Miyata, N. Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications. Electronics2024, 13, 726.
Miyata, N. Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications. Electronics 2024, 13, 726.
Miyata, N. Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications. Electronics2024, 13, 726.
Miyata, N. Nonlinear Dynamics in HfO2/SiO2-Based Interface Dipole Modulation Field-Effect Transistors for Synaptic Applications. Electronics 2024, 13, 726.
Abstract
In the pursuit of energy-efficient spiking neural network (SNN) hardware, synaptic devices lev-eraging emerging memory technologies hold significant promise. This study investigates the ap-plication of the recently proposed HfO2/SiO2-based interface dipole modulation (IDM) memory for synaptic spike timing-dependent plasticity (STDP) learning. Firstly, through pulse measure-ments of IDM metal-oxide-semiconductor (MOS) capacitors, we demonstrate that IDM exhibits an inherently nonlinear and near-symmetric response. Secondly, we discuss the drain current re-sponse of a field-effect transistor (FET) incorporating a multi-stack IDM structure, revealing its nonlinear and asymmetric pulse response, and suggest that the degree of the asymmetry depends on the modulation current ratio. Thirdly, to emulate synaptic STDP behavior, we implement dou-ble-pulse-controlled drain current modulation of IDMFET using a simple bipolar rectangular pulse. Additionally, we propose a double-pulse-controlled synaptic depression that is valuable for optimizing STDP-based unsupervised learning. Integrating the pulse response characteristics of IDMFETs into a two-layer SNN system for synaptic weight updates, we assess training and classification performance on handwritten digits. Our results demonstrate that ID-MFET-based synaptic devices can achieve classification accuracy comparable to previously re-ported simulation-based results.
Engineering, Electrical and Electronic Engineering
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
