Review
Version 1
Preserved in Portico This version is not peer-reviewed
4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review
Version 1
: Received: 19 January 2022 / Approved: 20 January 2022 / Online: 20 January 2022 (08:38:21 CET)
A peer-reviewed article of this Preprint also exists.
Capan, I. 4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review. Electronics 2022, 11, 532. Capan, I. 4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review. Electronics 2022, 11, 532.
Abstract
In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. Main achievements are highlighted, and main challenges are discussed.
Keywords
Schottky barrier diodes; 4H-SiC; radiation; detection
Subject
Chemistry and Materials Science, Applied Chemistry
Copyright: This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
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