Bi, C.; Wu, T.; Shao, J.; Jing, P.; Xu, H.; Xu, J.; Guo, W.; Liu, Y.; Zhan, D. Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment. Nanomaterials2024, 14, 750.
Bi, C.; Wu, T.; Shao, J.; Jing, P.; Xu, H.; Xu, J.; Guo, W.; Liu, Y.; Zhan, D. Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment. Nanomaterials 2024, 14, 750.
Bi, C.; Wu, T.; Shao, J.; Jing, P.; Xu, H.; Xu, J.; Guo, W.; Liu, Y.; Zhan, D. Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment. Nanomaterials2024, 14, 750.
Bi, C.; Wu, T.; Shao, J.; Jing, P.; Xu, H.; Xu, J.; Guo, W.; Liu, Y.; Zhan, D. Evolution of the Electronic Properties of Tellurium Crystals with Plasma Irradiation Treatment. Nanomaterials 2024, 14, 750.
Abstract
Tellurium exhibits exceptional intrinsic electronic properties. However, investigations into the modulation of tellurium's electronic properties through physical modification are notably scarce. Here, we present a comprehensive study focused on the evolution of the electronic properties of tellurium crystal flakes under plasma irradiation treatment by employing conductive atomic force microscopy and Raman spectroscopy. The plasma-treated tellurium experienced a process of defect generation through lattice broken. Prior to the degradation of electronic transport performance due to plasma irradiation treatment, a remarkable observation emerged: in the low-energy region of hydrogen plasma-treated tellurium, a notable enhancement in conductivity was unexpectedly detected. The mechanism underlying this enhancement in electronic transport performance was thoroughly elucidated by comparing it with the electronic structure induced by argon plasma irradiation. This study not only fundamentally uncovers the effects of plasma irradiation on tellurium crystal flakes, but also unearths an unprecedented trend of enhanced electronic transport performance at low irradiation energies when utilizing hydrogen plasma. This abnormal trend bears significant implications for guiding the prospective application of tellurium-based 2D materials in the realm of electronic devices.
Keywords
tellurium crystal flake; plasma irradiation; tunnelling current; conductive atomic force microscopy (CAFM); band gap
Subject
Chemistry and Materials Science, Materials Science and Technology
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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