Silicon carbide (SiC) nanowires possess unique one-dimensional structural features, excellent mechanical strength, thermal stability and wide bandgap properties, showing great potential in high-temperature electronics, catalysis, sensing and composite reinforcement. Nevertheless, pristine SiC nanowires suffer from inert surface activity, weak interfacial compatibility and limited optoelectronic and catalytic performance. Surface coating and heterojunction engineering are effective strategies to address these deficiencies. This review systematically summarizes the synthesis routes of pristine SiC nanowires, including carbothermal reduction, chemical vapor deposition, template-assisted growth and molten salt synthesis, as well as their morphological regulation, physicochemical properties and inherent limitations. Meanwhile, typical coating methods such as wet chemical, hydrothermal, CVD and PIP are elaborated, and the influences of coating thickness, uniformity, adhesion and lattice/thermal compatibility on performance are summarized. The classification and interfacial charge mechanism of Type II, Z-scheme and Schottky heterojunctions are discussed, and the advances of coated SiC nanowires in photodetection, photocatalysis, gas sensing, electromagnetic shielding and energy storage are reviewed. Current challenges including coating stability, scalable preparation and integration bottlenecks are pointed out, and future research directions focusing on interface control, multifunctional integration and AI-assisted material design are prospected.