The total ionizing dose (TID) effect significantly impacts the electrical parameters of fully depleted silicon on insulator (FDSOI) devices and even invalidates the on-off function of devices. At present, most of the irradiation research on the circuit level is focused on the single event effect, and the research on the total ionizing dose effect is very little. Therefore, this study mainly analyzes the influence of TID effects on a CMOS inverter circuit based on 22 nm FDSOI transistors. First, we constructed and calibrated an N-type FDSOI metal-oxide semiconductor (NMOS) structure and P-type FDSOI metal-oxide semiconductor (PMOS) structure. The transfer characteristics and trapped charge distribution of these devices were studied under different irradiation doses. Next, we studied the TID effect on an inverter circuit composed of these two MOS transistors. The simulation results show that when the radiation dose is 400 krad (Si), the logic threshold drift of the inverter is approximately 0.052 V. These results help further investigate the impact on integrated circuits in the irradiation environment.

In this paper, a low-power Injection-Locked Clock and Data Recovery (ILCDR) using 28nm FDSOI technology is presented. The back-gate auto-biasing of UTBB-FDSOI transistors allows us to create a QRO (Quadrature Ring Oscillator) reducing both size and power consumption. By injecting a digital signal into this circuit, we realize an Injection-Locked Oscillator (ILO) with low jitter. Thanks to the good performance of this oscillator, we propose a low power ILCDR with fast locking time and low jitter for burst-mode applications. The main novelty consists in the implementation of a complementary QRO based on back-gate control using FDSOI technology to realize a simple and efficient ILCDR circuit. With a Pseudo-Random Binary Sequence (PRBS7) at 868Mbps, the recovered clock jitter is 26.7ps (2.3%UIp-p) and the recovered data jitter is 11.9ps (1%UIp-p). With a 0.6V power supply, the power consumption is 318μW. The estimated Chip area is around 6600μm².