Preprint Article Version 1 This version not peer reviewed

Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size

Version 1 : Received: 3 October 2017 / Approved: 3 October 2017 / Online: 3 October 2017 (17:04:45 CEST)

How to cite: Hu, J.; Sun, W.; Zhang, T.; Zhang, Y. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Preprints 2017, 2017100019 (doi: 10.20944/preprints201710.0019.v1). Hu, J.; Sun, W.; Zhang, T.; Zhang, Y. Nanoindentation-Induced Pile-Up in the Residual Impression of Crystalline Cu with Different Grain Size. Preprints 2017, 2017100019 (doi: 10.20944/preprints201710.0019.v1).

Abstract

At room temperature, the indentation morphologies of crystalline copper with different grain size including nanocrystalline (NC), ultrafine-grained (UFG) and coarse-grained (CG) copper were studied by nanoindentation at the strain rate of 0.04/s without holding time at indentation depth of 2000 nm. As the grain size increasing, the height of the pile-up around the residual indentation increases and then has a slightly decrease in the CG Cu, While the area of the pile-up increases constantly. Our analysis has revealed that the dislocation motion and GB activities in the NC Cu, some cross- and multiple-slips dislocation insides the larger grain in the UFG Cu, and forest dislocations from the intragranular Frank-Read sources in the CG Cu, would directly induce these distinct pile-up effect.

Subject Areas

Nanoindentation; Pile-up effect; Grain size; Dislocation motion; Grain boundaries activities

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