Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors2018, 18, 3755.
Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors 2018, 18, 3755.
Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors2018, 18, 3755.
Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors 2018, 18, 3755.
Abstract
This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.
Copyright:
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