The authors of the article performed computer simulation of buffer amplifiers (BA), which have medium and extremely small values of the offset voltage's systematic component (V_off), for different technological processes (Si, GaAs and GaN). The proposed control units are distinguished by a small number of elements and allow operation in the range of low and high temperatures. The variants of circuitry implementation of control units based on GaAs, GaN depletion-mode CMOS and JFET technological processes are considered. The results of the comparative modeling showed that the basic circuit of the BA on two field-effect transistors, when implemented on various modifications of GaN MOS and depletion-mode MOS transistors, provides sufficiently low values of the offset voltage's systematic component (less than 2 μV). The proposed BAs are designed for use in the structure of the Sallen-Key low-pass filter (LPF) when they are implemented both on mid-frequency Si CJFET and on GaAs microwave transistors. Low values of the LPF V_off have a positive effect on the effective capacity of the ADC. An example of switching on a BA in the JFET OpAmp structure based on the depletion-mode MOS input stage and a “folded” cascode, which, with 100% negative feedback, can be used in the Sallen-Key LPF, is considered. Computer simulation of the JFET/MOS OpAmp showed that the OpAmp has an open-loop voltage gain of 76-85dB, and its V_off is within 7µV in the temperature range from -60°C to +120°C. The presented circuitry of buffer amplifiers is intended, first of all, for the tasks of designing precision Sallen-Key low-pass filter (low-pass filter, high-pass filter, PF, RF).

The article shows that active RC- and RLC- filters based on the simplest wideband SiGe transistor stages are quite promising for RF and microwave frequency ranges. The results of computer simulation of the RC- and RLC-filters proposed by the authors of this article, which are oriented for use in communication and telecommunications devices, incl. with tunable and adaptive parameters.