Preprint Article Version 1 This version not peer reviewed

Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder

Version 1 : Received: 26 April 2017 / Approved: 27 April 2017 / Online: 27 April 2017 (02:48:19 CEST)

A peer-reviewed article of this Preprint also exists.

Jiang, C.-W.; Ni, I.-C.; Hsieh, Y.-L.; Tzeng, S.-D.; Wu, C.-S.; Kuo, W. Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder. Materials 2017, 10, 645. Jiang, C.-W.; Ni, I.-C.; Hsieh, Y.-L.; Tzeng, S.-D.; Wu, C.-S.; Kuo, W. Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder. Materials 2017, 10, 645.

Journal reference: Materials 2017, 10, 645
DOI: 10.3390/ma10060645

Abstract

The Anderson insulating states in Au nanoparticle assembly are identified and studied under the application of magnetic fields and gate voltages. When the inter-nanoparticle tunneling resistance is smaller than the quantum resistance, the system showing zero Mott gap can be insulating at very low temperature. In contrast to Mott insulators, Anderson insulators exhibit great negative magnetoresistance, inferring charge de-localization in a strong magnetic field. When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to interplay of disorder and quantum interference at low temperatures.

Subject Areas

nanoparticles; metal-insulator transition; Anderson localization

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