Submitted:
23 February 2026
Posted:
26 February 2026
You are already at the latest version
Abstract
Keywords:
1. Introduction
2. Materials and Methods
2.1. Applied Technology for VN Films Deposition
- Cathode cleaning- This is a high-energy ion bombardment process in which the substrates surface was sputter- etched by Ar+ plasma for 10 min at a substrate bias of 900 V to remove oxide films from their surface, as well as reduction of roughness which leads to deterioration of the as-deposited coating properties. This process was carried out at the following technological conditions:
- Working pressure PAr = 8 Pa;
- Discharge voltage U = 900 V;
- Discharge current I = 0.1 A;
- Temperature T = 232 ◦C;
- Cleaning time t = 10 min.
- 2.
- Deposition of intermediate TiN layer – The deposition of TiN sublayer was utilized to enhance adhesion between the initial material and the film at the following technological parameters:
- Working pressure PAr = 1.2 × 10−1Pa;
- Discharge voltage U = 450 V;
- Discharge current I = 1 A;
- Temperature T = 350 ◦C;
- Deposition time t = 10 min.
- 3.
- Deposition process of VN coatings — This process was taken place in an Ar/N2 atmosphere and with a substrate temperature of 350 oC.
- Argon pressure PAr = 2.4 × 10−2 Pa;
- Reactive and inert gas PN2/PAr ratio - 2.3;
- Working pressure – 7.9 × 10-2 Pa;
- Discharge voltage U = 575 V;
- Discharge current- 1 A;
- Substrate temperatures—VN coatings were produced at a bias voltage of 0 V, -50 V, - 100 V, -150 V and -200 V;
- Deposition time t = 90 min.
2.2. XRD Analysis
2.3. FTIR Spectroscopy
2.4. SEM Analysis
2.5. AFM Measurements
2.6. Mechanical Properties
2.7. Friction Coefficient
2.8. Corrosion Behavior
3. Results and Discussion
3.1. XRD Analysis
3.2. Fourier-Transform Infrared (FTIR) Spectroscopy
3.3. SEM Analysis
3.4. AFM Analysis
3.5. Mechanical Properties
3.6. Friction Coefficient
3.7. Corrosion Resistance
4. Conclusion
Author Contributions
Funding
Acknowledgments
Conflicts of Interest
References
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| VN samples | Hardness, GPa | Elastic modulus, GPa | H/E ratio | H3/E2 ratio |
|---|---|---|---|---|
| 0 V | 24.00 ± 4.03 | 236.02 ± 27.86 | 0.101 | 0.248 |
| - 50 V | 34.50 ± 5.03 | 316.45 ± 35.66 | 0.107 | 0.001 |
| - 100 V | 36.20 ± 5.60 | 317.73 ± 32.86 | 0.114 | 0.478 |
| - 150 V | 30.83 ± 4.89 | 302.38 ± 44.75 | 0.102 | 0.321 |
| - 200 V | 6.7 ± 0.64 | 207.36 ± 23.09 | 0.032 | 0.007 |
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