Submitted:
22 December 2025
Posted:
23 December 2025
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Abstract
Keywords:
1. Introduction
2. Defining Dosimetric Challenges in FLASH-RT
- Average dose rate: total dose divided by irradiation time, expressed in Gy/s over the full beam-on period.
- Instantaneous dose rate: dose per pulse divided by pulse duration, which can exceed Gy/s in electron beams.
- Pulse-averaged dose rate: mean dose per pulse averaged over the repetition period, relevant for pulsed beams.
- Dose-averaged dose rate (DADR): definitions used in proton pencil-beam scanning to capture heterogeneity in delivery.
2.1. Electron and Photon Beam Microstructure
2.2. Proton Beam Microstructure
- Synchrotrons: The beam extraction from a synchrotron occurs in long macro-pulses referred to as spills. These spills typically last between to 2 seconds. Within each long spill, there is a fine temporal substructure, which consists of 10– bunches separated by approximately due to the Radiofrequency (RF) cavity bucket dynamics.
- Cyclotrons (specifically, Isochronous Cyclotrons): These accelerators produce beams that are often described as quasi-continuous. The beam is inherently bunched at the accelerator’s RF frequencies, which are typically in the tens of MHz range (High Freq), resulting in nanosecond (ns) pulses separated by approximately . Resolving this fine temporal structure requires the high-bandwidth capabilities of Solid-State Detectors (SSDs) like LGADs [14].

2.2.1. Maximum Dose Rate in Counting Mode
- A large sensor, such as the detector (relevant for SiC diodes), hits the limit at a very low rate of .
- Conversely, the smallest pixel sensor, (, typical for pixel detectors), can theoretically handle rates up to (or ) while still operating within the counting limit.
2.3. Temporal Resolution and the FLASH Debate
3. Solid-State Detectors (SSDs) and Their Principles
3.1. Standard Silicon Diodes vs. Silicon Carbide (SiC)
- Wide Bandgap Advantage: SiC has a wider bandgap (3.2 eV vs. 1.12 eV for Si) [10]. This physical property results in significantly lower leakage currents. Furthermore, SiC exhibits greater radiation hardness, maintaining stability after cumulative doses that would degrade standard silicon performance [11,12].
- Linearity and Saturation: A key limitation of standard silicon diodes at FLASH dose rates is saturation due to the space-charge effect (where high charge density shields the electric field). SiC detectors demonstrate exceptional linearity up to much higher dose-per-pulse (DPP) values (e.g., 11 Gy/pulse) and instantaneous dose rates (up to 4 MGy/s) compared to standard Si diodes [11].
- Thermal Stability: SiC offers superior thermal stability, which is advantageous for detectors placed close to high-power FLASH beam exits [11].
3.2. Low Gain Avalanche Detectors (LGADs)
- The Saturation Challenge: In a counting mode at low flux (e.g., < 10 Gy/s), the internal gain of an LGAD is highly beneficial for resolving single particles. However, at FLASH dose rates ( Gy/s), the particle flux is too high for counting. The simultaneous arrival of thousands of particles generates a massive charge cloud that can instantaneously saturate the gain layer and the readout electronics.
- Operating as a "Fast Diode": To utilize LGADs in UHDR environments, they can be operated in current-integrating mode, similar to a standard diode. Furthermore, they are often operated at lower bias voltages. Reducing the bias suppresses the avalanche gain mechanism, effectively turning the LGAD into a standard, albeit very thin (50 m), silicon diode.
- Advantages in FLASH: Even without the gain, LGADs remain valuable because of their thin active volume and fast charge collection times (tens of picoseconds). This allows them to measure the temporal structure of the beam (e.g., pulse width and shape) with high fidelity, provided the gain is managed to prevent saturation [13,14].
3.3. Miniaturized Pixel Detectors (Timepix)
- Counting vs. Integrating: Timepix is typically designed for counting mode (low flux). At FLASH rates, the pile-up is instantaneous. To be useful, these detectors must utilize Time-over-Threshold (ToT) or integrating modes to handle the high flux [15].
- Application: Their primary value in FLASH lies in high-resolution, two-dimensional mapping of beam profiles and, when counting is possible (in beam tails), for particle track recognition and LET determination [16].
3.4. Review of Experimental Results
4. Operational Modes and Electronic Readout
4.1. High-Flux Integrating Mode
- Principle: The detector operates in an integrating mode. The total charge generated by the pulse is collected and measured.
- LGAD Specifics: For LGADs, this means the "counting" capability is abandoned. The device is treated as a current source. If the bias voltage is high (nominal gain mode), the current spike can be large enough to damage readout electronics or induce non-linear space-charge effects. Therefore, operating at reduced bias (low gain) is often necessary to maintain linearity.
- SiC Specifics: SiC diodes are naturally suited for this mode due to their wide bandgap and resistance to saturation effects, as discussed in Section 3.1.
4.2. Low-Flux Counting Mode
- Beam Setup/Diagnostics: Characterizing the beam at very low currents before switching to FLASH parameters.
- Beam Tails: Measuring scatter or penumbra regions where the flux is sufficiently low ( Gy/s).
- Single Particle Timing: Using LGADs in their high-gain mode to characterize the RF-structure of the beam, but only under conditions where the total flux is heavily attenuated (e.g. single electron mode).
5. Emerging Concepts and Future Directions
5.1. SSD Radiation Hardness Strategies
- Material Selection: Utilizing wide-bandgap materials like SiC significantly increases intrinsic radiation tolerance compared to Si.
- Defect Engineering: For silicon devices (like LGADs), strategies include introducing impurities (carbon/oxygen) to trap lattice defects. However, SiC remains the superior candidate for longevity in high-dose clinical environments.
6. Discussion
6.1. Silicon (Si) vs. Silicon Carbide (SiC)
6.2. High-Flux Integrating Mode
6.3. The Role of LGADs: Specialized Timing, Not Counting
6.4. The Necessity of Nanosecond-Resolution
7. Conclusions
Acknowledgments
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