preprints.org > engineering > electrical and electronic engineering > doi: 10.20944/preprints202311.1225.v1

Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Version 1 : Received: 19 November 2023 / Approved: 20 November 2023 / Online: 21 November 2023 (10:29:23 CET)

This paper proposes a circuit model of Cross-Coupled CMOS AC – DC Charge Pump (XC – CP) operating in subthreshold region. The aim is improving the efficiency to design XC – CPs with variety of specifications, e.g., input and output voltages and AC input frequency. First, it is shown that the output resistance (Ro) of XC – CP is much higher than those of CPs with single diodes (SD – CP) and ultra-low-power diodes (ULPD – CP) as charge transfer switches (CTSs). Second, the reason behind the above feature of XC – CP is identified by a simple model that the gate-to-source voltages of CTS MOSFETs are independent of the output voltage of the CP. Third, high but finite Ro of XC – CP is explainable with a more accurate model that includes the dependence of the saturation current of MOSFETs operating in subthreshold region on the drain-to-source voltage which is a function of the output voltage of CP. The model was in good agreement with measured and simulated results of XC – , SD – and ULPD – CPs fabricated in 250 nm CMOS.

AC–DC; RF–DC; charge pump; rectenna; wireless power transfer; IoT; energy harvesting

Engineering, Electrical and Electronic Engineering

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