On Technological Aspects in the Development of Perovskite Gamma Radiation Detectors

This paper outlines the protocols, methods and technological steps used to manufacture perovskite semiconductor radiation detectors and compares them with those used in the manufacture of = more traditional semiconductor materials, such as Si, HPGe, CdZnTe, CdTe and TlBr. We analyze the problems and limitations arising when implementing these technologies at this early stage of perovskite detector development. We examine and critique the methods used in crystal growth and processing. Applying revised processes to CsPbBr₃ crystals with dimensions 5×5×3 mm³, we have manufactured a number of radiation detectors with different contact architectures – a planar contact structure, a planar structure with a guard ring and a ring-electrode type structure. In terms of energy resolution, the ring-drift detectors gave the best energy resolu-tion, followed by the planar with guard ring and the simple planar. Specifically, the ring-drift detectors provided FWHM energy resolutions of less than 1% at 662 and 1332 keV (0.79% and 0.86%, respectively) with a peak to Compton ratio of 11. The FWHM energy resolutions at 59.5 keV, 122 keV and 5.9 keV were 2.7 keV (4.5%), 3.4 keV (2.8 %) and ≤2.6 keV, respectively.