Backgrounds Linear association has widely been assumed for prediction of aging-related fractional anisotropy (FA) decline in white matter of the brain. While useful for testing significance of the aging effect, it fails to identify a threshold age before and after which the age-FA association changes. Identification of such a threshold is often of clinical interest for timely intervention. Methods We employed a sigmoidal growth function to test a threshold effect in age triggering onset of cerebral decline in 21 white matter tracts, and compared its fitting performance to those of linear, and power regression. The study sample was a normal healthy cohort of 106 participants with ages in mid-life ranging from 18 to 60 years. Results Of the 21 white matter tracts analyzed, the posterior thalamic radiation showed better fit with sigmoidal curve model, compared to a linear or power regression. The estimated threshold age in years (95% confidence interval) were 47.2 (44.1-48.4). Conclusion While available evidence regarding the presence of a specific age threshold for cerebral decline in mid-life based on FA was limited, the posterior thalamic radiation exhibited a threshold age of 47.2. Beyond this age point, we observed a significant change in the FA risk pattern.

Memristors are state-of-the-art, nano-sized, two-terminal, passive electronic elements with very good switching and memory characteristics. Owing to their very low power usage and a good compatibility to the existing CMOS ultra-high-density integrated circuits and chips, they are po-tentially applicable in artificial and spiking neural networks, memory arrays, and many other de-vices and circuits for artificial intelligence. In this paper, a complete electronic realization of ana-log circuit model of modified neural net with memristor-based synapses and transfer function with memristors and MOS transistors in LTSPICE is offered. Each synaptic weight is realized by only one memristor, providing enormously reduced circuit complexity. The summing and scaling implementation is founded on op-amps and memristors. The logarithmic-sigmoidal activation function is based on a simple scheme with MOS transistors and memristors. The functioning of the suggested memristor-based neural network for pulse input signals is evaluated both analytically in MATLAB-SIMULINK and in LTSPICE environment. The obtained results are compared one to another and are successfully verified. The realized memristor-based neural network is an im-portant step towards the forthcoming design of complex memristor-based neural networks for ar-tificial intelligence, for implementation in very high-density integrated circuits and chips.