β-dicalcium silicate (β-Ca₂SiO₄, or β-C₂S in cement chemistry notation) is one of the most important minerals in cement. An improvement of its hydration rate would be the key point for developing environmentally friendly cements with lower energy consumption and CO₂ emissions. However, there is a lack of fundamental understanding on the water/β-C₂S surface interactions. In this work we aim to evaluate the water adsorption on three β-C₂S surfaces at the atomic scale using density functional theory (DFT) calculations. Our results indicate that thermodynamically favorable water adsorption takes place in several surface sites, with a broad range of adsorption energies (−0.78 to −1.48 eV), depending on the particular mineral surface and adsorption site. To clarify the key factor governing the adsorption, the electronic properties of water at the surface were analyzed. The partial density of states (DOS), charge analysis, and electron density difference analyses suggest a dual interaction of water with β-C₂S (100) surface: a nucleophilic interaction of the water oxygen lone pair with surface calcium atoms, and an electrophilic interaction (hydrogen bond) of one water hydrogen with surface oxygen atoms. Despite the elucidation of the adsorption mechanism, no correlation was found between the electronic structure and the adsorption energies.

The production of plants and crops is influenced by environmental stress, which is a serious scientific issue. Cotton is an essential crop for producing natural fibers that are used to make biofuel and edible oils. Salinity is the main element that influences cotton growth during the beginning of germination. The type of salt and the growth stage affects how sensitive a plant is to salt stress. Developing ways to enhance cotton performance in salty circumstances can be aided by an understanding of the response of cotton to salt, its mechanism of resistance, and its management methods. Osmotic and ionic imbalances originate due to the deposition of soluble salts under salinity stress in the plant's root zone. Soil salinity significantly reduces plant growth due to several factors, such as nutritional ion imbalance, which reduces K+, PO4-, and NO- absorption, excessive salt chloride concentrations, and osmotic stress, which hinders water availability. Research has revealed that compared to subsequent stages, the germination, emergence, and seedling phases are more vulnerable to salinity stress, which ultimately affects the seed cotton yield by delaying blooming, reducing fruiting positions, shedding fewer fruits, and reducing boll weight. The morphology, growth of cotton roots, shoots, yield, and fiber quality are all strongly impacted by salinity stress. It slows down plant feeding, cellular metabolism, and photosynthesis. The soil, water, and climate all affect how the plant responds to salinity stress. During salt stress, excessive exclusion of sodium or its compartmentalization is the key adaptation process in cotton. A major adaptive potential to create cotton types that can withstand salt is provided by the up-regulation of both physicochemical and non-enzymatic antioxidant genes. A successful strategy to increase cotton germination in saline soils is seed priming. Moreover, the transgenic strategy might be a viable choice for improving cotton yield in saline environments. Our review focuses on the impacts of salinity on cotton productivity as well as how plants react to salt stress. It also clarifies recent genetic advancements and molecular breeding for cotton's resistance to soil salt. To create salt-tolerant cultivars, a combination of traditional breeding and novel molecular approaches will be useful.

Advanced lithography requires highly sensitive photoresists to improve lithographic efficiency, and it is critical yet challenging to develop high-sensitivity photoresists and imaging strategies. Here, we report a novel strategy for ultra-high sensitivity using hexafluoroisopropanol (HFIP)-containing fluoropolymer photoresists. The incorporation of HFIP, with its strong electrophilic property and electron-withdrawing effect of the fluorine atoms, significantly increases the acidity of the photoresist after exposure, enabling imaging without conventional photoacid generators (PAGs). The HFIP-containing photoresist has been evaluated by electron beam lithography to achieve a trench of ~40 nm at an extremely low dose of 3 μC/cm2, which shows sensitivity enhancement by ~10 times to the commercial PAGs involved system, revealing its high-sensitivity and high-resolution features. Our results demonstrate a new type of PAGs and a novel approach to higher-performance imaging beyond conventional photoresist performance tuning.