Hu, J.; Zhang, Y.; Sun, W.; Zhang, T. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Crystals 2017, 8, 9, doi:10.3390/cryst8010009.
Hu, J.; Zhang, Y.; Sun, W.; Zhang, T. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Crystals 2017, 8, 9, doi:10.3390/cryst8010009.
Hu, J.; Zhang, Y.; Sun, W.; Zhang, T. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Crystals 2017, 8, 9, doi:10.3390/cryst8010009.
Hu, J.; Zhang, Y.; Sun, W.; Zhang, T. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Crystals 2017, 8, 9, doi:10.3390/cryst8010009.
Abstract
At room temperature, the indentation morphologies of crystalline copper with different grain size including nanocrystalline (NC), ultrafine-grained (UFG) and coarse-grained (CG) copper were studied by nanoindentation at the strain rate of 0.04/s without holding time at indentation depth of 2000 nm. As the grain size increasing, the height of the pile-up around the residual indentation increases and then has a slightly decrease in the CG Cu, While the area of the pile-up increases constantly. Our analysis has revealed that the dislocation motion and GB activities in the NC Cu, some cross- and multiple-slips dislocation insides the larger grain in the UFG Cu, and forest dislocations from the intragranular Frank-Read sources in the CG Cu, would directly induce these distinct pile-up effect.
Copyright:
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.