Submitted:
01 October 2023
Posted:
13 October 2023
You are already at the latest version
Abstract
Keywords:
1. Introduction
2. Fabrications
2.1. Photolithography
2.1.1. Metal (Au, Pt) IDA
2.1.2. Carbon IDA
2.1.3. Other IDA
2.2. Other methods
2.4. Chapter summary
3. Application
3.1. Application based on redox cycling
3.1.1. Neurotransmitters detection
| detector | detection method | detection result | Ref |
|---|---|---|---|
| Au IDA(width: 2 μm, gap: 2 μm) | high performance liquid chromatography | DA detection limit: 100 pM | 46 |
| ITO-Au IDA(width: 10 μm, gap: 5 μm) | cyclic voltammetry | the sensitivity of AA and UA were 6% and 5% that of DA. | 70 |
| C IDA(width: 2 μm, gap: 2 μm) | Liquid chromatography with microporous columns | DA detection limit: 5.0 fg DOPAC detection limit: 9.6 fg |
3 |
| C IDA (width: 2 μm, gap: 2 μm) | liquid chromatography | DA detection limit: 5 fg (32 amol) | 78 |
| C IDA(width: 650 nm, gap:2.35 μm) | cyclic voltammetry | DA detection limit: 10 μM | 57 |
| C IDA(width: 3 μm, gap: 2 μm) | cyclic voltammetry | DA detection limit: 10 nM | 79 |
3.1.2. Biological protein detection
3.1.3. Ion detection
3.1.4. Others
3.2. Application based on IDA electrodes resistance and impedance variation
3.2.1. Gas sensing
3.2.2. pressure sensing
3.2.3. Humility sensing
3.2.4. Biological sensing
3.3. Application based on IDA electrodes capacitance variation
3.4. Devices based on the special structure of IDA
3.4.1. Capacitors
3.4.2. Photodetector
3.4.3. Nanogenerators
4. Conclusion
Acknowledgments
References
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| Electrode materials/Substrate | Photoresist | Size | Time | Ref |
|---|---|---|---|---|
| Pt/ (SiO2 /Si) substrate | MP1400-27 (shipley) | Width: 3 μm Gap: 2 μm |
1990 | 4 |
| Au/ glass plates (27 mm×10 mm) | MP1400-27 (shipley) | Width: 2 μm Gap: 2 μm |
2000 | 43 |
| Pt/glass substrate | unknown | Width: 5 μm Gap: 5 μm |
1997 | 10 |
| Au/cyclic olefin copolymer wafer | polymethylmethacrylate (PMMA, MicroChem Corp., MA, USA) | Width: 200 nm Gap: 500 nm |
2007 | 44 |
| Pt/ (SiO2 /Si) substrate | Shipley 1813 photoresist (Newton, MA) | Width: 2.4 μm Gap: 1.6 μm |
2003 | 45 |
| (Ti-Pt)/ a glass slide (Matsunami Glass Ind. Ltd., Japan) | SU-8 3025 (MicroChem Co., USA) | Width: 16 μm Gap: 14 μm |
2014 | 46 |
| Pt/ (SiO2 /Si) substrate | MP1400-27 (Shiplay) | Width: 3~10 μm Gap: 2~5 μm |
1988 | 47 |
| Pt/ insulating borosilicate glass | Unknown | Width: 3.5 μm Gap: 2.5 μm |
1987 | 48 |
| Pt/ glass substrate | Unknown | Width: 5 μm Gap: 5 μm |
1995 | 49 |
| (Au-Pd)/ glass substrate | SU-8 | Width: 10 μm Gap: 50 μm |
2013 | 50 |
| Pt/ glass substrate | SAL601(Shipley Co.) | Width: 2 μm Gap: 2 μm |
1993 | 51 |
| Pt/ Si substrate | Futerrex, NR7 1500PY | Width: 3.7 μm Gap: 2.4 μm |
2004 | 29 |
| Pt/ (SiO2 /Si) substrate | Unknown | Width: 3.2 μm Gap: 0.8 μm |
1994 | 52 |
| Pt/ Barium borosilicate glass Substrates (Coming 7059) | Shipley 1470 | Width: 3.5 μm Gap: 2.5 μm |
1986 | 53 |
| Pt/ (SiO2 /Si) substrate | Shipley SAL601 | Width: 1~2 μm Gap: 300 nm~1 μm |
1995 | 54 |
| Au/ a semi-insulating GaAs substrate | Unknown | Width: 10,20,30,40 μm Gap: 5,10,15,20μm |
2014 | 55 |
| Photoresist or pyrolysis materials | Substrate | Size | Time | Ref |
|---|---|---|---|---|
| SU-8 | SiO2 /Si substrate | Width: 0.75 μm Gap: 0.85 μm Height: 0.22 μm |
2014 | 8 |
| 3,4,9,10-perylenetetracarboxylic dianhydride | SiO2 /Si substrate | Width: 2 μm Gap: 2 μm |
1995 | 3 |
| SU-8 | SiO2 /Si substrate | Width: 300 nm Thickness: 340 nm |
2010 | 59 |
| 3,4,9,10-perylenetetracarboxylic dianhydride | Quartz chips | Width: 2.5 μm Gap: 1.3 μm |
2000 | 60 |
| NANOTM SU-8 25 and SU-8 100 (MicroChem Corp.) | SiO2 /Si substrate | Width: ~100 μm The post diameters: 53 to 63 μm The average of carbon posts height: ~130 μm |
2011 | 61 |
| FH-SP, NTT-AT, Japan | quartz substrate | Width: 15.0 μm Gap: 5.1 μm Height: 0.01 μm |
2014 | 13 |
| SU-8 | SiO2 /Si substrate | Width: 20 μm Gap: 100 μm |
2008 | 62 |
| OiR897-101, Olin Corp., Norwalk, CT | SiO2 /Si substrate | Width: 50 μm Gap: 10 μm |
2002 | 63 |
| SU-8 | SiO2 /Si substrate | Height of carbon posts: 80 to 280 μm | 2004 | 64 |
| AZ 1500 (Hoechst, D) | SiO2 /Si substrate | Width: 2 μm Gap: 2 μm |
1996 | 5 |
| AZ4330 (Hoechst Celanese, Somerville, NJ) |
SiO2 /Si substrate | Width: ~950 μm Gap: ~88 μm |
2000 | 65 |
| Unknown | Si/Si3N4 wafers. | Width: 2.5 μm Gap: 1.5 μm |
1996 | 66 |
| SU-8 | SiO2 /Si substrate | Width: 1.5 μm Gap: 1.5 μm |
2013 | 57 |
| THB-530, JSR, Japan | Glass plate | Width: 2 μm Gap: 2 μm |
2005 | 67 |
| Electrode materials/Substrate | Photoresist | Size | Time | Ref |
|---|---|---|---|---|
| Indium tin oxide (ITO)/glass | AZ4620, Clariant, USA | Width: 5 μm Gap: 10 μm |
2014 | 73 |
| Poly(1,8-diaminonaphthalene)/functionalized multi-walled carbon nanotubes (PDAN/CNT)/ (SiO2 /Si) | AZ5214E | The final diameter: 500 μm |
2011 | 28 |
| Au-TiO2/ (SiO2 /Si) | Unknown | Width: 500 μm Gap: 25 μm |
2017 | 74 |
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