Complementary Characterization of Polycrystalline Copper-Nitride Films by UV-MIR (0.2-40 µm) Ellipsometry and FIB-SEM Microscopy

Emilio Márquez; Eduardo Blanco; J. Manuel Mánuel; Manuel Ballester; Marcos García-Gurrea; Susana Fernández; María Isabel Rordríguez-Tapiador; Florian Willomitzer; Aggelos K. Katsaggelos

doi:10.20944/preprints202308.1389.v1

How to cite: Márquez, E.; Blanco, E.; Mánuel, J.M.; Ballester, M.; García-Gurrea, M.; Fernández, S.; Rordríguez-Tapiador, M.I.; Willomitzer, F.; Katsaggelos, A.K. Complementary Characterization of Polycrystalline Copper-Nitride Films by UV-MIR (0.2-40 µm) Ellipsometry and FIB-SEM Microscopy. Preprints 2023, 2023081389. https://doi.org/10.20944/preprints202308.1389.v1 Márquez, E.; Blanco, E.; Mánuel, J.M.; Ballester, M.; García-Gurrea, M.; Fernández, S.; Rordríguez-Tapiador, M.I.; Willomitzer, F.; Katsaggelos, A.K. Complementary Characterization of Polycrystalline Copper-Nitride Films by UV-MIR (0.2-40 µm) Ellipsometry and FIB-SEM Microscopy. Preprints 2023, 2023081389. https://doi.org/10.20944/preprints202308.1389.v1

Abstract

Copper-nitride (Cu3N) material is attracting much attention as a potential next-generation thin-film solar-light absorber. In this work, polycrystalline Cu3N thin films were prepared using reactive-RF-magnetron sputtering, at room temperature,onto glass and silicon substrates. The optical properties of the Cu3N thin layers were studied by spectroscopic ellipsometry and transmission, to achieve a low-cost absorber material to replace conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by FIB-SEM microscopy and FTIR spectroscopy.

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Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Complementary Characterization of Polycrystalline Copper-Nitride Films by UV-MIR (0.2-40 µm) Ellipsometry and FIB-SEM Microscopy

Abstract

Keywords

Subject

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