Plasma Chemical Production Technology of AlN as High Thermal Conductivity Material

A technology for obtaining nanosized aluminum nitride powder by plasma-chemical synthesis is presented. Nitrogen gas (N2), melamine (C3H6N6) and ammonia (NH3) were used as a source of nitrogen. Aluminum powder of different fractions was used as a source of aluminum. The influence of the nitrogen source, the height of the injector, and the input power of the plasma equipment on the synthesized aluminum nitride powder is shown. The resulting aluminum nitride powder has a size d90=60 nm. The parameters of aluminum nitride synthesis did not in any way affect the granulometric composition of the synthesized powder materials. It was found that, due to the high binding energy, the nitrogen molecule (N2) reacts poorly with aluminum powder particles, as a result a mixture of nitrogen and ammonia gases was used in a ratio of 70/30 (mol.%) for aluminum nitride synthesis.