A new class of nano-cube core-shell heterostructures containing Ag coating on the top of WO₃ was fabricated. Physical vapor deposition was used to produce WO₃ based nano-heterostructures. All kind of wet toxic chemical process was avoided to make the process simple and contaminant free. Sputtering of WO₃ and a subsequent thermal annealing process was done to create nano-cubes of WO₃. After that, sputtering of Ag was performed to form the Ag-WO₃ core-shell nano-heterostructures (CSNH). The CSNHs were characterized using field emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), X-ray diffraction analysis (XRD) and UV-vis spectroscopy. The morphologies, elemental analysis, interfaces, crystallinity, phases, and chemical compositions were analyzed. The bottom-up growth of WO₃ nanocubes was studied using different time periods at 900°C. Ag coating was also studied before and after annealing. Finally, an optical property (band gap) was also analyzed using Tauc plot derive from absorption spectra. The tailoring the band gap of WO₃ from ~2.9eV to ~ 2.45 eV was observed while Ag-WO₃ CSNH formed.

The properties of photonic quasicrystals ultimate rely on their inherent long-range order, a hallmark that can be quantified in many ways depending on the specific aspects to be studied. We use the Lempel-Ziv measure, a basic tool for information theoretic problems, to characterize the complexity of the specific structure under consideration. Using the generalized Fibonacci quasicrystals as our thread, we adress the relation between the optical response and the associated complexity.

Metal oxide based electrodes play a crucial role in various as a transparent conductive oxide (TCO). One of the metal oxides, nickel oxide is a promising electrical conductive material. Here, we display that incorporation of vanadium in NiO lattice significantly improve both electrical conductivity and hole extraction. Also, vanadium doped nickel oxide exhibits a lower crystalline size compared to pristine nickel oxide, which maintains the reduction of surface roughness. These results indicating that the vanadium is an excellent dopant for NiO.

This paper presents computational study of non-stoichiometric nickel oxide in a 32-cell NiO system to model and validate localized heating effects due to nanosecond laser irradiation. Variation in Bandgap of NiO is studied as a function of varying concentrations of native defects ranging from 0 to 25%. It is observed that there is a slight increase in the bandgap from 3.8 eV for stiochiometric NiO to 3.86 eV for Ni-rich NiO and to 3.95 eV for O-rich NiO. It is hence deduced that the experimental laser irradiation leads to simultaneous reduction of Ni²⁺ ions and oxidation of NiO as the number of laser pulses increase. As well, a detailed study on the effects of doping nickel family elements, i.e. palladium (Pd) and platinum (Pt) in stoichiometric NiO is presented. A bandgap decrease from 3.8 eV for pure NiO to 2.5 eV for Pd-doping and 2 eV for Pt-doping for varying doping concentrations ranging from 0–25% Pd, Pt respectively is observed.

In this work, the optoelectronic characteristics of kesterites of the Cu₂NiXS₄ system (X = Si, Ge, Sn) were studied. The electronic properties of the Cu₂NiXS₄ (X = Si, Ge, Sn) system were studied using first-principles calculations within the framework of density functional theory. For calculations, ab initio codes VASP and Wien2k were used. The high-precision modified Beke-Jones (mBJ) functional and the hybrid HSE06 functional were used to estimate the bandgap, electronic and optical properties. Calculations have shown that when replacing Si with Ge and Sn, the band gap decreases from 2.58 eV to 1.33 eV. Replacing Si with Ge and Sn reduces the overall density of electronic states. In addition, new deep (shallow) states are formed in the band gap of these crystals, which is confirmed by the behavior of their optical properties. The obtained band gap values are compared with existing experimental measurements, demonstrating good agreement between HSE06 calculations and experimental data. The nature of changes in the dielectric constant, absorption capacity and optical conductivity of these systems depending on the photon energy has also been studied. The statistical dielectric constant and refractive index of these materials were found. The results will help increase the amount of information about the properties of the materials under study and will allow the use of these compounds in a wider range of optoelectronic devices, in particular, in solar cells and other devices that use solar radiation to generate electric current.

Topological states of matter have attracted significant attention due to their intrinsic wave-guiding and localization capabilities robust against disorders and defects in electronic, photonic, and phononic systems. Despite the above topological features phononic crystals share with their electronic and photonic counterparts, finite-frequency topological states in phononic crystals may not always survive. In this work, we discuss the survivability of topological states in Su-Schrieffer-Heeger models with both local and non-local interactions with larger symmetry perturbation. Although such a discussion is still about ideal mass-spring models, the insights from this study set the expectations in continuum phononic crystals, which can further instruct the applications of phononic crystals for practical purposes.

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor promising a wide range of important applications. However, mass production of high-quality crystalline Ga2O3 still suffers from limitations associated with poor reproducibility and low efficiency. Low-temperature grown amorphous Ga2O3 demonstrates comparable performance with its crystalline counterparts. Lanthanide Er3+-doped Ga2O3 (Ga2O3: Er) possesses great potential for developing light-emitting devices, photodetectors and optical waveguides. The host circumstance can exert a crystal field around the lanthanide dopants and strongly influence their photoluminescence properties. Here we present a systematical study of the impact of amorphous-to-crystalline transition on the upconversion photoluminescence in Ga2O3: Er thin films. Through controlling the growth temperature of Ga2O3: Er films, the upconversion luminescence of as-grown thin films are strongly enhanced over 100 times. Moreover, the variation of photoluminescence reflects the amorphous-to-crystalline transformation of the Ga2O3: Er thin films. These results will aid further design of favorable optoelectronic devices integrated with lanthanide-doped Ga2O3 thin films.

We investigate the performance of a novel flat photovoltaic-thermal (PV-T) module under high-vacuum through a 1D numerical model based on steady-state energy balance, with the aims of optimizing the simultaneous production of thermal and electrical energy. In the proposed design, the photovoltaic (PV) cell is positioned directly above the selective solar absorber (SSA), in a multilayer or fully integrated PV-SSA structure, which allows full exploitation of spectral solar radiation. In fact, in this configuration the losses related to non-absorption of low-energy photons and thermalization, typical of a classical single-junction PV cell, are reduced. The present study is conducted as the emittance and energy bandgap of the PV layer varied, thus admitting a wide variety of materials into the analysis. The dependence of the temperature coefficient, β(%/K), on the energy bandgap of the PV cell is also included. In the last part of the work, we discuss the performance of the proposed evacuated PV-T equipped with a SSA layer and thin film solar cells, namely those made of CdTe, CdS and GaAs. Overall, the paper highlights the great advantage of using high vacuum insulation, which suppresses conductive losses, and the versatility of the proposed system, which could be adapted to the user's needs simply by choosing the appropriate material for the photovoltaic layer.

This study introduces a novel nanocomposite coating composed of PANI/CeO2 nanocomposite films, aimed at addressing corrosion protection needs. Analysis through FTIR spectra and XRD patterns confirms the successful formation of the nanocomposite films. Notably, the PANI/CeO2 nanocomposite films exhibit a hydrophilic nature. The bandgap energy of the PANI composite film measures at 3.74 eV, while the introduction of CeO2 NPs into the PANI matrix reduces the bandgap energy to 3.67 eV. Furthermore, the electrical conductivity of the PANI composite film is observed to be 0.40 S.cm-1, with the incorporation of CeO2 NPs leading to an increase in electrical conductivity to 1.07 S.cm-1. To evaluate its efficacy, electrochemical measurements were conducted to assess the corrosion protection performance. Results indicate a high protection efficiency of 92.25% for the PANI/CeO2 nanocomposite film.

In the context of high-temperature water vapor treatment, Zn-Mg-Al alloy-coated steel sheets exhibit the emergence of a black surface. This study aims to explore the factors and mechanisms contributing to surface blackening by inducing black surfaces on Zn-Mg-Al alloy-coated steel sheets, which were fabricated through molten coating subjected to water vapor treatment at 150 degrees Celsius. The surfaced composition was predominantly identified as ZnO, a zinc oxide film, validated through X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Morphological analysis of the surface and cross-section post-water vapor treatment revealed a disrupted lamellar structure with diffused features, resulting in the formation of an oxide film. Optical properties analysis demonstrated an increased absorbance and a decreased bandgap energy after water vapor treatment, indicative of an augmented blackening effect. Consequently, the high-temperature water vapor treatment led to the formation of oxides on the surface, with the highly reactive Mg and Al extracting oxygen from the predominantly present ZnO surface. This process resulted in the creation of an oxygen-deficient oxide, ultimately causing surface blackening.

Wide bandgap semiconductors-based photocatalysts are usually limited by their low solar energy conversion efficiency due to their limited absorption solar wavelength, surface’s fast recombination of photoelectron–hole pairs and low charge-carrier mobility. Here we report a new stepwise solution synthesis for making a new photocatalytic core/shell of titanate nanowire/reduced graphene oxide shell (or titanate/rGO) 1D-nanocomposite. The new core/shell nanocomposite maximized the specific surface area, largely reduced the charge transfer resistance and reaction energy barrier, and significantly improved the absorption of the visible light. The core/shell nanocomposites’ large on/off current ratio and rapid photo-responses boosted the photocurrent by 30.0%, the photocatalysis rate by 50.0%, and the specific surface area by 16.4%, when comparing with the pure titanate nanowire core. Our numerical simulations support the effective charge separation on the new core-shell nanostructure, which can help further advance the new photocatalysis.

Organic solar cells are contributing extensively to the production of future large area and cost-effective sources of renewable energy with a compact environmental impact. Moreover, due to tunable optical properties of the active medium, the semi-transparent organic solar cell can be fabricated and become a promising nominee for building Integrated Photovoltaics (BIPV), vehicles, and mobile electronic devices. Therefore, three newly synthesized polymers used as were host materials for the active medium and blended with beetroot dye. Hence, based on BHJ structure two ternary systems have been constructed and utilized to fabricate semitransparent solar cells and characterized. The results show that the natural dye has a crucial impact on solar cell characteristic parameters. Consequently, large value of V_OC close to 1V were obtained for ternary systems and acceptor material named PINDOLE exhibits potentials for electron transport layer (ETL) and shows an improvement in both fill factor and device efficiency.