Preprint Article Version 1 This version is not peer-reviewed

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

Version 1 : Received: 14 March 2018 / Approved: 16 March 2018 / Online: 16 March 2018 (04:58:13 CET)

How to cite: Kaymak, N.; Efil, E.; Seven, E.; Tataroğlu, A.; Bilge Ocak, S.; Orhan, E.Ö. Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode. Preprints 2018, 2018030125 (doi: 10.20944/preprints201803.0125.v1). Kaymak, N.; Efil, E.; Seven, E.; Tataroğlu, A.; Bilge Ocak, S.; Orhan, E.Ö. Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode. Preprints 2018, 2018030125 (doi: 10.20944/preprints201803.0125.v1).

Abstract

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

Subject Areas

atomic layer deposition; ZnO; ideality factor; series resistance; Schottky photodetector

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