Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Numerical Investigation of Cu2O as Hole Transport Layer for High-Efficiency CIGS Solar Cell

Version 1 : Received: 21 October 2021 / Approved: 22 October 2021 / Online: 22 October 2021 (10:20:37 CEST)

How to cite: Yousuf, M.H.; Saeed, F.; Tauqeer, H.A. Numerical Investigation of Cu2O as Hole Transport Layer for High-Efficiency CIGS Solar Cell. Preprints 2021, 2021100326 (doi: 10.20944/preprints202110.0326.v1). Yousuf, M.H.; Saeed, F.; Tauqeer, H.A. Numerical Investigation of Cu2O as Hole Transport Layer for High-Efficiency CIGS Solar Cell. Preprints 2021, 2021100326 (doi: 10.20944/preprints202110.0326.v1).

Abstract

Copper indium gallium selenide (CIGS) is an inexpensive material that has the potential to dominate the next-generation photovoltaic (PV) industry. Here we detail computational investigation of CIGS solar cell with encouragement of adopting cuprous dioxide (Cu2O) as a Hole Transport Layer (HTL) for efficient fabricated CIGS solar cells. Although Cu2O as a HTL has been studied earlier for perovskite and other organic/inorganic solar cell yet no study has been detailed on potential application of Cu2O for CIGS solar cells. With the proposed architecture, recombination losses are fairly reduced at the back contact and contribute to enhanced photo-current generation. With the introduction of Cu2O, the overall cell efficiency is increased to 26.63%. The wide-band of Cu2O pulls holes from the CIGS absorber which allows smoother extraction of holes with experiencing lesser resistance. Further, it was also inferred that, HTL also improves the quantum efficiency (QE) for photons with large wavelengths thus increases the cell operating spectrum.

Keywords

Cu2O; CIGS; HTL; Buffer Layer; SCAPS

Subject

ENGINEERING, Electrical & Electronic Engineering

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