Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Laser Patterned Alumina Mask and Mask-less Dry Etch of Si for Light Trapping

Version 1 : Received: 29 December 2022 / Approved: 30 December 2022 / Online: 30 December 2022 (10:14:28 CET)

How to cite: Maksimovic, J.; Mu, H.; Smith, D.; Katkus, T.; Vaičiulis, M.; Aleksiejūnas, R.; Seniutinas, G.; Ng, S.H.; Juodkazis, S. Laser Patterned Alumina Mask and Mask-less Dry Etch of Si for Light Trapping. Preprints 2022, 2022120583. https://doi.org/10.20944/preprints202212.0583.v1 Maksimovic, J.; Mu, H.; Smith, D.; Katkus, T.; Vaičiulis, M.; Aleksiejūnas, R.; Seniutinas, G.; Ng, S.H.; Juodkazis, S. Laser Patterned Alumina Mask and Mask-less Dry Etch of Si for Light Trapping. Preprints 2022, 2022120583. https://doi.org/10.20944/preprints202212.0583.v1

Abstract

Ultra-short 230 fs laser pulses of 515 nm wavelength were tightly focused into 700 nm focal spots and utilised in opening ~ 0.4 − 1 μm holes in alumina Al2O3 etch masks with 20-50 nm thickness. Such dielectric masks simplify fabrication of photonic crystal (PhC) light trapping patterns for the above-Lambertian performance of high efficiency solar cells. Conditions of laser ablation of transparent etch masks and effects sub-surface Si modifications were revealed by plasma etch- ing, numerical modeling, and minority carrier lifetime measurements. Mask-less patterning of Si is proposed using fs-laser direct writing for dry plasma etch of Si.

Keywords

light trapping; Si solar cells; ablation; dry etch; Lambertian limit

Subject

Chemistry and Materials Science, Nanotechnology

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