Effect of Gallium Incorporation on the Properties of ZnO Thin Films

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.