In order to improve the charge collection efficiency, we simulated and experimentally tested the doping structure of the electron multiplication layer in EBCMOS. In this paper, we simulate the charge collection efficiency of EBCMOS under different doping methods by modeling the collisional scattering of electrons with solid atoms in semiconductor materials and combining the transport trajectories of electrons in the electron multiplication layer, the simulation results indicate that using a layered doping structure to reduce the thickness of the index heavily doped layer can effectively optimize the electric field distribution in the electron multiplier layer and reduce the recombination rate of electrons. The optimized doping structure has a significant effect on improving charge collection efficiency. Based on the simulation results, doped samples were prepared and tested. The test results showed that the charge collection efficiency obtained under the condition of a P-type silicon substrate thickness of 7μm and an index heavily doped layer thickness of 1μm was 72.65%, reducing the thickness of the index heavily doped layer to 0.1μm, the charge collection efficiency obtained can reach 86.27%, which proves that reducing the thickness of the index heavily doped layer can effectively improve the charge collection efficiency of EBCMOS devices.

In order to further clarify the growth-promoting effect of non-core Metarhizium spp. M. marquandii on plants, M. marquandii SGSF043, which was obtained from the pre-screening in the laboratory, was selected as a test strain, and the effects of the fungus fermentation broth during the stabilization period of the growth of this strain on the growth and growth of maize seeds were investigated by using fermentation broth as a submerged seed. germination, seedling growth, and inter-root soil enzyme activity of seedlings. The results are as follows: In the seed germination test, M. marquandii SGSF043 fermentation liquid had a certain inhibitory effect on the germination of maize seeds, and the 10-times dilution of the fermentation liquid significantly promoted the seed germination, and the effect was the best; After the germination test, the growth of maize germ was promoted by the treatment groups of 10 times and 1,000 times diluent; In the field plot experiment, the 100-fold dilution had the best growth promotion effect, which could promote the growth of cabbage seedlings and increase the seedling biomass. The results show that M. marquandii SGSF043 has the potential to promote the growth of maize and improve the soil environment, which provides a theoretical basis for the research and application of M. marquandii in farmland.

The development of good conductivity p-type β-Ga2O3 is critical to realize its devices and applications. The nitrogen-doped p-type β-Ga2O3 films with enhanced conductivity characteristics were prepared through the thermal oxidation of GaN in the N2O atmosphere. Further measurements were performed on the oxidized films at 1000, 1050, and 1100 °C to have insight into the underlying mechanism of the thermally activated transformation process. The room temperature photoluminescence (PL) spectra demonstrated a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of ~5.0 eV. The normalized X-ray diffraction (XRD), the high-resolution transmission electron microscopy (HRTEM), and the selected area electron diffraction (SAED) patterns were used to confirm the characteristic of polycrystalline and anisotropic growth. Then, the effects of the oxidation temperature on the amount of incorporated nitrogen were analyzed using secondary ion mass spectrometry (SIMS). Moreover, the ionization energy of the acceptor of films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using the temperature-dependent Hall test results. The results showed that nitrogen doping was the main contributor to p-type electrical properties. The activation energy of the polycrystalline β-Ga2O3 prepared through thermal oxidation of GaN in the N2O atmosphere was estimated to be 147.175 kJ·mol-1 using the Arrhenius plot, which was considerably lower than that of both dry and wet oxidations of GaN in O2 ambient, thus confirming the efficiency of thermal oxidation of GaN in N2O.

Thin film transistors (TFTs) using In-Ga-Zn Oxide (IGZO) as active layer and the gate insulator was treated with NH3 plasma and N2O plasma, respectively, which is fabricated on flexible PI substrate in this work. The performance of IGZO TFTs with different plasma species and treatment time are investigated and compared. The experiment results show that the plasma species and treatment time play an important role in the threshold voltage, field-effect mobility, Ion/Ioff ratio, sub-threshold swing (SS) and bias stress stability of the devices. The TFT with a 10 seconds NH3 plasma treatment shows the best performance; specifically, threshold voltage of 0.34 V, field-effect mobility of 15.97 cm2/Vs, Ion/Ioff ratio of 6.33×107, and sub-threshold swing of 0.36 V/dec. The proposed flexible IGZO-TFTs in this paper can be used as driving devices in the next-generation flexible displays.

The porous structure is an important three-dimensional morphological feature of the peripheral nerve guidance conduit (NGC), which permits infiltration of cells, nutrients, and molecular signals, and the discharge of metabolic waste. Porous structures with precisely customised pore sizes, porosities, and connectivities were used to construct fully permeable, semi-permeable, and asymmetric peripheral NGCs to replace traditional nerve autografts in treatment of long-segment peripheral nerve injury. In this review, the features of porous structures and classification of NGCs based on these characteristics are discussed. Common methods for constructing 3D porous NGCs in current research are described, as well as the pore characteristics and the parameters used to tune the pores. The effects of the porous structure on the physical properties of NGCs including biodegradation, mechanical performance, and permeability were analysed. Pore structure affects the biological behaviour of Schwann cells, macrophages, fibroblasts, and vascular endothelial cells during peripheral nerve regeneration. Construction of ideal porous structures is a significant advancement in the regeneration of peripheral nerve tissue engineering materials. The purpose of this review is to generalise, summarise, and analyse the preparation methods for porous NGCs and their biological functions in promoting peripheral nerve regeneration to guide development of medical nerve repair materials.