ARTICLE | doi:10.20944/preprints202301.0372.v1
Subject: Computer Science And Mathematics, Information Systems Keywords: Blockchian; IoT; CoAP; MQTT; REST: Traceability
Online: 20 January 2023 (10:29:38 CET)
IoT is a computational perception that defines a situation, where smart objects are interconnected to the internet/ network. In the last few years, IoT objects have increased in all sectors/ fields and use in all domains of our lives. As the number of devices increases, the privacy of data becomes an important issue. To deal with this issue different techniques have been used by researchers in this field. Unfortunately, these methods have less traceability, privacy of data, and accountability. This paper aims to design a blockchain-based network architecture for Traceability, Data privacy, and Accountability (TDA). Technologies of blockchain are known as a distributed ledger of transactions record, which record the life span information with a timestamp. The major features of blockchain are persistency, decentralization, and audibility. These features help to decrease the budget and increase efficiency. Moreover, to strengthen the TDA architecture, this paper also discusses the performance of the proposed architecture.
ARTICLE | doi:10.20944/preprints202306.1702.v1
Subject: Engineering, Electrical And Electronic Engineering Keywords: Total ionizing dose effect; FDSOI devices; Inverter
Online: 25 June 2023 (03:17:23 CEST)
The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on-off function of devices. At present, most of the irradiation research on the circuit level is focused on the single event effect, and the research on the total ionizing dose effect is very little. Therefore, this study mainly analyzes the influence of TID effects on a CMOS inverter circuit based on 22 nm FDSOI transistors. First, we constructed and calibrated an N-type FDSOI metal-oxide semiconductor (NMOS) structure and P-type FDSOI metal-oxide semiconductor (PMOS) structure. The transfer characteristics and trapped charge distribution of these devices were studied under different irradiation doses. Next, we studied the TID effect on an inverter circuit composed of these two MOS transistors. The simulation results show that when the radiation dose is 400 krad (Si), the logic threshold drift of the inverter is approximately 0.052 V. These results help further investigate the impact on integrated circuits in the irradiation environment.