Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry2018, 10, 320.
Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry 2018, 10, 320.
Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry2018, 10, 320.
Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry 2018, 10, 320.
Abstract
The application of graph theory in chemical and molecular structure research far exceeds people's expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonded by edges. Closed forms of multiplicative degree-based topological indices which are numerical parameters of the structure and determine physico-chemical properties of the concerned molecular compound. In this article, we compute and analyze many multiplicative degree-based topological indices of silicon-carbon Si2C3-I[p,q] and Si2C3-II[p,q].
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