Preprint Article Version 1 This version is not peer-reviewed

On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]

Version 1 : Received: 4 June 2018 / Approved: 5 June 2018 / Online: 5 June 2018 (12:44:44 CEST)

A peer-reviewed article of this Preprint also exists.

Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry 2018, 10, 320. Kwun, Y.C.; Virk, A.R.; Nazeer, W.; Rehman, M.A.; Kang, S.M. On the Multiplicative Degree-Based Topological Indices of Silicon-Carbon Si2C3-I[p,q] and Si2C3-II[p,q]. Symmetry 2018, 10, 320.

Journal reference: Symmetry 2018, 10, 320
DOI: 10.3390/sym10080320

Abstract

The application of graph theory in chemical and molecular structure research far exceeds people's expectations, and it has recently grown exponentially. In the molecular graph, atoms are represented by vertices and bonded by edges. Closed forms of multiplicative degree-based topological indices which are numerical parameters of the structure and determine physico-chemical properties of the concerned molecular compound. In this article, we compute and analyze many multiplicative degree-based topological indices of silicon-carbon Si2C3-I[p,q] and Si2C3-II[p,q].

Subject Areas

molecular graph; degree-based index; silicon-carbon

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