Working Paper Article Version 1 This version is not peer-reviewed

High Quality GeSn Layer with Sn Composition up to 7% Grown by Low Temperature Magnetron Sputtering for Optoelectronic Application

Version 1 : Received: 24 July 2019 / Approved: 25 July 2019 / Online: 25 July 2019 (10:29:19 CEST)

How to cite: Yang, J.; Hu, H.; Miao, Y.; Dong, L.; Wang, B.; Wang, W.; Su, H.; Xuan, R.; Zhang, H. High Quality GeSn Layer with Sn Composition up to 7% Grown by Low Temperature Magnetron Sputtering for Optoelectronic Application. Preprints 2019, 2019070288 Yang, J.; Hu, H.; Miao, Y.; Dong, L.; Wang, B.; Wang, W.; Su, H.; Xuan, R.; Zhang, H. High Quality GeSn Layer with Sn Composition up to 7% Grown by Low Temperature Magnetron Sputtering for Optoelectronic Application. Preprints 2019, 2019070288

Abstract

In this paper, we have used magnetron sputtering to grow the high-quality GeSn layer on Ge (100) with Sn compositin up to 7%. The crystallinity of the GeSn layer is pretty good, and the strain relaxation degree of the GeSn layer is evaluated to be approximately 50%. The root mean square (RMS) value is 0.8 nm, and the averaged TDDs in the GeSn layer is 8.7×109 cm-2, which is obtained from the rocking curve of GeSn layer along (004) plane. PL measurement result shows the significant optical emission from the deposited high-quality GeSn layer, which also means that magnetron sputtering is an optional way to achieve the higher Sn composition GeSn luminescent material. To verify whether our deposited GeSn can used for optoelectronic devices, we fabricate the simple vertical p-i-n diode, and the room temperature current-voltage (I-V) characteristic was obtained. This result paves the way for future sputtered-GeSn optimization, which is critical for the optoelectronic application.

Subject Areas

GeSn layer; averaged TDD; magnetron sputtering; p-i-n diode

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