This paper is an extended version of a previously reported conference paper regarding low power design for NAND Flash. As the number of bits per NAND Flash die increases with cost scaling, IO datapath speed increases to minimize the page access time with scaled CMOS in IOs. The power supply for IO buffers, namely VDDQ, has decreased from 3V to 1.2V, accordingly. In this paper, how a reduction in VDDQ can contribute to power reduction in BL path is discussed and validated. Conventionally, BL voltage of about 0.5V has been supplied from a supply voltage source (VDD) of 3V. BL path power can be reduced by a factor of VDDQ to VDD when BL voltage is supplied from VDDQ. To maintain a sense margin at sense amplifiers, the supply source for BLs is switched from VDDQ to VDD before sensing. As a result, power reduction and equivalent sense margin can be realized at the same time. The overhead of implementing this operation is an increase in BL access time of about 2% for switching the power supply from VDDQ to VDD and an increase in die size of about 0.01% for adding the switching circuit, both of which are not significant in comparison with a significant power reduction in BL path power of NAND die of about 60%. The BL path was designed in 180nm CMOS to validate the design. When the cost for powering SSD becomes quite significant especially for data center, an additional lower voltage supply such as 0.8V dedicated to BL charging for read and program verify operations may be the best option for the future.

This paper proposes a circuit model of Cross-Coupled CMOS AC – DC Charge Pump (XC – CP) operating in subthreshold region. The aim is improving the efficiency to design XC – CPs with variety of specifications, e.g., input and output voltages and AC input frequency. First, it is shown that the output resistance (Ro) of XC – CP is much higher than those of CPs with single diodes (SD – CP) and ultra-low-power diodes (ULPD – CP) as charge transfer switches (CTSs). Second, the reason behind the above feature of XC – CP is identified by a simple model that the gate-to-source voltages of CTS MOSFETs are independent of the output voltage of the CP. Third, high but finite Ro of XC – CP is explainable with a more accurate model that includes the dependence of the saturation current of MOSFETs operating in subthreshold region on the drain-to-source voltage which is a function of the output voltage of CP. The model was in good agreement with measured and simulated results of XC – , SD – and ULPD – CPs fabricated in 250 nm CMOS.