Preprint Article Version 1 This version is not peer-reviewed

Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions

Version 1 : Received: 28 September 2018 / Approved: 28 September 2018 / Online: 28 September 2018 (16:14:09 CEST)

A peer-reviewed article of this Preprint also exists.

Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors 2018, 18, 3755. Gioffré, M.; Coppola, G.; Iodice, M.; Casalino, M. Integrable Near-Infrared Photodetectors Based on Hybrid Erbium/Silicon Junctions. Sensors 2018, 18, 3755.

Journal reference: Sensors 2018, 18, 3755
DOI: 10.3390/s18113755

Abstract

This paper presents the design, fabrication and characterization of Schottky erbium/silicon photodetectors working at 1.55 µm. These erbium/silicon junctions are carefully characterized using both electric and optical measurements at room temperature. A Schottky barrier ΦB of ~673 meV is extrapolated; the photodetectors show external responsivity of 0.55 mA/W at room temperature under a 8 V of reverse bias applied. In addition, the device performance is discussed in terms of normalized noise and noise equivalent power. To the best of our knowledge, these are the first Er/Si photodetectors designed for operation in free space at 1.55 µm. The proposed devices will pave the way towards development of Er-based photodetectors and light sources to be monolithically integrated in the same silicon substrate and both operating at 1.55 µm.

Subject Areas

silicon; near-infrared; photodetectors, internal photoemission; erbium.

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