Preprint Article Version 1 Preserved in Portico This version is not peer-reviewed

Structural Origin of Magnetotransport Properties in APCVD Deposited Single and Bi-Layer Tin Oxide Thin Films

Version 1 : Received: 7 October 2020 / Approved: 8 October 2020 / Online: 8 October 2020 (20:53:21 CEST)
Version 2 : Received: 4 June 2021 / Approved: 8 June 2021 / Online: 8 June 2021 (13:55:21 CEST)

A peer-reviewed article of this Preprint also exists.

Juraić, K.; Gracin, D.; Čulo, M.; Rapljenović, Ž.; Plaisier, J.R.; Hodzic, A.; Siketić, Z.; Pavić, L.; Bohač, M. Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films. Materials 2020, 13, 5182. Juraić, K.; Gracin, D.; Čulo, M.; Rapljenović, Ž.; Plaisier, J.R.; Hodzic, A.; Siketić, Z.; Pavić, L.; Bohač, M. Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films. Materials 2020, 13, 5182.

Journal reference: Materials 2020, 13, 5182
DOI: 10.3390/ma13225182

Abstract

Tin oxide (SnO2) thin films, undoped single-layer and fluorine doped / undoped bilayer were deposited by Atmospheric Pressure Chemical Vapour Deposition (APCVD) at soda-lime glass substrate at two different temperatures (590°C and 610°C). Transport properties examined by impedance spectroscopy, DC resistivity, Hall effect and magnetoresistance measurements are correlated with structural properties examined by Scanning Electron Microscopy, Grazing Incidence X-ray Diffraction (GIXRD) and Time-of-flight Elastic Recoil Detection Analysis (TOF-ERDA). Results suggest that charge transport in the obtained samples is dominated by scattering at neutral impurities and can be correlated with preferred orientation (texture coefficient) presented in prepared samples.

Subject Areas

tin oxide; thin films; atmospheric pressure chemical vapour deposition; transport properties; magnetoresistance; impedance spectroscopy; charge carrier mobility

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