Preprint Article Version 1 This version is not peer-reviewed

The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields

Version 1 : Received: 8 February 2019 / Approved: 11 February 2019 / Online: 11 February 2019 (16:15:49 CET)

How to cite: Huang, H.; Huang, P.; Wang, M.; Chen, S.; Wang, S.; Chou, C.; Huang, L.; Wang, W. The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields. Preprints 2019, 2019020093 (doi: 10.20944/preprints201902.0093.v1). Huang, H.; Huang, P.; Wang, M.; Chen, S.; Wang, S.; Chou, C.; Huang, L.; Wang, W. The Mixed Current Model of Nano-MOSFETs Considering the Effect of Horizontal and Vertical Electric Fields. Preprints 2019, 2019020093 (doi: 10.20944/preprints201902.0093.v1).

Abstract

A novel drive current model covering the effects of source/drain voltage (VDS) and gate voltage (VGS) and incorporating drift and diffusion current on the surface channel at the nano-node level, especially beyond 28nm node is presented. The effect of the diffusion current added is more satisfactory to describe the behavior of the drive current in nano-node MOSFETs, fabricated with the atomic-layer-deposition (ALD) technology. This breakthrough in model establishment can expose the long and short channel devices together. Introducing the variables of VDS and VGS, the mixed current model more effectively and meaningfully demonstrates the drive current of MOSFETs under the operation of horizontal, vertical, or mixed electrical field. In comparison between the simulation and experimental consequences, the electrical performance is impressive. The error between both is less than 1%, better than the empirical adjustment to issue a set of drive current models.

Subject Areas

drift current; diffusion current; mobility; nano-node; model; ALD technology

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