Version 1
: Received: 8 February 2019 / Approved: 11 February 2019 / Online: 11 February 2019 (16:35:58 CET)
How to cite:
Wu, C.; Yen, S. Multiple Transitions in Half-Ring Chains with Varying Linewidth. Preprints2019, 2019020095. https://doi.org/10.20944/preprints201902.0095.v1
Wu, C.; Yen, S. Multiple Transitions in Half-Ring Chains with Varying Linewidth. Preprints 2019, 2019020095. https://doi.org/10.20944/preprints201902.0095.v1
Wu, C.; Yen, S. Multiple Transitions in Half-Ring Chains with Varying Linewidth. Preprints2019, 2019020095. https://doi.org/10.20944/preprints201902.0095.v1
APA Style
Wu, C., & Yen, S. (2019). Multiple Transitions in Half-Ring Chains with Varying Linewidth. Preprints. https://doi.org/10.20944/preprints201902.0095.v1
Chicago/Turabian Style
Wu, C. and Shiow-Kang Yen. 2019 "Multiple Transitions in Half-Ring Chains with Varying Linewidth" Preprints. https://doi.org/10.20944/preprints201902.0095.v1
Abstract
Six Half-ring with varying linewidth from 120nm to 370nm were connected in series on five corners. The magnetization reversal processes were investigated by the measurement of anisotropic magnetoresistances (AMR). The number of switching jumps in the AMR loops, from zero to five, varied with the longitudinal applied field. These discrete jumps result from domain wall nucleating and depinning on the corners. The larger external field applied the fewer number of jumps in the MR curve. This reproducible and particular-respondence of domain wall device in pattern of half-ring wire might be the new promising magnetoelectronic devices.
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
