talviste, R.; Aarik, J. Study of Mid-Pressure Ar Radiofrequency Plasma Used in Plasma-Enhanced Atomic Layer Deposition of α-Al2O3. Processes2024, 12, 612.
Piller, C.-T.; Raud, J.; Aarik, L.; Jõgi, I.; Talviste, R.; Aarik, J. Study of Mid-Pressure Ar Radiofrequency Plasma Used in Plasma-Enhanced Atomic Layer Deposition of α-Al2O3. Processes 2024, 12, 612.
Abstract
This study investigated the characteristics of radio-frequency middle-pressure argon plasma used in the atomic layer deposition (ALD) of Al2O3 films. Based on the electrical characteristics, that is current, voltage, and phase shift between them, and stability of plasma plume, the optimum plasma power, allowing reliable switching on the plasma for any step of an ALD cycle, was determined. Spectral measurements were performed to determine the gas temperature and reactive species that could be important in the ALD process. The density of metastable argon atoms was estimated using tunable laser absorption spectroscopy. It was concluded that plasma heating of substrates did not affect film growth and proposed that the crystallization-enhancing effect of plasma was due to the action of OH radicals, produced in the plasma.
Chemistry and Materials Science, Surfaces, Coatings and Films
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